DESCRIPTION

The UTC 7N60Ais a high voltage N-Channel enhancement mode power field effect transistors and is designed to have minimize on-state resistance , provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. This power MOSFET is well suited for high efficiency switch mode power supply.

FEATURES

* RDS(ON)= 1.2Ω @VGS= 10 V

* Ultra low gate charge (typical 28 nC )

* Low reverse transfer Capacitance (CRSS= typical 12 pF ) * Fast switching capability

* Avalanche energy tested

* Improved dv/dt capability, high ruggedness