74VHC价格

参考价格:¥0.7605

型号:74VHC00M 品牌:FAIRCHILD 备注:这里有74VHC多少钱,2025年最近7天走势,今日出价,今日竞价,74VHC批发/采购报价,74VHC行情走势销售排行榜,74VHC报价。
型号 功能描述 生产厂家 企业 LOGO 操作

Quad 2-Input NAND Gate

General Description The VHC00 is an advanced high-speed CMOS 2-Input NAND Gate fabricated with silicon gate CMOS technology. It achieves the high-speed operation similar to equivalent Bipolar Schottky TTL while maintaining the CMOS low power dissipation. The internal circuit is composed of 3 stag

Fairchild

仙童半导体

Quad 2-Input NAND Gate

The MC74VHC00 is an advanced high speed CMOS 2−input NAND gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation. The internal circuit is composed of three stages, including a buffe

ONSEMI

安森美半导体

QUAD 2-INPUT NAND GATE

DESCRIPTION The 74VHC00 is an advanced high-speed CMOS QUAD 2-INPUT NAND GATE fabricated with sub-micron silicon gate and double-layer metal wiring C2MOS technology. The internal circuit is composed of 3 stages including buffer output, which provides high noise immunity and stable output. Power d

STMICROELECTRONICS

意法半导体

Quad 2?묲nput NAND Gate

The MC74VHC00 is an advanced high speed CMOS 2−input NAND gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation. The internal circuit is composed of three stages, including a buffe

ONSEMI

安森美半导体

CMOS Digital Integrated Circuits Silicon Monolithic

Functional Description • Quad 2-Input NAND Gate General The 74VHC00FT is an advanced high speed CMOS 2-INPUT NAND GATE fabricated with silicon gate C2MOS technology. It achieves the high speed operation similar to equivalent Bipolar Schottky TTL while maintaining the CMOS low power dissipa

TOSHIBA

东芝

QUAD 2-INPUT NAND GATE

DESCRIPTION The 74VHC00 is an advanced high-speed CMOS QUAD 2-INPUT NAND GATE fabricated with sub-micron silicon gate and double-layer metal wiring C2MOS technology. The internal circuit is composed of 3 stages including buffer output, which provides high noise immunity and stable output. Power d

STMICROELECTRONICS

意法半导体

Quad 2-Input NAND Gate

General Description The VHC00 is an advanced high-speed CMOS 2-Input NAND Gate fabricated with silicon gate CMOS technology. It achieves the high-speed operation similar to equivalent Bipolar Schottky TTL while maintaining the CMOS low power dissipation. The internal circuit is composed of 3 stag

Fairchild

仙童半导体

Quad 2-Input NAND Gate

The MC74VHC00 is an advanced high speed CMOS 2−input NAND gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation. The internal circuit is composed of three stages, including a buffe

ONSEMI

安森美半导体

Quad 2-Input NAND Gate

The MC74VHC00 is an advanced high speed CMOS 2−input NAND gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation. The internal circuit is composed of three stages, including a buffe

ONSEMI

安森美半导体

Quad 2-Input NAND Gate

General Description The VHC00 is an advanced high-speed CMOS 2-Input NAND Gate fabricated with silicon gate CMOS technology. It achieves the high-speed operation similar to equivalent Bipolar Schottky TTL while maintaining the CMOS low power dissipation. The internal circuit is composed of 3 stag

Fairchild

仙童半导体

Quad 2-Input NAND Gate

The MC74VHC00 is an advanced high speed CMOS 2−input NAND gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation. The internal circuit is composed of three stages, including a buffe

ONSEMI

安森美半导体

Quad 2-Input NAND Gate

General Description The VHC00 is an advanced high-speed CMOS 2-Input NAND Gate fabricated with silicon gate CMOS technology. It achieves the high-speed operation similar to equivalent Bipolar Schottky TTL while maintaining the CMOS low power dissipation. The internal circuit is composed of 3 stag

Fairchild

仙童半导体

Quad 2-Input NAND Gate

General Description The VHC00 is an advanced high-speed CMOS 2-Input NAND Gate fabricated with silicon gate CMOS technology. It achieves the high-speed operation similar to equivalent Bipolar Schottky TTL while maintaining the CMOS low power dissipation. The internal circuit is composed of 3 stag

Fairchild

仙童半导体

QUAD 2-INPUT NAND GATE

DESCRIPTION The 74VHC00 is an advanced high-speed CMOS QUAD 2-INPUT NAND GATE fabricated with sub-micron silicon gate and double-layer metal wiring C2MOS technology. The internal circuit is composed of 3 stages including buffer output, which provides high noise immunity and stable output. Power d

STMICROELECTRONICS

意法半导体

Quad 2-Input NAND Gate

General Description The VHC00 is an advanced high-speed CMOS 2-Input NAND Gate fabricated with silicon gate CMOS technology. It achieves the high-speed operation similar to equivalent Bipolar Schottky TTL while maintaining the CMOS low power dissipation. The internal circuit is composed of 3 stag

Fairchild

仙童半导体

Quad 2-Input NAND Gate

General Description The VHC00 is an advanced high-speed CMOS 2-Input NAND Gate fabricated with silicon gate CMOS technology. It achieves the high-speed operation similar to equivalent Bipolar Schottky TTL while maintaining the CMOS low power dissipation. The internal circuit is composed of 3 stag

Fairchild

仙童半导体

Quad 2-Input NAND Gate

General Description The VHC00 is an advanced high-speed CMOS 2-Input NAND Gate fabricated with silicon gate CMOS technology. It achieves the high-speed operation similar to equivalent Bipolar Schottky TTL while maintaining the CMOS low power dissipation. The internal circuit is composed of 3 stag

Fairchild

仙童半导体

Quad 2-Input NAND Gate

The MC74VHC00 is an advanced high speed CMOS 2−input NAND gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation. The internal circuit is composed of three stages, including a buffe

ONSEMI

安森美半导体

Quad 2-Input NAND Gate

General Description The VHC00 is an advanced high-speed CMOS 2-Input NAND Gate fabricated with silicon gate CMOS technology. It achieves the high-speed operation similar to equivalent Bipolar Schottky TTL while maintaining the CMOS low power dissipation. The internal circuit is composed of 3 stag

Fairchild

仙童半导体

Quad 2-Input NAND Gate

General Description The VHC00 is an advanced high-speed CMOS 2-Input NAND Gate fabricated with silicon gate CMOS technology. It achieves the high-speed operation similar to equivalent Bipolar Schottky TTL while maintaining the CMOS low power dissipation. The internal circuit is composed of 3 stag

Fairchild

仙童半导体

Quad 2-Input NAND Gate

The MC74VHC00 is an advanced high speed CMOS 2−input NAND gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation. The internal circuit is composed of three stages, including a buffe

ONSEMI

安森美半导体

Quad 2-Input NAND Gate

General Description The VHC00 is an advanced high-speed CMOS 2-Input NAND Gate fabricated with silicon gate CMOS technology. It achieves the high-speed operation similar to equivalent Bipolar Schottky TTL while maintaining the CMOS low power dissipation. The internal circuit is composed of 3 stag

Fairchild

仙童半导体

QUAD 2-INPUT NAND GATE

DESCRIPTION The 74VHC00 is an advanced high-speed CMOS QUAD 2-INPUT NAND GATE fabricated with sub-micron silicon gate and double-layer metal wiring C2MOS technology. The internal circuit is composed of 3 stages including buffer output, which provides high noise immunity and stable output. Power d

STMICROELECTRONICS

意法半导体

QUAD 2-INPUT NAND GATE

DESCRIPTION The 74VHC00 is an advanced high-speed CMOS QUAD 2-INPUT NAND GATE fabricated with sub-micron silicon gate and double-layer metal wiring C2MOS technology. The internal circuit is composed of 3 stages including buffer output, which provides high noise immunity and stable output. Power d

STMICROELECTRONICS

意法半导体

QUAD 2-INPUT NOR GATE

DESCRIPTION The 74VHC02 is an advanced high-speed CMOS QUAD 2-INPUT NOR GATE fabricated with sub-micron silicon gate and double-layer metal wiring C2MOS technology. ■ HIGH SPEED: tPD = 3.6ns (TYP.) at VCC = 5V ■ LOW POWER DISSIPATION: ICC = 2 µA (MAX.) at TA=25°C ■ HIGH NOISE IMMUNITY: VNIH =

STMICROELECTRONICS

意法半导体

Quad 2-Input NOR Gate

General Description The VHC02 is an advanced high-speed CMOS 2-Input NOR Gate fabricated with silicon gate CMOS technology. It achieves the high-speed operation similar to equivalent Bipolar Schottky TTL while maintaining the CMOS low power dissipation. The internal circuit is composed of 3 stage

Fairchild

仙童半导体

Quad 2-input NOR gate

ETC

知名厂家

Quad 2-input NOR gate

1. General description The 74VHC02; 74VHCT02 are high-speed Si-gate CMOS devices and are pin compatible with Low-power Schottky TTL (LSTTL). They are specified in compliance with JEDEC standard No. 7-A. The 74VHC02; 74VHCT02 provide a quad 2-input NOR function. 2. Features and benefits • Bala

NEXPERIA

安世

Quad 2-input NOR gate

ETC

知名厂家

Quad 2-input NOR gate

1. General description The 74VHC02; 74VHCT02 are high-speed Si-gate CMOS devices and are pin compatible with Low-power Schottky TTL (LSTTL). They are specified in compliance with JEDEC standard No. 7-A. The 74VHC02; 74VHCT02 provide a quad 2-input NOR function. 2. Features and benefits • Bala

NEXPERIA

安世

Quad 2-input NOR gate

General description The 74VHC02-Q100; 74VHCT02-Q100 are high-speed Si-gate CMOS devices and are pin compatible with Low-power Schottky TTL (LSTTL). They are specified in compliance with JEDEC standard No. 7-A. The 74VHC02-Q100; 74VHCT02-Q100 provide a quad 2-input NOR function. This product has

NEXPERIA

安世

Quad 2-input NOR gate

1. General description The 74VHC02; 74VHCT02 are high-speed Si-gate CMOS devices and are pin compatible with Low-power Schottky TTL (LSTTL). They are specified in compliance with JEDEC standard No. 7-A. The 74VHC02; 74VHCT02 provide a quad 2-input NOR function. 2. Features and benefits • Bala

NEXPERIA

安世

Quad 2-input NOR gate

ETC

知名厂家

Quad 2-input NOR gate

General description The 74VHC02-Q100; 74VHCT02-Q100 are high-speed Si-gate CMOS devices and are pin compatible with Low-power Schottky TTL (LSTTL). They are specified in compliance with JEDEC standard No. 7-A. The 74VHC02-Q100; 74VHCT02-Q100 provide a quad 2-input NOR function. This product has

NEXPERIA

安世

CMOS Digital Integrated Circuits Silicon Monolithic

Functional Description • Quad 2-Input NOR Gate General The 74VHC02FT is an advanced high speed CMOS 2-INPUT NOR GATE fabricated with silicon gate C2MOS technology. It achieves the high speed operation similar to equivalent Bipolar Schottky TTL while maintaining the CMOS low power dissipatio

TOSHIBA

东芝

Quad 2-Input NOR Gate

General Description The VHC02 is an advanced high-speed CMOS 2-Input NOR Gate fabricated with silicon gate CMOS technology. It achieves the high-speed operation similar to equivalent Bipolar Schottky TTL while maintaining the CMOS low power dissipation. The internal circuit is composed of 3 stage

Fairchild

仙童半导体

QUAD 2-INPUT NOR GATE

DESCRIPTION The 74VHC02 is an advanced high-speed CMOS QUAD 2-INPUT NOR GATE fabricated with sub-micron silicon gate and double-layer metal wiring C2MOS technology. ■ HIGH SPEED: tPD = 3.6ns (TYP.) at VCC = 5V ■ LOW POWER DISSIPATION: ICC = 2 µA (MAX.) at TA=25°C ■ HIGH NOISE IMMUNITY: VNIH =

STMICROELECTRONICS

意法半导体

Quad 2-Input NOR Gate

General Description The VHC02 is an advanced high-speed CMOS 2-Input NOR Gate fabricated with silicon gate CMOS technology. It achieves the high-speed operation similar to equivalent Bipolar Schottky TTL while maintaining the CMOS low power dissipation. The internal circuit is composed of 3 stage

Fairchild

仙童半导体

QUAD 2-INPUT NOR GATE

DESCRIPTION The 74VHC02 is an advanced high-speed CMOS QUAD 2-INPUT NOR GATE fabricated with sub-micron silicon gate and double-layer metal wiring C2MOS technology. ■ HIGH SPEED: tPD = 3.6ns (TYP.) at VCC = 5V ■ LOW POWER DISSIPATION: ICC = 2 µA (MAX.) at TA=25°C ■ HIGH NOISE IMMUNITY: VNIH =

STMICROELECTRONICS

意法半导体

Quad 2-Input NOR Gate

General Description The VHC02 is an advanced high-speed CMOS 2-Input NOR Gate fabricated with silicon gate CMOS technology. It achieves the high-speed operation similar to equivalent Bipolar Schottky TTL while maintaining the CMOS low power dissipation. The internal circuit is composed of 3 stage

Fairchild

仙童半导体

Quad 2-input NOR gate

ETC

知名厂家

Quad 2-input NOR gate

1. General description The 74VHC02; 74VHCT02 are high-speed Si-gate CMOS devices and are pin compatible with Low-power Schottky TTL (LSTTL). They are specified in compliance with JEDEC standard No. 7-A. The 74VHC02; 74VHCT02 provide a quad 2-input NOR function. 2. Features and benefits • Bala

NEXPERIA

安世

Quad 2-input NOR gate

General description The 74VHC02-Q100; 74VHCT02-Q100 are high-speed Si-gate CMOS devices and are pin compatible with Low-power Schottky TTL (LSTTL). They are specified in compliance with JEDEC standard No. 7-A. The 74VHC02-Q100; 74VHCT02-Q100 provide a quad 2-input NOR function. This product has

NEXPERIA

安世

Quad 2-input NOR gate

General description The 74VHC02-Q100; 74VHCT02-Q100 are high-speed Si-gate CMOS devices and are pin compatible with Low-power Schottky TTL (LSTTL). They are specified in compliance with JEDEC standard No. 7-A. The 74VHC02-Q100; 74VHCT02-Q100 provide a quad 2-input NOR function. This product has

NEXPERIA

安世

Quad 2-Input NOR Gate

General Description The VHC02 is an advanced high-speed CMOS 2-Input NOR Gate fabricated with silicon gate CMOS technology. It achieves the high-speed operation similar to equivalent Bipolar Schottky TTL while maintaining the CMOS low power dissipation. The internal circuit is composed of 3 stage

Fairchild

仙童半导体

QUAD 2-INPUT NOR GATE

DESCRIPTION The 74VHC02 is an advanced high-speed CMOS QUAD 2-INPUT NOR GATE fabricated with sub-micron silicon gate and double-layer metal wiring C2MOS technology. ■ HIGH SPEED: tPD = 3.6ns (TYP.) at VCC = 5V ■ LOW POWER DISSIPATION: ICC = 2 µA (MAX.) at TA=25°C ■ HIGH NOISE IMMUNITY: VNIH =

STMICROELECTRONICS

意法半导体

QUAD 2-INPUT NOR GATE

DESCRIPTION The 74VHC02 is an advanced high-speed CMOS QUAD 2-INPUT NOR GATE fabricated with sub-micron silicon gate and double-layer metal wiring C2MOS technology. ■ HIGH SPEED: tPD = 3.6ns (TYP.) at VCC = 5V ■ LOW POWER DISSIPATION: ICC = 2 µA (MAX.) at TA=25°C ■ HIGH NOISE IMMUNITY: VNIH =

STMICROELECTRONICS

意法半导体

QUAD 2-INPUT OPEN DRAIN NAND GATE

DESCRIPTION The 74VHC03 is an advanced high-speed CMOS QUAD 2-INPUT OPEN DRAIN NAND GATE fabricated with sub-micron silicon gate and double-layer metal wiring C2MOS technology. ■ HIGH SPEED: tPD = 3.7ns (TYP.) at VCC = 5V ■ LOW POWER DISSIPATION: ICC = 2 µA (MAX.) at TA=25°C ■ HIGH NOISE IMMUN

STMICROELECTRONICS

意法半导体

CMOS Digital Integrated Circuits Silicon Monolithic

Functional Description • Quad 2-Input NAND Gate (Open Drain) General The 74VHC03FT is an advanced high speed CMOS 2-INPUT NAND GATE fabricated with silicon gate C2MOS technology. It achieves the high speed operation similar to equivalent Bipolar Schottky TTL while maintaining the CMOS low

TOSHIBA

东芝

QUAD 2-INPUT OPEN DRAIN NAND GATE

DESCRIPTION The 74VHC03 is an advanced high-speed CMOS QUAD 2-INPUT OPEN DRAIN NAND GATE fabricated with sub-micron silicon gate and double-layer metal wiring C2MOS technology. ■ HIGH SPEED: tPD = 3.7ns (TYP.) at VCC = 5V ■ LOW POWER DISSIPATION: ICC = 2 µA (MAX.) at TA=25°C ■ HIGH NOISE IMMUN

STMICROELECTRONICS

意法半导体

QUAD 2-INPUT OPEN DRAIN NAND GATE

DESCRIPTION The 74VHC03 is an advanced high-speed CMOS QUAD 2-INPUT OPEN DRAIN NAND GATE fabricated with sub-micron silicon gate and double-layer metal wiring C2MOS technology. ■ HIGH SPEED: tPD = 3.7ns (TYP.) at VCC = 5V ■ LOW POWER DISSIPATION: ICC = 2 µA (MAX.) at TA=25°C ■ HIGH NOISE IMMUN

STMICROELECTRONICS

意法半导体

HEX INVERTER

DESCRIPTION The 74VHC04 is an advanced high-speed CMOS HEX INVERTER fabricated with sub-micron silicon gate and double-layer metal wiring C2MOS technology. The internal circuit is composed of 3 stages including buffer output, which provides high noise immunity and stable output. ■ HIGH SPEED: t

STMICROELECTRONICS

意法半导体

CMOS Digital Integrated Circuits Silicon Monolithic

Functional Description • Hex Inverter General The 74VHC04FT is an advanced high speed CMOS INVERTER fabricated with silicon gate C2MOS technology. It achieves the high speed operation similar to equivalent Bipolar Schottky TTL while maintaining the CMOS low power dissipation. The internal

TOSHIBA

东芝

HEX INVERTER

DESCRIPTION The 74VHC04 is an advanced high-speed CMOS HEX INVERTER fabricated with sub-micron silicon gate and double-layer metal wiring C2MOS technology. The internal circuit is composed of 3 stages including buffer output, which provides high noise immunity and stable output. ■ HIGH SPEED: t

STMICROELECTRONICS

意法半导体

HEX INVERTER

DESCRIPTION The 74VHC04 is an advanced high-speed CMOS HEX INVERTER fabricated with sub-micron silicon gate and double-layer metal wiring C2MOS technology. The internal circuit is composed of 3 stages including buffer output, which provides high noise immunity and stable output. ■ HIGH SPEED: t

STMICROELECTRONICS

意法半导体

HEX INVERTER OPEN DRAIN

DESCRIPTION The 74VHC05 is an advanced high-speed CMOS OPEN DRAIN HEX INVERTER fabricated with sub-micron silicon gate and double-layer metal wiring C2MOS technology. ■ HIGH SPEED: tPD = 3.8ns (TYP.) at VCC = 5V ■ LOW POWER DISSIPATION: ICC = 2 µA (MAX.) at TA=25°C ■ HIGH NOISE IMMUN

STMICROELECTRONICS

意法半导体

CMOS Digital Integrated Circuits Silicon Monolithic

Functional Description • Hex Inverter (Open Drain) General The 74VHC05FT is an advanced high speed CMOS INVERTER fabricated with silicon gate C2MOS technology. It achieves the high speed operation similar to equivalent Bipolar Schottky TTL while maintaining the CMOS low power dissipation.

TOSHIBA

东芝

HEX INVERTER OPEN DRAIN

DESCRIPTION The 74VHC05 is an advanced high-speed CMOS OPEN DRAIN HEX INVERTER fabricated with sub-micron silicon gate and double-layer metal wiring C2MOS technology. ■ HIGH SPEED: tPD = 3.8ns (TYP.) at VCC = 5V ■ LOW POWER DISSIPATION: ICC = 2 µA (MAX.) at TA=25°C ■ HIGH NOISE IMMUN

STMICROELECTRONICS

意法半导体

HEX INVERTER OPEN DRAIN

DESCRIPTION The 74VHC05 is an advanced high-speed CMOS OPEN DRAIN HEX INVERTER fabricated with sub-micron silicon gate and double-layer metal wiring C2MOS technology. ■ HIGH SPEED: tPD = 3.8ns (TYP.) at VCC = 5V ■ LOW POWER DISSIPATION: ICC = 2 µA (MAX.) at TA=25°C ■ HIGH NOISE IMMUN

STMICROELECTRONICS

意法半导体

QUAD 2-INPUT AND GATE

DESCRIPTION The 74VHC08 is an advanced high-speed CMOS QUAD 2-INPUT AND GATE fabricated with sub-micron silicon gate and double-layer metal wiring C2MOS technology. The internal circuit is composed of 2 stages including buffer output, which provides high noise immunity and stable output. ■ HIGH

STMICROELECTRONICS

意法半导体

74VHC产品属性

  • 类型

    描述

  • 型号

    74VHC

  • 制造商

    FAIRCHILD

  • 制造商全称

    Fairchild Semiconductor

  • 功能描述

    Quad 2-Input NAND Gate

更新时间:2025-12-26 16:49:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
TOSHIBA/东芝
1728+
TSSOP14
4376
原装现货 价格优势
NS
2025+
SOP
5000
原装进口价格优 请找坤融电子!
FAIRCHILD
0336+
TSSOP
4900
全新原装绝对自己公司现货
FAIRCHILD
24+
TSSOP14
7850
只做原装正品现货或订货假一赔十!
FAI
24+
TSSOP14
4800
原装现货,可开13%税票
FAIRCHILD/仙童
25+
SSOP
154671
明嘉莱只做原装正品现货
TOS
25+
14-TSSOP
9500
百分百原装正品 真实公司现货库存 本公司只做原装 可
FAIRCHILD/仙童
SOP
23+
6000
专业配单原装正品假一罚十
TOSHIBA(东芝)
24+
N/A
12600
原装正品现货支持实单
FAIRCHILD
25+
TSSOP14
4500
原装正品!现货热卖!

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