QUAD 2-INPUT OPEN DRAIN NAND GATE

DESCRIPTION The 74VHC03 is an advanced high-speed CMOS QUAD 2-INPUT OPEN DRAIN NAND GATE fabricated with sub-micron silicon gate and double-layer metal wiring C2MOS technology. ■ HIGH SPEED: tPD = 3.7ns (TYP.) at VCC = 5V ■ LOW POWER DISSIPATION: ICC = 2 µA (MAX.) at TA=25°C ■ HIGH NOISE IMMUN

QUAD 2-INPUT OPEN DRAIN NAND GATE

QUAD 2-INPUT OPEN DRAIN NAND GATE

DESCRIPTION The 74VHC03 is an advanced high-speed CMOS QUAD 2-INPUT OPEN DRAIN NAND GATE fabricated with sub-micron silicon gate and double-layer metal wiring C2MOS technology. ■ HIGH SPEED: tPD = 3.7ns (TYP.) at VCC = 5V ■ LOW POWER DISSIPATION: ICC = 2 µA (MAX.) at TA=25°C ■ HIGH NOISE IMMUN

QUAD 2-INPUT OPEN DRAIN NAND GATE

文件：232.88 Kbytes Page：11 Pages

QUAD 2-INPUT OPEN DRAIN NAND GATE

文件：232.88 Kbytes Page：11 Pages

封装/外壳：14-TSSOP（0.173"，4.40mm 宽） 包装：卷带（TR） 描述：IC GATE NAND OD 4CH 2-IN 14TSSOP 集成电路（IC） 门和反相器

QUAD 2-INPUT OPEN DRAIN NAND GATE

CMOS Digital Integrated Circuits Silicon Monolithic

Functional Description • Quad 2-Input NAND Gate (Open Drain) General The 74VHC03FT is an advanced high speed CMOS 2-INPUT NAND GATE fabricated with silicon gate C2MOS technology. It achieves the high speed operation similar to equivalent Bipolar Schottky TTL while maintaining the CMOS low

QUAD 2-INPUT OPEN DRAIN NAND GATE

DESCRIPTION The 74VHC03 is an advanced high-speed CMOS QUAD 2-INPUT OPEN DRAIN NAND GATE fabricated with sub-micron silicon gate and double-layer metal wiring C2MOS technology. ■ HIGH SPEED: tPD = 3.7ns (TYP.) at VCC = 5V ■ LOW POWER DISSIPATION: ICC = 2 µA (MAX.) at TA=25°C ■ HIGH NOISE IMMUN

QUAD 2-INPUT OPEN DRAIN NAND GATE

文件：232.88 Kbytes Page：11 Pages