丝印代码：VHC03；CMOS Digital Integrated Circuits Silicon Monolithic

Functional Description • Quad 2-Input NAND Gate (Open Drain) General The 74VHC03FT is an advanced high speed CMOS 2-INPUT NAND GATE fabricated with silicon gate C2MOS technology. It achieves the high speed operation similar to equivalent Bipolar Schottky TTL while maintaining the CMOS low

74VHC CMOS logic IC series

Function：Quad 2-Input NAND Gate (Open Drain)\nNumber of Circuits：4\nAEC-Q100：Conform(*)\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：日本

封装/外壳：14-TSSOP（0.173"，4.40mm 宽） 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：IC GATE NAND OD 4CH 2-IN 14TSSOP 集成电路（IC） 门和反相器

QUAD 2-INPUT OPEN DRAIN NAND GATE

DESCRIPTION The 74VHC03 is an advanced high-speed CMOS QUAD 2-INPUT OPEN DRAIN NAND GATE fabricated with sub-micron silicon gate and double-layer metal wiring C2MOS technology. ■ HIGH SPEED: tPD = 3.7ns (TYP.) at VCC = 5V ■ LOW POWER DISSIPATION: ICC = 2 µA (MAX.) at TA=25°C ■ HIGH NOISE IMMUN

QUAD 2-INPUT OPEN DRAIN NAND GATE

DESCRIPTION The 74VHC03 is an advanced high-speed CMOS QUAD 2-INPUT OPEN DRAIN NAND GATE fabricated with sub-micron silicon gate and double-layer metal wiring C2MOS technology. ■ HIGH SPEED: tPD = 3.7ns (TYP.) at VCC = 5V ■ LOW POWER DISSIPATION: ICC = 2 µA (MAX.) at TA=25°C ■ HIGH NOISE IMMUN

QUAD 2-INPUT OPEN DRAIN NAND GATE

DESCRIPTION The 74VHC03 is an advanced high-speed CMOS QUAD 2-INPUT OPEN DRAIN NAND GATE fabricated with sub-micron silicon gate and double-layer metal wiring C2MOS technology. ■ HIGH SPEED: tPD = 3.7ns (TYP.) at VCC = 5V ■ LOW POWER DISSIPATION: ICC = 2 µA (MAX.) at TA=25°C ■ HIGH NOISE IMMUN

QUAD 2 -INPUT NAND GATE(OPER DRAIN)

文件：254.84 Kbytes Page：6 Pages

QUAD 2 -INPUT NAND GATE(OPER DRAIN)

文件：254.84 Kbytes Page：6 Pages