HEX INVERTER OPEN DRAIN

DESCRIPTION The 74VHC05 is an advanced high-speed CMOS OPEN DRAIN HEX INVERTER fabricated with sub-micron silicon gate and double-layer metal wiring C2MOS technology. ■ HIGH SPEED: tPD = 3.8ns (TYP.) at VCC = 5V ■ LOW POWER DISSIPATION: ICC = 2 µA (MAX.) at TA=25°C ■ HIGH NOISE IMMUN

HEX INVERTER OPEN DRAIN

HEX INVERTER OPEN DRAIN

DESCRIPTION The 74VHC05 is an advanced high-speed CMOS OPEN DRAIN HEX INVERTER fabricated with sub-micron silicon gate and double-layer metal wiring C2MOS technology. ■ HIGH SPEED: tPD = 3.8ns (TYP.) at VCC = 5V ■ LOW POWER DISSIPATION: ICC = 2 µA (MAX.) at TA=25°C ■ HIGH NOISE IMMUN

HEX INVERTER (OPEN DRAIN)

文件：224.92 Kbytes Page：11 Pages

HEX INVERTER (OPEN DRAIN)

文件：224.92 Kbytes Page：11 Pages

封装/外壳：14-TSSOP（0.173"，4.40mm 宽） 包装：管件 描述：IC INVERTER OD 6CH 1-INP 14TSSOP 集成电路（IC） 门和反相器

CMOS Digital Integrated Circuits Silicon Monolithic

Functional Description • Hex Inverter (Open Drain) General The 74VHC05FT is an advanced high speed CMOS INVERTER fabricated with silicon gate C2MOS technology. It achieves the high speed operation similar to equivalent Bipolar Schottky TTL while maintaining the CMOS low power dissipation.

HEX INVERTER OPEN DRAIN

DESCRIPTION The 74VHC05 is an advanced high-speed CMOS OPEN DRAIN HEX INVERTER fabricated with sub-micron silicon gate and double-layer metal wiring C2MOS technology. ■ HIGH SPEED: tPD = 3.8ns (TYP.) at VCC = 5V ■ LOW POWER DISSIPATION: ICC = 2 µA (MAX.) at TA=25°C ■ HIGH NOISE IMMUN

HEX INVERTER (OPEN DRAIN)

文件：224.92 Kbytes Page：11 Pages