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71T75价格

参考价格：￥156.5175

型号：71T75602S133BGGI 品牌：IDT 备注：这里有71T75多少钱，2025年最近7天走势，今日出价，今日竞价，71T75批发/采购报价，71T75行情走势销售排行榜，71T75报价。

型号	功能描述	生产厂家企业	LOGO
71T75602	512K x 36, 1M x 18 2.5V Synchronous ZBT™ SRAMs 2.5V I/O, Burst Counter Pipelined Outputs Features ◆ 512K x 36, 1M x 18 memory configurations ◆ Supports high performance system speed - 200 MHz (3.2 ns Clock-to-Data Access) ◆ ZBTTM Feature - No dead cycles between write and read cycles ◆ Internally synchronized output buffer enable eliminates the need to control OE ◆ Single R/W	RENESAS 瑞萨	RENESAS
71T75602S100BG	512K x 36, 1M x 18 2.5V Synchronous ZBT™ SRAMs 2.5V I/O, Burst Counter Pipelined Outputs Features ◆ 512K x 36, 1M x 18 memory configurations ◆ Supports high performance system speed - 200 MHz (3.2 ns Clock-to-Data Access) ◆ ZBTTM Feature - No dead cycles between write and read cycles ◆ Internally synchronized output buffer enable eliminates the need to control OE ◆ Single R/W	RENESAS 瑞萨	RENESAS
71T75602S100BG8	512K x 36, 1M x 18 2.5V Synchronous ZBT™ SRAMs 2.5V I/O, Burst Counter Pipelined Outputs Features ◆ 512K x 36, 1M x 18 memory configurations ◆ Supports high performance system speed - 200 MHz (3.2 ns Clock-to-Data Access) ◆ ZBTTM Feature - No dead cycles between write and read cycles ◆ Internally synchronized output buffer enable eliminates the need to control OE ◆ Single R/W	RENESAS 瑞萨	RENESAS
71T75602S100BGG	512K x 36, 1M x 18 2.5V Synchronous ZBT™ SRAMs 2.5V I/O, Burst Counter Pipelined Outputs Features ◆ 512K x 36, 1M x 18 memory configurations ◆ Supports high performance system speed - 200 MHz (3.2 ns Clock-to-Data Access) ◆ ZBTTM Feature - No dead cycles between write and read cycles ◆ Internally synchronized output buffer enable eliminates the need to control OE ◆ Single R/W	RENESAS 瑞萨	RENESAS
71T75602S100BGG8	512K x 36, 1M x 18 2.5V Synchronous ZBT™ SRAMs 2.5V I/O, Burst Counter Pipelined Outputs Features ◆ 512K x 36, 1M x 18 memory configurations ◆ Supports high performance system speed - 200 MHz (3.2 ns Clock-to-Data Access) ◆ ZBTTM Feature - No dead cycles between write and read cycles ◆ Internally synchronized output buffer enable eliminates the need to control OE ◆ Single R/W	RENESAS 瑞萨	RENESAS
71T75602S100BGGI	512K x 36, 1M x 18 2.5V Synchronous ZBT™ SRAMs 2.5V I/O, Burst Counter Pipelined Outputs Features ◆ 512K x 36, 1M x 18 memory configurations ◆ Supports high performance system speed - 200 MHz (3.2 ns Clock-to-Data Access) ◆ ZBTTM Feature - No dead cycles between write and read cycles ◆ Internally synchronized output buffer enable eliminates the need to control OE ◆ Single R/W	RENESAS 瑞萨	RENESAS
71T75602S100BGGI8	512K x 36, 1M x 18 2.5V Synchronous ZBT™ SRAMs 2.5V I/O, Burst Counter Pipelined Outputs Features ◆ 512K x 36, 1M x 18 memory configurations ◆ Supports high performance system speed - 200 MHz (3.2 ns Clock-to-Data Access) ◆ ZBTTM Feature - No dead cycles between write and read cycles ◆ Internally synchronized output buffer enable eliminates the need to control OE ◆ Single R/W	RENESAS 瑞萨	RENESAS
71T75602S100BGI	512K x 36, 1M x 18 2.5V Synchronous ZBT™ SRAMs 2.5V I/O, Burst Counter Pipelined Outputs Features ◆ 512K x 36, 1M x 18 memory configurations ◆ Supports high performance system speed - 200 MHz (3.2 ns Clock-to-Data Access) ◆ ZBTTM Feature - No dead cycles between write and read cycles ◆ Internally synchronized output buffer enable eliminates the need to control OE ◆ Single R/W	RENESAS 瑞萨	RENESAS
71T75602S100BGI8	512K x 36, 1M x 18 2.5V Synchronous ZBT™ SRAMs 2.5V I/O, Burst Counter Pipelined Outputs Features ◆ 512K x 36, 1M x 18 memory configurations ◆ Supports high performance system speed - 200 MHz (3.2 ns Clock-to-Data Access) ◆ ZBTTM Feature - No dead cycles between write and read cycles ◆ Internally synchronized output buffer enable eliminates the need to control OE ◆ Single R/W	RENESAS 瑞萨	RENESAS
71T75602S133BG	512K x 36, 1M x 18 2.5V Synchronous ZBT™ SRAMs 2.5V I/O, Burst Counter Pipelined Outputs Features ◆ 512K x 36, 1M x 18 memory configurations ◆ Supports high performance system speed - 200 MHz (3.2 ns Clock-to-Data Access) ◆ ZBTTM Feature - No dead cycles between write and read cycles ◆ Internally synchronized output buffer enable eliminates the need to control OE ◆ Single R/W	RENESAS 瑞萨	RENESAS
71T75602S133BG8	512K x 36, 1M x 18 2.5V Synchronous ZBT™ SRAMs 2.5V I/O, Burst Counter Pipelined Outputs Features ◆ 512K x 36, 1M x 18 memory configurations ◆ Supports high performance system speed - 200 MHz (3.2 ns Clock-to-Data Access) ◆ ZBTTM Feature - No dead cycles between write and read cycles ◆ Internally synchronized output buffer enable eliminates the need to control OE ◆ Single R/W	RENESAS 瑞萨	RENESAS
71T75602S133BGG	512K x 36, 1M x 18 2.5V Synchronous ZBT™ SRAMs 2.5V I/O, Burst Counter Pipelined Outputs Features ◆ 512K x 36, 1M x 18 memory configurations ◆ Supports high performance system speed - 200 MHz (3.2 ns Clock-to-Data Access) ◆ ZBTTM Feature - No dead cycles between write and read cycles ◆ Internally synchronized output buffer enable eliminates the need to control OE ◆ Single R/W	RENESAS 瑞萨	RENESAS
71T75602S133BGG8	512K x 36, 1M x 18 2.5V Synchronous ZBT™ SRAMs 2.5V I/O, Burst Counter Pipelined Outputs Features ◆ 512K x 36, 1M x 18 memory configurations ◆ Supports high performance system speed - 200 MHz (3.2 ns Clock-to-Data Access) ◆ ZBTTM Feature - No dead cycles between write and read cycles ◆ Internally synchronized output buffer enable eliminates the need to control OE ◆ Single R/W	RENESAS 瑞萨	RENESAS
71T75602S133BGGI	512K x 36, 1M x 18 2.5V Synchronous ZBT™ SRAMs 2.5V I/O, Burst Counter Pipelined Outputs Features ◆ 512K x 36, 1M x 18 memory configurations ◆ Supports high performance system speed - 200 MHz (3.2 ns Clock-to-Data Access) ◆ ZBTTM Feature - No dead cycles between write and read cycles ◆ Internally synchronized output buffer enable eliminates the need to control OE ◆ Single R/W	RENESAS 瑞萨	RENESAS
71T75602S133BGI	512K x 36, 1M x 18 2.5V Synchronous ZBT™ SRAMs 2.5V I/O, Burst Counter Pipelined Outputs Features ◆ 512K x 36, 1M x 18 memory configurations ◆ Supports high performance system speed - 200 MHz (3.2 ns Clock-to-Data Access) ◆ ZBTTM Feature - No dead cycles between write and read cycles ◆ Internally synchronized output buffer enable eliminates the need to control OE ◆ Single R/W	RENESAS 瑞萨	RENESAS
71T75602S133BGI8	512K x 36, 1M x 18 2.5V Synchronous ZBT™ SRAMs 2.5V I/O, Burst Counter Pipelined Outputs Features ◆ 512K x 36, 1M x 18 memory configurations ◆ Supports high performance system speed - 200 MHz (3.2 ns Clock-to-Data Access) ◆ ZBTTM Feature - No dead cycles between write and read cycles ◆ Internally synchronized output buffer enable eliminates the need to control OE ◆ Single R/W	RENESAS 瑞萨	RENESAS
71T75602S133PFG	512K x 36, 1M x 18 2.5V Synchronous ZBT™ SRAMs 2.5V I/O, Burst Counter Pipelined Outputs Features ◆ 512K x 36, 1M x 18 memory configurations ◆ Supports high performance system speed - 200 MHz (3.2 ns Clock-to-Data Access) ◆ ZBTTM Feature - No dead cycles between write and read cycles ◆ Internally synchronized output buffer enable eliminates the need to control OE ◆ Single R/W	RENESAS 瑞萨	RENESAS
71T75602S133PFG8	512K x 36, 1M x 18 2.5V Synchronous ZBT™ SRAMs 2.5V I/O, Burst Counter Pipelined Outputs Features ◆ 512K x 36, 1M x 18 memory configurations ◆ Supports high performance system speed - 200 MHz (3.2 ns Clock-to-Data Access) ◆ ZBTTM Feature - No dead cycles between write and read cycles ◆ Internally synchronized output buffer enable eliminates the need to control OE ◆ Single R/W	RENESAS 瑞萨	RENESAS
71T75602S133PFGI	512K x 36, 1M x 18 2.5V Synchronous ZBT™ SRAMs 2.5V I/O, Burst Counter Pipelined Outputs Features ◆ 512K x 36, 1M x 18 memory configurations ◆ Supports high performance system speed - 200 MHz (3.2 ns Clock-to-Data Access) ◆ ZBTTM Feature - No dead cycles between write and read cycles ◆ Internally synchronized output buffer enable eliminates the need to control OE ◆ Single R/W	RENESAS 瑞萨	RENESAS
71T75602S133PFGI8	512K x 36, 1M x 18 2.5V Synchronous ZBT™ SRAMs 2.5V I/O, Burst Counter Pipelined Outputs Features ◆ 512K x 36, 1M x 18 memory configurations ◆ Supports high performance system speed - 200 MHz (3.2 ns Clock-to-Data Access) ◆ ZBTTM Feature - No dead cycles between write and read cycles ◆ Internally synchronized output buffer enable eliminates the need to control OE ◆ Single R/W	RENESAS 瑞萨	RENESAS
71T75602S150BG	512K x 36, 1M x 18 2.5V Synchronous ZBT™ SRAMs 2.5V I/O, Burst Counter Pipelined Outputs Features ◆ 512K x 36, 1M x 18 memory configurations ◆ Supports high performance system speed - 200 MHz (3.2 ns Clock-to-Data Access) ◆ ZBTTM Feature - No dead cycles between write and read cycles ◆ Internally synchronized output buffer enable eliminates the need to control OE ◆ Single R/W	RENESAS 瑞萨	RENESAS
71T75602S150BG8	512K x 36, 1M x 18 2.5V Synchronous ZBT™ SRAMs 2.5V I/O, Burst Counter Pipelined Outputs Features ◆ 512K x 36, 1M x 18 memory configurations ◆ Supports high performance system speed - 200 MHz (3.2 ns Clock-to-Data Access) ◆ ZBTTM Feature - No dead cycles between write and read cycles ◆ Internally synchronized output buffer enable eliminates the need to control OE ◆ Single R/W	RENESAS 瑞萨	RENESAS
71T75602S150BGG	512K x 36, 1M x 18 2.5V Synchronous ZBT™ SRAMs 2.5V I/O, Burst Counter Pipelined Outputs Features ◆ 512K x 36, 1M x 18 memory configurations ◆ Supports high performance system speed - 200 MHz (3.2 ns Clock-to-Data Access) ◆ ZBTTM Feature - No dead cycles between write and read cycles ◆ Internally synchronized output buffer enable eliminates the need to control OE ◆ Single R/W	RENESAS 瑞萨	RENESAS
71T75602S150BGG8	512K x 36, 1M x 18 2.5V Synchronous ZBT™ SRAMs 2.5V I/O, Burst Counter Pipelined Outputs Features ◆ 512K x 36, 1M x 18 memory configurations ◆ Supports high performance system speed - 200 MHz (3.2 ns Clock-to-Data Access) ◆ ZBTTM Feature - No dead cycles between write and read cycles ◆ Internally synchronized output buffer enable eliminates the need to control OE ◆ Single R/W	RENESAS 瑞萨	RENESAS
71T75602S150BGGI	512K x 36, 1M x 18 2.5V Synchronous ZBT™ SRAMs 2.5V I/O, Burst Counter Pipelined Outputs Features ◆ 512K x 36, 1M x 18 memory configurations ◆ Supports high performance system speed - 200 MHz (3.2 ns Clock-to-Data Access) ◆ ZBTTM Feature - No dead cycles between write and read cycles ◆ Internally synchronized output buffer enable eliminates the need to control OE ◆ Single R/W	RENESAS 瑞萨	RENESAS
71T75602S150BGGI8	512K x 36, 1M x 18 2.5V Synchronous ZBT™ SRAMs 2.5V I/O, Burst Counter Pipelined Outputs Features ◆ 512K x 36, 1M x 18 memory configurations ◆ Supports high performance system speed - 200 MHz (3.2 ns Clock-to-Data Access) ◆ ZBTTM Feature - No dead cycles between write and read cycles ◆ Internally synchronized output buffer enable eliminates the need to control OE ◆ Single R/W	RENESAS 瑞萨	RENESAS
71T75602S150BGI	512K x 36, 1M x 18 2.5V Synchronous ZBT™ SRAMs 2.5V I/O, Burst Counter Pipelined Outputs Features ◆ 512K x 36, 1M x 18 memory configurations ◆ Supports high performance system speed - 200 MHz (3.2 ns Clock-to-Data Access) ◆ ZBTTM Feature - No dead cycles between write and read cycles ◆ Internally synchronized output buffer enable eliminates the need to control OE ◆ Single R/W	RENESAS 瑞萨	RENESAS
71T75602S150BGI8	512K x 36, 1M x 18 2.5V Synchronous ZBT™ SRAMs 2.5V I/O, Burst Counter Pipelined Outputs Features ◆ 512K x 36, 1M x 18 memory configurations ◆ Supports high performance system speed - 200 MHz (3.2 ns Clock-to-Data Access) ◆ ZBTTM Feature - No dead cycles between write and read cycles ◆ Internally synchronized output buffer enable eliminates the need to control OE ◆ Single R/W	RENESAS 瑞萨	RENESAS
71T75602S150PFG	512K x 36, 1M x 18 2.5V Synchronous ZBT™ SRAMs 2.5V I/O, Burst Counter Pipelined Outputs Features ◆ 512K x 36, 1M x 18 memory configurations ◆ Supports high performance system speed - 200 MHz (3.2 ns Clock-to-Data Access) ◆ ZBTTM Feature - No dead cycles between write and read cycles ◆ Internally synchronized output buffer enable eliminates the need to control OE ◆ Single R/W	RENESAS 瑞萨	RENESAS
71T75602S150PFG8	512K x 36, 1M x 18 2.5V Synchronous ZBT™ SRAMs 2.5V I/O, Burst Counter Pipelined Outputs Features ◆ 512K x 36, 1M x 18 memory configurations ◆ Supports high performance system speed - 200 MHz (3.2 ns Clock-to-Data Access) ◆ ZBTTM Feature - No dead cycles between write and read cycles ◆ Internally synchronized output buffer enable eliminates the need to control OE ◆ Single R/W	RENESAS 瑞萨	RENESAS
71T75602S150PFGI	512K x 36, 1M x 18 2.5V Synchronous ZBT™ SRAMs 2.5V I/O, Burst Counter Pipelined Outputs Features ◆ 512K x 36, 1M x 18 memory configurations ◆ Supports high performance system speed - 200 MHz (3.2 ns Clock-to-Data Access) ◆ ZBTTM Feature - No dead cycles between write and read cycles ◆ Internally synchronized output buffer enable eliminates the need to control OE ◆ Single R/W	RENESAS 瑞萨	RENESAS
71T75602S150PFGI8	512K x 36, 1M x 18 2.5V Synchronous ZBT™ SRAMs 2.5V I/O, Burst Counter Pipelined Outputs Features ◆ 512K x 36, 1M x 18 memory configurations ◆ Supports high performance system speed - 200 MHz (3.2 ns Clock-to-Data Access) ◆ ZBTTM Feature - No dead cycles between write and read cycles ◆ Internally synchronized output buffer enable eliminates the need to control OE ◆ Single R/W	RENESAS 瑞萨	RENESAS
71T75602S166BG	512K x 36, 1M x 18 2.5V Synchronous ZBT™ SRAMs 2.5V I/O, Burst Counter Pipelined Outputs Features ◆ 512K x 36, 1M x 18 memory configurations ◆ Supports high performance system speed - 200 MHz (3.2 ns Clock-to-Data Access) ◆ ZBTTM Feature - No dead cycles between write and read cycles ◆ Internally synchronized output buffer enable eliminates the need to control OE ◆ Single R/W	RENESAS 瑞萨	RENESAS
71T75602S166BG8	512K x 36, 1M x 18 2.5V Synchronous ZBT™ SRAMs 2.5V I/O, Burst Counter Pipelined Outputs Features ◆ 512K x 36, 1M x 18 memory configurations ◆ Supports high performance system speed - 200 MHz (3.2 ns Clock-to-Data Access) ◆ ZBTTM Feature - No dead cycles between write and read cycles ◆ Internally synchronized output buffer enable eliminates the need to control OE ◆ Single R/W	RENESAS 瑞萨	RENESAS
71T75602S166BGG	512K x 36, 1M x 18 2.5V Synchronous ZBT™ SRAMs 2.5V I/O, Burst Counter Pipelined Outputs Features ◆ 512K x 36, 1M x 18 memory configurations ◆ Supports high performance system speed - 200 MHz (3.2 ns Clock-to-Data Access) ◆ ZBTTM Feature - No dead cycles between write and read cycles ◆ Internally synchronized output buffer enable eliminates the need to control OE ◆ Single R/W	RENESAS 瑞萨	RENESAS
71T75602S166BGG8	512K x 36, 1M x 18 2.5V Synchronous ZBT™ SRAMs 2.5V I/O, Burst Counter Pipelined Outputs Features ◆ 512K x 36, 1M x 18 memory configurations ◆ Supports high performance system speed - 200 MHz (3.2 ns Clock-to-Data Access) ◆ ZBTTM Feature - No dead cycles between write and read cycles ◆ Internally synchronized output buffer enable eliminates the need to control OE ◆ Single R/W	RENESAS 瑞萨	RENESAS
71T75602S166BGGI	512K x 36, 1M x 18 2.5V Synchronous ZBT™ SRAMs 2.5V I/O, Burst Counter Pipelined Outputs Features ◆ 512K x 36, 1M x 18 memory configurations ◆ Supports high performance system speed - 200 MHz (3.2 ns Clock-to-Data Access) ◆ ZBTTM Feature - No dead cycles between write and read cycles ◆ Internally synchronized output buffer enable eliminates the need to control OE ◆ Single R/W	RENESAS 瑞萨	RENESAS
71T75602S166BGGI8	512K x 36, 1M x 18 2.5V Synchronous ZBT™ SRAMs 2.5V I/O, Burst Counter Pipelined Outputs Features ◆ 512K x 36, 1M x 18 memory configurations ◆ Supports high performance system speed - 200 MHz (3.2 ns Clock-to-Data Access) ◆ ZBTTM Feature - No dead cycles between write and read cycles ◆ Internally synchronized output buffer enable eliminates the need to control OE ◆ Single R/W	RENESAS 瑞萨	RENESAS
71T75602S166BGI	512K x 36, 1M x 18 2.5V Synchronous ZBT™ SRAMs 2.5V I/O, Burst Counter Pipelined Outputs Features ◆ 512K x 36, 1M x 18 memory configurations ◆ Supports high performance system speed - 200 MHz (3.2 ns Clock-to-Data Access) ◆ ZBTTM Feature - No dead cycles between write and read cycles ◆ Internally synchronized output buffer enable eliminates the need to control OE ◆ Single R/W	RENESAS 瑞萨	RENESAS
71T75602S166BGI8	512K x 36, 1M x 18 2.5V Synchronous ZBT™ SRAMs 2.5V I/O, Burst Counter Pipelined Outputs Features ◆ 512K x 36, 1M x 18 memory configurations ◆ Supports high performance system speed - 200 MHz (3.2 ns Clock-to-Data Access) ◆ ZBTTM Feature - No dead cycles between write and read cycles ◆ Internally synchronized output buffer enable eliminates the need to control OE ◆ Single R/W	RENESAS 瑞萨	RENESAS
71T75602S166PFG	512K x 36, 1M x 18 2.5V Synchronous ZBT™ SRAMs 2.5V I/O, Burst Counter Pipelined Outputs Features ◆ 512K x 36, 1M x 18 memory configurations ◆ Supports high performance system speed - 200 MHz (3.2 ns Clock-to-Data Access) ◆ ZBTTM Feature - No dead cycles between write and read cycles ◆ Internally synchronized output buffer enable eliminates the need to control OE ◆ Single R/W	RENESAS 瑞萨	RENESAS
71T75602S166PFG8	512K x 36, 1M x 18 2.5V Synchronous ZBT™ SRAMs 2.5V I/O, Burst Counter Pipelined Outputs Features ◆ 512K x 36, 1M x 18 memory configurations ◆ Supports high performance system speed - 200 MHz (3.2 ns Clock-to-Data Access) ◆ ZBTTM Feature - No dead cycles between write and read cycles ◆ Internally synchronized output buffer enable eliminates the need to control OE ◆ Single R/W	RENESAS 瑞萨	RENESAS
71T75602S166PFGI	512K x 36, 1M x 18 2.5V Synchronous ZBT™ SRAMs 2.5V I/O, Burst Counter Pipelined Outputs Features ◆ 512K x 36, 1M x 18 memory configurations ◆ Supports high performance system speed - 200 MHz (3.2 ns Clock-to-Data Access) ◆ ZBTTM Feature - No dead cycles between write and read cycles ◆ Internally synchronized output buffer enable eliminates the need to control OE ◆ Single R/W	RENESAS 瑞萨	RENESAS
71T75602S166PFGI8	512K x 36, 1M x 18 2.5V Synchronous ZBT™ SRAMs 2.5V I/O, Burst Counter Pipelined Outputs Features ◆ 512K x 36, 1M x 18 memory configurations ◆ Supports high performance system speed - 200 MHz (3.2 ns Clock-to-Data Access) ◆ ZBTTM Feature - No dead cycles between write and read cycles ◆ Internally synchronized output buffer enable eliminates the need to control OE ◆ Single R/W	RENESAS 瑞萨	RENESAS
71T75802S100BG	512K x 36, 1M x 18 2.5V Synchronous ZBT™ SRAMs 2.5V I/O, Burst Counter Pipelined Outputs Features ◆ 512K x 36, 1M x 18 memory configurations ◆ Supports high performance system speed - 200 MHz (3.2 ns Clock-to-Data Access) ◆ ZBTTM Feature - No dead cycles between write and read cycles ◆ Internally synchronized output buffer enable eliminates the need to control OE ◆ Single R/W	RENESAS 瑞萨	RENESAS
71T75802S100BG8	512K x 36, 1M x 18 2.5V Synchronous ZBT™ SRAMs 2.5V I/O, Burst Counter Pipelined Outputs Features ◆ 512K x 36, 1M x 18 memory configurations ◆ Supports high performance system speed - 200 MHz (3.2 ns Clock-to-Data Access) ◆ ZBTTM Feature - No dead cycles between write and read cycles ◆ Internally synchronized output buffer enable eliminates the need to control OE ◆ Single R/W	RENESAS 瑞萨	RENESAS
71T75802S100BGGI	512K x 36, 1M x 18 2.5V Synchronous ZBT™ SRAMs 2.5V I/O, Burst Counter Pipelined Outputs Features ◆ 512K x 36, 1M x 18 memory configurations ◆ Supports high performance system speed - 200 MHz (3.2 ns Clock-to-Data Access) ◆ ZBTTM Feature - No dead cycles between write and read cycles ◆ Internally synchronized output buffer enable eliminates the need to control OE ◆ Single R/W	RENESAS 瑞萨	RENESAS
71T75802S100BGGI8	512K x 36, 1M x 18 2.5V Synchronous ZBT™ SRAMs 2.5V I/O, Burst Counter Pipelined Outputs Features ◆ 512K x 36, 1M x 18 memory configurations ◆ Supports high performance system speed - 200 MHz (3.2 ns Clock-to-Data Access) ◆ ZBTTM Feature - No dead cycles between write and read cycles ◆ Internally synchronized output buffer enable eliminates the need to control OE ◆ Single R/W	RENESAS 瑞萨	RENESAS
71T75802S100BGI	512K x 36, 1M x 18 2.5V Synchronous ZBT™ SRAMs 2.5V I/O, Burst Counter Pipelined Outputs Features ◆ 512K x 36, 1M x 18 memory configurations ◆ Supports high performance system speed - 200 MHz (3.2 ns Clock-to-Data Access) ◆ ZBTTM Feature - No dead cycles between write and read cycles ◆ Internally synchronized output buffer enable eliminates the need to control OE ◆ Single R/W	RENESAS 瑞萨	RENESAS
71T75802S100BGI8	512K x 36, 1M x 18 2.5V Synchronous ZBT™ SRAMs 2.5V I/O, Burst Counter Pipelined Outputs Features ◆ 512K x 36, 1M x 18 memory configurations ◆ Supports high performance system speed - 200 MHz (3.2 ns Clock-to-Data Access) ◆ ZBTTM Feature - No dead cycles between write and read cycles ◆ Internally synchronized output buffer enable eliminates the need to control OE ◆ Single R/W	RENESAS 瑞萨	RENESAS
71T75802S133BG	512K x 36, 1M x 18 2.5V Synchronous ZBT™ SRAMs 2.5V I/O, Burst Counter Pipelined Outputs Features ◆ 512K x 36, 1M x 18 memory configurations ◆ Supports high performance system speed - 200 MHz (3.2 ns Clock-to-Data Access) ◆ ZBTTM Feature - No dead cycles between write and read cycles ◆ Internally synchronized output buffer enable eliminates the need to control OE ◆ Single R/W	RENESAS 瑞萨	RENESAS
71T75802S133BG8	512K x 36, 1M x 18 2.5V Synchronous ZBT™ SRAMs 2.5V I/O, Burst Counter Pipelined Outputs Features ◆ 512K x 36, 1M x 18 memory configurations ◆ Supports high performance system speed - 200 MHz (3.2 ns Clock-to-Data Access) ◆ ZBTTM Feature - No dead cycles between write and read cycles ◆ Internally synchronized output buffer enable eliminates the need to control OE ◆ Single R/W	RENESAS 瑞萨	RENESAS
71T75802S133BGG	512K x 36, 1M x 18 2.5V Synchronous ZBT™ SRAMs 2.5V I/O, Burst Counter Pipelined Outputs Features ◆ 512K x 36, 1M x 18 memory configurations ◆ Supports high performance system speed - 200 MHz (3.2 ns Clock-to-Data Access) ◆ ZBTTM Feature - No dead cycles between write and read cycles ◆ Internally synchronized output buffer enable eliminates the need to control OE ◆ Single R/W	RENESAS 瑞萨	RENESAS
71T75802S133BGG8	512K x 36, 1M x 18 2.5V Synchronous ZBT™ SRAMs 2.5V I/O, Burst Counter Pipelined Outputs Features ◆ 512K x 36, 1M x 18 memory configurations ◆ Supports high performance system speed - 200 MHz (3.2 ns Clock-to-Data Access) ◆ ZBTTM Feature - No dead cycles between write and read cycles ◆ Internally synchronized output buffer enable eliminates the need to control OE ◆ Single R/W	RENESAS 瑞萨	RENESAS
71T75802S133BGGI	512K x 36, 1M x 18 2.5V Synchronous ZBT™ SRAMs 2.5V I/O, Burst Counter Pipelined Outputs Features ◆ 512K x 36, 1M x 18 memory configurations ◆ Supports high performance system speed - 200 MHz (3.2 ns Clock-to-Data Access) ◆ ZBTTM Feature - No dead cycles between write and read cycles ◆ Internally synchronized output buffer enable eliminates the need to control OE ◆ Single R/W	RENESAS 瑞萨	RENESAS
71T75802S133BGGI8	512K x 36, 1M x 18 2.5V Synchronous ZBT™ SRAMs 2.5V I/O, Burst Counter Pipelined Outputs Features ◆ 512K x 36, 1M x 18 memory configurations ◆ Supports high performance system speed - 200 MHz (3.2 ns Clock-to-Data Access) ◆ ZBTTM Feature - No dead cycles between write and read cycles ◆ Internally synchronized output buffer enable eliminates the need to control OE ◆ Single R/W	RENESAS 瑞萨	RENESAS
71T75802S133BGI	512K x 36, 1M x 18 2.5V Synchronous ZBT™ SRAMs 2.5V I/O, Burst Counter Pipelined Outputs Features ◆ 512K x 36, 1M x 18 memory configurations ◆ Supports high performance system speed - 200 MHz (3.2 ns Clock-to-Data Access) ◆ ZBTTM Feature - No dead cycles between write and read cycles ◆ Internally synchronized output buffer enable eliminates the need to control OE ◆ Single R/W	RENESAS 瑞萨	RENESAS
71T75802S133BGI8	512K x 36, 1M x 18 2.5V Synchronous ZBT™ SRAMs 2.5V I/O, Burst Counter Pipelined Outputs Features ◆ 512K x 36, 1M x 18 memory configurations ◆ Supports high performance system speed - 200 MHz (3.2 ns Clock-to-Data Access) ◆ ZBTTM Feature - No dead cycles between write and read cycles ◆ Internally synchronized output buffer enable eliminates the need to control OE ◆ Single R/W	RENESAS 瑞萨	RENESAS
71T75802S133PFG	512K x 36, 1M x 18 2.5V Synchronous ZBT™ SRAMs 2.5V I/O, Burst Counter Pipelined Outputs Features ◆ 512K x 36, 1M x 18 memory configurations ◆ Supports high performance system speed - 200 MHz (3.2 ns Clock-to-Data Access) ◆ ZBTTM Feature - No dead cycles between write and read cycles ◆ Internally synchronized output buffer enable eliminates the need to control OE ◆ Single R/W	RENESAS 瑞萨	RENESAS
71T75802S133PFG8	512K x 36, 1M x 18 2.5V Synchronous ZBT™ SRAMs 2.5V I/O, Burst Counter Pipelined Outputs Features ◆ 512K x 36, 1M x 18 memory configurations ◆ Supports high performance system speed - 200 MHz (3.2 ns Clock-to-Data Access) ◆ ZBTTM Feature - No dead cycles between write and read cycles ◆ Internally synchronized output buffer enable eliminates the need to control OE ◆ Single R/W	RENESAS 瑞萨	RENESAS

71T75产品属性

类型
描述
型号
71T75
功能描述
静态随机存取存储器
RoHS
否
制造商
Cypress Semiconductor
存储容量
16 Mbit
组织
1 M x 16
访问时间
55 ns
电源电压-最大
3.6 V
电源电压-最小
2.2 V
最大工作电流
22 uA
最大工作温度
+ 85 C
最小工作温度
- 40 C
安装风格
SMD/SMT
封装/箱体
TSOP-48
封装
Tray

71T75供应商更多...

更新时间：2025-12-28 16:30:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市冠亿通科技有限公司	71T75602S150BGGI8	Renesas	25+		25000	原厂原包深圳现货主打品牌假一赔百可开票!	询价
标准国际(香港)有限公司	71T75602S166BGI	71T75602S166BGI	25+	10	10		询价
艾睿（深圳）半导体有限公司	71T75602S100BG8	RENESAS(瑞萨)/IDT	2447	PBGA-119(14x22)	315000	1000个/圆盘一级代理专营品牌!原装正品,优势现货,	询价
深圳市宇创芯科技有限公司	71T75602S133BGI8	RENESAS(瑞萨)/IDT	24+	PBGA-119(14x22)	16508	原装正品现货支持实单	询价
深圳市斌腾达科技有限公司	71T75602S166BGI	IDT, Integrated Device Technol	21+	119-BGA	5280	进口原装!长期供应!绝对优势价格(诚信经营	询价
贸泽芯城（深圳）电子科技有限公司	71T75602S166BGG	IDT	23+	BGA	5000	原厂授权代理,海外优势订货渠道。可提供大量库存,详	询价
现代芯城（深圳）科技有限公司	71T75602S166PFGI8		24+	N/A	82000	一级代理-主营优势-实惠价格-不悔选择	询价
深圳市福安瓯科技有限公司	71T75602S200PFG	IDT	25+	QFP100	2020	长期原装现货,特价供应!	询价
深圳市芯为科技有限公司	71T75602S166PFGI	Renesas	25+	电联咨询	7800	公司现货,提供拆样技术支持	询价
瀚佳科技(深圳)有限公司	71T75602S166PFGI	IDT, Integrated Device Technol	24+	100-TQFP(14x20)	56200	一级代理/放心采购	询价

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定位: Top View If - 順向電流: 20 mA 封裝: Reel 品牌: Everlight 安裝風格: SMD/SMT 濕度敏感: Yes 產品類型: LED - Standard 原廠包裝數量: 3000 子類別: LEDs
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71T75价格

71T75产品属性

71T75供应商更多...

71T75芯片相关品牌

71T75规格书下载地址

71T75参数引脚图相关

71T75数据表相关新闻

716W-X2/0保证原装正品，现货价美

721-833/001-000

7211MD9AV2BE

7165-0796新到货只做原装，诚信为本！

719502C-2PT

7-215/R6C-AQ1R2B/3T原装现货

DdatasheetPDF页码索引