位置：首页 > IC中文资料 > 71T75602S166BGG
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
71T75602S166BGG | 512K x 36, 1M x 18 2.5V Synchronous ZBT™ SRAMs 2.5V I/O, Burst Counter Pipelined Outputs Features ◆ 512K x 36, 1M x 18 memory configurations ◆ Supports high performance system speed - 200 MHz (3.2 ns Clock-to-Data Access) ◆ ZBTTM Feature - No dead cycles between write and read cycles ◆ Internally synchronized output buffer enable eliminates the need to control OE ◆ Single R/W | RENESAS 瑞萨 |   | |
71T75602S166BGG | 2.5V Synchronous ZBT SRAMs I/O, Burst Counter Pipelined Outputs 文件：260.17 Kbytes Page：26 Pages | IDT | | |
71T75602S166BGG | 封装/外壳：119-BGA 包装：卷带（TR） 描述：IC SRAM 18MBIT PARALLEL 119PBGA 集成电路（IC） 存储器 | ETC 知名厂家 | ETC | |
512K x 36, 1M x 18 2.5V Synchronous ZBT™ SRAMs 2.5V I/O, Burst Counter Pipelined Outputs Features ◆ 512K x 36, 1M x 18 memory configurations ◆ Supports high performance system speed - 200 MHz (3.2 ns Clock-to-Data Access) ◆ ZBTTM Feature - No dead cycles between write and read cycles ◆ Internally synchronized output buffer enable eliminates the need to control OE ◆ Single R/W | RENESAS 瑞萨 | | ||
512K x 36, 1M x 18 2.5V Synchronous ZBT™ SRAMs 2.5V I/O, Burst Counter Pipelined Outputs Features ◆ 512K x 36, 1M x 18 memory configurations ◆ Supports high performance system speed - 200 MHz (3.2 ns Clock-to-Data Access) ◆ ZBTTM Feature - No dead cycles between write and read cycles ◆ Internally synchronized output buffer enable eliminates the need to control OE ◆ Single R/W | RENESAS 瑞萨 | | ||
512K x 36, 1M x 18 2.5V Synchronous ZBT™ SRAMs 2.5V I/O, Burst Counter Pipelined Outputs Features ◆ 512K x 36, 1M x 18 memory configurations ◆ Supports high performance system speed - 200 MHz (3.2 ns Clock-to-Data Access) ◆ ZBTTM Feature - No dead cycles between write and read cycles ◆ Internally synchronized output buffer enable eliminates the need to control OE ◆ Single R/W | RENESAS 瑞萨 | | ||
2.5V Synchronous ZBT SRAMs I/O, Burst Counter Pipelined Outputs 文件：260.17 Kbytes Page：26 Pages | IDT | | ||
2.5V Synchronous ZBT SRAMs I/O, Burst Counter Pipelined Outputs 文件：260.17 Kbytes Page：26 Pages | IDT | | ||
封装/外壳：119-BGA 包装：卷带（TR） 描述：IC SRAM 18MBIT PARALLEL 119PBGA 集成电路（IC） 存储器 | ETC 知名厂家 | ETC | | |
2.5V Synchronous ZBT SRAMs I/O, Burst Counter Pipelined Outputs 文件：260.17 Kbytes Page：26 Pages | IDT | | ||
512K x 36, 1M x 18 2.5V Synchronous ZBT™ SRAMs 2.5V I/O, Burst Counter Pipelined Outputs Features ◆ 512K x 36, 1M x 18 memory configurations ◆ Supports high performance system speed - 200 MHz (3.2 ns Clock-to-Data Access) ◆ ZBTTM Feature - No dead cycles between write and read cycles ◆ Internally synchronized output buffer enable eliminates the need to control OE ◆ Single R/W | RENESAS 瑞萨 | | ||
2.5V Synchronous ZBT SRAMs I/O, Burst Counter Pipelined Outputs 文件：260.17 Kbytes Page：26 Pages | IDT | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IDT |
2450+ |
BGA |
6540 |
只做原装正品假一赔十为客户做到零风险!! |
|||
IDT |
23+ |
BGA |
5000 |
原厂授权代理,海外优势订货渠道。可提供大量库存,详 |
|||
71T75602S166BGI |
25+ |
10 |
10 |
||||
RENESAS(瑞萨)/IDT |
2021+ |
PBGA-119(14x22) |
499 |
||||
Renesas Electronics America In |
25+ |
119-BGA |
9350 |
独立分销商 公司只做原装 诚心经营 免费试样正品保证 |
|||
RENESAS(瑞萨)/IDT |
2447 |
PBGA-119(14x22) |
315000 |
1000个/圆盘一级代理专营品牌!原装正品,优势现货, |
|||
IDT, Integrated Device Technol |
24+ |
119-PBGA(14x22) |
56200 |
一级代理/放心采购 |
|||
RENESAS(瑞萨)/IDT |
24+ |
PBGA-119(14x22) |
16508 |
原装正品现货支持实单 |
|||
IDT |
23+ |
NA |
10726 |
专做原装正品,假一罚百! |
|||
IDT, Integrated Device Technol |
21+ |
119-BGA |
5280 |
进口原装!长期供应!绝对优势价格(诚信经营 |
71T75602S166BGG芯片相关品牌
71T75602S166BGG规格书下载地址
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71T75602S166BGG数据表相关新闻
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定位: Top View If - 順向電流: 20 mA 封裝: Reel 品牌: Everlight 安裝風格: SMD/SMT 濕度敏感: Yes 產品類型: LED - Standard 原廠包裝數量: 3000 子類別: LEDs
2019-11-4
DdatasheetPDF页码索引
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