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型号 功能描述 生产厂家 企业 LOGO 操作
4N80G

高压MOSFET

PINGWEI

N-CHANNEL POWER MOSFET

文件:207.95 Kbytes Page:6 Pages

UTC

友顺

N-CHANNEL POWER MOSFET

文件:207.95 Kbytes Page:6 Pages

UTC

友顺

4.0 Amps, 800 Volts N-CHANNEL POWER MOSFET

文件:165.63 Kbytes Page:6 Pages

UTC

友顺

4.0A, 800V N-CHANNEL POWER MOSFET

文件:201.52 Kbytes Page:6 Pages

UTC

友顺

4.0A, 800V N-CHANNEL POWER MOSFET

文件:201.52 Kbytes Page:6 Pages

UTC

友顺

4.0 Amps, 800 Volts N-CHANNEL POWER MOSFET

文件:165.63 Kbytes Page:6 Pages

UTC

友顺

N-CHANNEL POWER MOSFET

文件:207.95 Kbytes Page:6 Pages

UTC

友顺

N-CHANNEL POWER MOSFET

文件:207.95 Kbytes Page:6 Pages

UTC

友顺

4.0A, 800V N-CHANNEL POWER MOSFET

文件:201.52 Kbytes Page:6 Pages

UTC

友顺

N-CHANNEL POWER MOSFET

文件:207.95 Kbytes Page:6 Pages

UTC

友顺

4.0 Amps, 800 Volts N-CHANNEL POWER MOSFET

文件:165.63 Kbytes Page:6 Pages

UTC

友顺

N-CHANNEL POWER MOSFET

文件:228.68 Kbytes Page:6 Pages

UTC

友顺

N-CHANNEL POWER MOSFET

文件:207.95 Kbytes Page:6 Pages

UTC

友顺

N-CHANNEL POWER MOSFET

文件:228.68 Kbytes Page:6 Pages

UTC

友顺

N-CHANNEL POWER MOSFET

文件:207.95 Kbytes Page:6 Pages

UTC

友顺

4.0A, 800V N-CHANNEL POWER MOSFET

文件:201.52 Kbytes Page:6 Pages

UTC

友顺

4.0A, 800V N-CHANNEL POWER MOSFET

文件:201.52 Kbytes Page:6 Pages

UTC

友顺

N-CHANNEL POWER MOSFET

文件:207.95 Kbytes Page:6 Pages

UTC

友顺

800V N-Channel MOSFET

Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high av

FAIRCHILD

仙童半导体

800V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are product using Fairchilds proprietary, planar stripe, DMOS technology. This advance technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstan

FAIRCHILD

仙童半导体

TMOS POWER FET 4.0 AMPERES 800 VOLTS

TMOS E-FET High Energy Power FET D2PAK for Surface Mount N–Channel Enhancement–Mode Silicon Gate The D2PAK package has the capability of housing a larger die than any existing surface mount package which allows it to be used in applications that require the use of surface mount components with h

MOTOROLA

摩托罗拉

TMOS POWER FET 4.0 AMPERES 800 VOLTS RDS(on) = 3.0 OHM

TMOS E-FET™ Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 4.0 AMPERES 800 VOLTS RDS(on)= 3.0 OHM This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time. In a

MOTOROLA

摩托罗拉

TMOS POWER FET 4.0 AMPERES 800 VOLTS RDS(on) = 3.0 OHM

TMOS E-FET™ Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 4.0 AMPERES 800 VOLTS RDS(on)= 3.0 OHM This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time. In a

MOTOROLA

摩托罗拉

4N80G产品属性

  • 类型

    描述

  • 型号

    4N80G

  • 制造商

    UTC-IC

  • 制造商全称

    UTC-IC

  • 功能描述

    4.0A, 800V N-CHANNEL POWER MOSFET

更新时间:2026-7-23 15:20:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
UTC/友顺
23+
TO-263
63999
原厂授权代理,海外优势订货渠道。可提供大量库存,详
UTC/友顺
20+
TO-220F
32500
现货很近!原厂很远!只做原装
UTC(友顺)
24+/25+
TO-220F
50
UTC原厂一级代理商,价格优势!
UTC/友顺
2022+
TO-220
32500
原厂代理 终端免费提供样品
26+
N/A
47000
一级代理-主营优势-实惠价格-不悔选择
UTC/友顺
2023+
TO-252
50000
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