TMOS POWER FET 4.0 AMPERES 800 VOLTS RDS(on) = 3.0 OHM

TMOS E-FET™ Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 4.0 AMPERES 800 VOLTS RDS(on)= 3.0 OHM This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time. In a

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 4A@ TC=25℃ ·Drain Source Voltage -VDSS= 800V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 3Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

TMOS E-FET™ Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate

Trans MOSFET N-CH 800V 4A 3-Pin(3+Tab) TO-220

N-Channel Enhancement-Mode Silicon Gate

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TMOS POWER FET 4.0 AMPERES 800 VOLTS RDS(on) = 3.0 OHM

TMOS E-FET™ Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 4.0 AMPERES 800 VOLTS RDS(on)= 3.0 OHM This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time. In a

800V N-Channel MOSFET

Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high av

800V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are product using Fairchilds proprietary, planar stripe, DMOS technology. This advance technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstan

TMOS POWER FET 4.0 AMPERES 800 VOLTS

TMOS E-FET High Energy Power FET D2PAK for Surface Mount N–Channel Enhancement–Mode Silicon Gate The D2PAK package has the capability of housing a larger die than any existing surface mount package which allows it to be used in applications that require the use of surface mount components with h