800V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are product using Fairchilds proprietary, planar stripe, DMOS technology. This advance technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstan

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=3.9A@ TC=25℃ ·Drain Source Voltage -VDSS=800V(Min) ·Static Drain-Source On-Resistance -RDS(on) =3.6Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

功率 MOSFET，N 沟道，QFET®，800 V，3.9 A，3.6 Ω，TO-220

4.0 Amps, 800 Volts N-CHANNEL POWER MOSFET

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N-Channel Power MOSFET

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Fast Switching Speed

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4.0A, 800V N-CHANNEL POWER MOSFET

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isc N-Channel MOSFET Transistor

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