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MTP4N80

TMOS POWER FET 4.0 AMPERES 800 VOLTS RDS(on) = 3.0 OHM

TMOS E-FET™ Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 4.0 AMPERES 800 VOLTS RDS(on)= 3.0 OHM This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time. In a

MOTOROLA

摩托罗拉

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 4A@ TC=25℃ ·Drain Source Voltage -VDSS= 800V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 3Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

ISC

无锡固电

TMOS E-FET™ Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate

ETC

知名厂家

TMOS POWER FET 4.0 AMPERES 800 VOLTS RDS(on) = 3.0 OHM

TMOS E-FET™ Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 4.0 AMPERES 800 VOLTS RDS(on)= 3.0 OHM This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time. In a

MOTOROLA

摩托罗拉

Trans MOSFET N-CH 800V 4A 3-Pin(3+Tab) TO-220

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

N-Channel Enhancement-Mode Silicon Gate

文件:115.01 Kbytes Page:2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

800V N-Channel MOSFET

Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high av

FAIRCHILD

仙童半导体

800V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are product using Fairchilds proprietary, planar stripe, DMOS technology. This advance technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstan

FAIRCHILD

仙童半导体

TMOS POWER FET 4.0 AMPERES 800 VOLTS

TMOS E-FET High Energy Power FET D2PAK for Surface Mount N–Channel Enhancement–Mode Silicon Gate The D2PAK package has the capability of housing a larger die than any existing surface mount package which allows it to be used in applications that require the use of surface mount components with h

MOTOROLA

摩托罗拉

MTP4N80产品属性

  • 类型

    描述

  • Channel Mode:

    Enhancement

  • Channel Type:

    N

  • Configuration:

    Single

  • Material:

    Si

  • Maximum Continuous Drain Current:

    4A

  • Maximum Drain Source Voltage:

    800V

  • Maximum Gate Source Voltage:

    ±20V

  • Maximum Operating Temperature:

    150°C

  • Maximum Power Dissipation:

    125000mW

  • Minimum Operating Temperature:

    -55°C

  • Number of Elements per Chip:

    1

更新时间:2026-7-24 9:17:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
MOT
05+
TO-220
3800
全新原装 绝对有货
ON
26+
TO-220
6893
代理全系列销售, 全新原装正品,价格优势,长期供应,量大可订
ON/安森美
22+
TO-220
98601
ON
23+
TO-220
11846
一级代理商现货批发,原装正品,假一罚十
ON
24+
136
ON/安森美
23+
TO-TO-220
15500
原厂授权一级代理,专业海外优势订货,价格优势、品种
ON/安森美
2022+
TO220
12888
原厂代理 终端免费提供样品
ON/安森美
23+
TO220
50000
全新原装正品现货,支持订货

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