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3SK29价格

参考价格:¥1.0400

型号:3SK291 品牌:TOSHIBA 备注:这里有3SK29多少钱,2026年最近7天走势,今日出价,今日竞价,3SK29批发/采购报价,3SK29行情走势销售排行榜,3SK29报价。
型号 功能描述 生产厂家 企业 LOGO 操作

Silicon N-Channel Dual Gate MOS FET

Features • Low noise figure. NF = 2.3 dB Typ. at f = 900 MHz • High gain. PG = 19.3 dB Typ. at f = 900 MHz Application UHF RF amplifier

HITACHIHitachi Semiconductor

日立日立公司

N CHANNEL DUAL GATE MOS TYPE (TV TUNER, UHF RF AMPLIFIER APPLICATIONS)

TV Tuner, UHF RF Amplifier Applications • Superior cross modulation performance • Low reverse transfer capacitance: Crss = 0.016 pF (typ.) • Low noise figure: NF = 1.5dB (typ.)

TOSHIBA

东芝

丝印代码:UF;Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBA

东芝

TV TUNER, UHF RF AMPLIFER APPLICATIONS

TV TUNER, UHF RF AMPLIFIER APPLICATIONS • Superior Cross Modulation Performance • Low Reverse Transfer Capacitance: Crss = 0.016 pF (Typ.) • Low Noise Figure: NF = 1.5dB (Typ.)

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

High frequency MOSFET

Application Scope:TV UHF high frequency amplifier\nPolarity:N-ch\nRoHS Compatible Product(s) (#):Available\nAssembly bases:日本 Drain current ID 0.03 A \nPower Dissipation PD 0.15 W \nDrain-Source voltage VDSS 12.5 V ;

TOSHIBA

东芝

High frequency MOSFET

Application Scope:TV VHF/UHF high frequency amplifier\nPolarity:N-ch\nRoHS Compatible Product(s) (#):Available\nAssembly bases:日本 Drain current ID 0.03 A \nPower Dissipation PD 0.15 W \nDrain-Source voltage VDSS 12.5 V ;

TOSHIBA

东芝

N CHANNEL DUAL GATE MOS TYPE (TV TUNER, VHF RF AMPLIFIER APPLICATIONS)

TV Tuner, VHF RF Amplifier Application • Superior cross modulation performance. • Low reverse transfer capacitance: Crss= 20 fF (typ.) • Low noise figure: NF = 1.4dB (typ.)

TOSHIBA

东芝

丝印代码:UV;Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBA

东芝

丝印代码:UF;Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBA

东芝

N CHANNEL DUAL GATE MOS TYPE (TV TUNER, UHF RF AMPLIFIER APPLICAITONS)

TOSHIBA

东芝

High frequency MOSFET

Application Scope:TV UHF high frequency amplifier\nPolarity:N-ch\nRoHS Compatible Product(s) (#):Available\nAssembly bases:日本 Drain current ID 0.03 A \nPower Dissipation PD 0.1 W \nDrain-Source voltage VDSS 12.5 V ;

TOSHIBA

东芝

N CHANNEL DUAL GATE MOS TYPE (TV TUNER, VHF RF AMPLIFIER APPLICATIONS)

TV Tuner, VHF RF Amplifier Application • Superior cross modulation performance • Low reverse transfer capacitance: Crss = 20 fF (typ.) • Low noise figure: NF = 1.4dB (typ.)

TOSHIBA

东芝

丝印代码:UV;Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBA

东芝

Silicon N-Channel Dual Gate MOS FET

Features • Low noise figure. NF = 2.0 dB typ. at f = 900 MHz • Capable of low voltage operation Application UHF RF amplifier

HITACHIHitachi Semiconductor

日立日立公司

Silicon N-Channel Dual Gate MOS FET

Features • Low noise figure. NF = 2.0 dB typ. at f = 900 MHz • Capable of low voltage operation Application • UHF RF amplifier

RENESAS

瑞萨

Silicon N-Channel Dual Gate MOS FET

Features • Low noise figure. NF = 2.0 dB typ. at f = 900 MHz • Capable of low voltage operation Application • UHF RF amplifier

RENESAS

瑞萨

Silicon N-Channel Dual Gate MOS FET

Features • Low noise figure. NF = 2.0 dB Typ. at f = 900 MHz • Capable of low voltage operation Application UHF RF amplifier

RENESAS

瑞萨

Silicon N-Channel Dual Gate MOS FET

Features • Low noise figure. NF = 2.0 dB Typ. at f = 900 MHz • Capable of low voltage operation Application UHF RF amplifier

HITACHIHitachi Semiconductor

日立日立公司

Silicon N-Channel Dual Gate MOS FET

Features • Low noise figure. NF = 2.0 dB Typ. at f = 900 MHz • Capable of low voltage operation Application UHF RF amplifier

RENESAS

瑞萨

Silicon N-Channel Dual Gate MOS FET

Features • Low noise figure. NF = 1.0 dB typ. at f = 200 MHz • Capable of low voltage operation Application UHF / VHF RF amplifier

RENESAS

瑞萨

Silicon N-Channel Dual Gate MOS FET

Features • Low noise figure. NF = 1.0 dB typ. at f = 200 MHz • Capable of low voltage operation Application UHF / VHF RF amplifier

HITACHIHitachi Semiconductor

日立日立公司

Silicon N-Channel Dual Gate MOS FET

Features • Low noise figure. NF = 1.0 dB typ. at f = 200 MHz • Capable of low voltage operation Application UHF / VHF RF amplifier

RENESAS

瑞萨

Silicon N-Channel Dual Gate MOS FET

Features • Low noise figure. NF = 1.0 dB typ. at f = 200 MHz • Capable of low voltage operation Application UHF / VHF RF amplifier

RENESAS

瑞萨

Silicon N-Channel Dual Gate MOS FET

Features • Low noise figure. NF = 1.0 dB typ. at f = 200 MHz • Capable of low voltage operation Application UHF / VHF RF amplifier

HITACHIHitachi Semiconductor

日立日立公司

Silicon N-Channel Dual Gate MOS FET

Features • Low noise figure. NF = 1.0 dB typ. at f = 200 MHz • Capable of low voltage operation Application UHF / VHF RF amplifier

RENESAS

瑞萨

丝印代码:U71;MES FIELD EFFECT TRANSISTOR

RF AMP. FOR UHF TV TUNER N-CHANNEL GaAs DUAL-GATE MES FIFLD-EFFECT TRANSISTOR 4 PIN SMALL MINI MOLD FEATURES • Suitable for use as RF amplifier in UHF TV tuner. • Low Crss : 0.02 pF TYP. • High GPS : 20 dB TYP. • Low NF : 1.1 dB TYP. • 4 PIN SMALL MINI MOLD PACKAGE

RENESAS

瑞萨

RF AMP. FOR UHF TV TUNER N-CHANNEL GaAs DUAL-GATE MES FIFLD-EFFECT TRANSISTOR 4 PIN SMALL MINI MOLD

MES FIELD EFFECT TRANSISTOR FEATURES • Suitable for use as RF amplifier in UHF TV tuner. • Low Crss : 0.02 pF TYP. • High GPS : 20 dB TYP. • Low NF : 1.1 dB TYP. • 4 PIN SMALL MINI MOLD PACKAGE

NEC

瑞萨

TV Tuner, UHF RF Amplifier Applications

文件:744.16 Kbytes Page:6 Pages

TOSHIBA

东芝

TV Tuner, UHF RF Amplifier Applications

文件:744.16 Kbytes Page:6 Pages

TOSHIBA

东芝

TV Tuner, VHF RF Amplifier Application

文件:543.52 Kbytes Page:5 Pages

TOSHIBA

东芝

封装/外壳:SC-61AA 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:MOSFET N-CH 12.5 30MA SMQ 分立半导体产品 晶体管 - FET,MOSFET - 射频

ETC

知名厂家

TV Tuner, VHF RF Amplifier Application

文件:543.52 Kbytes Page:5 Pages

TOSHIBA

东芝

封装/外壳:SC-82A,SOT-343 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:FET RF 12.5V 800MHZ USQ 分立半导体产品 晶体管 - FET,MOSFET - 射频

ETC

知名厂家

TV Tuner, VHF RF Amplifier Application

文件:523.289 Kbytes Page:5 Pages

TOSHIBA

东芝

TV Tuner, VHF RF Amplifier Application

文件:523.289 Kbytes Page:5 Pages

TOSHIBA

东芝

3SK29产品属性

  • 类型

    描述

  • Application Scope:

    TV UHF high frequency amplifier

  • ID (Max)(A):

    0.03

  • PD (Max)(W):

    0.15

  • Number of pins:

    4

  • Surface mount package:

    Y

  • Package name(Toshiba):

    SMQ

  • Width×Length×Height(mm):

    2.9 x 2.9 x 1.1

  • Package Size(mm^2):

    8.41

更新时间:2026-7-29 15:23:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
RENESAS
26+
SOT143
360000
进口原装现货
HITACHI
24+
SOT143
80000
只做自己库存 全新原装进口正品假一赔百 可开13%增
RENESA
16+
SOT-143
10000
进口原装现货/价格优势!
RENESAS/瑞萨
2019+
SOT-143
78550
原厂渠道 可含税出货
HITACHI
05+
原厂原装
6051
只做全新原装真实现货供应
RENESAS/瑞萨
2025+
SOT-143
5000
原装进口价格优 请找坤融电子!
RENESAS
23+
SOT143
7600
专注配单,只做原装进口现货
RENESAS
22+
SOT143
20000
公司只有原装 品质保证
RENESAS
25+
SOT143
20000
公司现货
NEC
25+23+
SOT-143
42176
绝对原装正品现货,全新深圳原装进口现货

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