3SK292技术资料参数东芝原装现货专卖TOSHIBA-IC资料网

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3SK29价格

参考价格：￥1.0400

型号：3SK291 品牌：TOSHIBA 备注：这里有3SK29多少钱，2025年最近7天走势，今日出价，今日竞价，3SK29批发/采购报价，3SK29行情走势销售排行榜，3SK29报价。

型号	功能描述	生产厂家&企业	LOGO
3SK290	Silicon N-Channel Dual Gate MOS FET Features • Low noise figure. NF = 2.3 dB Typ. at f = 900 MHz • High gain. PG = 19.3 dB Typ. at f = 900 MHz Application UHF RF amplifier	HitachiHitachi Semiconductor 日立日立公司	Hitachi
3SK291	N CHANNEL DUAL GATE MOS TYPE (TV TUNER, UHF RF AMPLIFIER APPLICATIONS) TV Tuner, UHF RF Amplifier Applications • Superior cross modulation performance • Low reverse transfer capacitance: Crss = 0.016 pF (typ.) • Low noise figure: NF = 1.5dB (typ.)	TOSHIBA 东芝	TOSHIBA
3SK291	TV TUNER, UHF RF AMPLIFER APPLICATIONS TV TUNER, UHF RF AMPLIFIER APPLICATIONS • Superior Cross Modulation Performance • Low Reverse Transfer Capacitance: Crss = 0.016 pF (Typ.) • Low Noise Figure: NF = 1.5dB (Typ.)	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司	NJSEMI
3SK291	Bipolar Small-Signal Transistors MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf	TOSHIBA 东芝	TOSHIBA
3SK292	Bipolar Small-Signal Transistors MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf	TOSHIBA 东芝	TOSHIBA
3SK292	N CHANNEL DUAL GATE MOS TYPE (TV TUNER, VHF RF AMPLIFIER APPLICATIONS) TV Tuner, VHF RF Amplifier Application • Superior cross modulation performance. • Low reverse transfer capacitance: Crss= 20 fF (typ.) • Low noise figure: NF = 1.4dB (typ.)	TOSHIBA 东芝	TOSHIBA
3SK293	N CHANNEL DUAL GATE MOS TYPE (TV TUNER, UHF RF AMPLIFIER APPLICAITONS)	TOSHIBA 东芝	TOSHIBA
3SK293	Bipolar Small-Signal Transistors MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf	TOSHIBA 东芝	TOSHIBA
3SK294	Bipolar Small-Signal Transistors MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf	TOSHIBA 东芝	TOSHIBA
3SK294	N CHANNEL DUAL GATE MOS TYPE (TV TUNER, VHF RF AMPLIFIER APPLICATIONS) TV Tuner, VHF RF Amplifier Application • Superior cross modulation performance • Low reverse transfer capacitance: Crss = 20 fF (typ.) • Low noise figure: NF = 1.4dB (typ.)	TOSHIBA 东芝	TOSHIBA
3SK295	Silicon N-Channel Dual Gate MOS FET Features • Low noise figure. NF = 2.0 dB typ. at f = 900 MHz • Capable of low voltage operation Application UHF RF amplifier	HitachiHitachi Semiconductor 日立日立公司	Hitachi
3SK295	Silicon N-Channel Dual Gate MOS FET Features • Low noise figure. NF = 2.0 dB typ. at f = 900 MHz • Capable of low voltage operation Application • UHF RF amplifier	RENESAS 瑞萨	RENESAS
3SK295ZQ-TL-E	Silicon N-Channel Dual Gate MOS FET Features • Low noise figure. NF = 2.0 dB typ. at f = 900 MHz • Capable of low voltage operation Application • UHF RF amplifier	RENESAS 瑞萨	RENESAS
3SK296	Silicon N-Channel Dual Gate MOS FET Features • Low noise figure. NF = 2.0 dB Typ. at f = 900 MHz • Capable of low voltage operation Application UHF RF amplifier	HitachiHitachi Semiconductor 日立日立公司	Hitachi
3SK296	Silicon N-Channel Dual Gate MOS FET Features • Low noise figure. NF = 2.0 dB Typ. at f = 900 MHz • Capable of low voltage operation Application UHF RF amplifier	RENESAS 瑞萨	RENESAS
3SK296ZQ-TL-E	Silicon N-Channel Dual Gate MOS FET Features • Low noise figure. NF = 2.0 dB Typ. at f = 900 MHz • Capable of low voltage operation Application UHF RF amplifier	RENESAS 瑞萨	RENESAS
3SK297	Silicon N-Channel Dual Gate MOS FET Features • Low noise figure. NF = 1.0 dB typ. at f = 200 MHz • Capable of low voltage operation Application UHF / VHF RF amplifier	HitachiHitachi Semiconductor 日立日立公司	Hitachi
3SK297	Silicon N-Channel Dual Gate MOS FET Features • Low noise figure. NF = 1.0 dB typ. at f = 200 MHz • Capable of low voltage operation Application UHF / VHF RF amplifier	RENESAS 瑞萨	RENESAS
3SK297ZP-TL-E	Silicon N-Channel Dual Gate MOS FET Features • Low noise figure. NF = 1.0 dB typ. at f = 200 MHz • Capable of low voltage operation Application UHF / VHF RF amplifier	RENESAS 瑞萨	RENESAS
3SK298	Silicon N-Channel Dual Gate MOS FET Features • Low noise figure. NF = 1.0 dB typ. at f = 200 MHz • Capable of low voltage operation Application UHF / VHF RF amplifier	HitachiHitachi Semiconductor 日立日立公司	Hitachi
3SK298	Silicon N-Channel Dual Gate MOS FET Features • Low noise figure. NF = 1.0 dB typ. at f = 200 MHz • Capable of low voltage operation Application UHF / VHF RF amplifier	RENESAS 瑞萨	RENESAS
3SK298ZP-TL-E	Silicon N-Channel Dual Gate MOS FET Features • Low noise figure. NF = 1.0 dB typ. at f = 200 MHz • Capable of low voltage operation Application UHF / VHF RF amplifier	RENESAS 瑞萨	RENESAS
3SK299	RF AMP. FOR UHF TV TUNER N-CHANNEL GaAs DUAL-GATE MES FIFLD-EFFECT TRANSISTOR 4 PIN SMALL MINI MOLD MES FIELD EFFECT TRANSISTOR FEATURES • Suitable for use as RF amplifier in UHF TV tuner. • Low Crss : 0.02 pF TYP. • High GPS : 20 dB TYP. • Low NF : 1.1 dB TYP. • 4 PIN SMALL MINI MOLD PACKAGE	NEC 瑞萨	NEC
3SK299	MES FIELD EFFECT TRANSISTOR RF AMP. FOR UHF TV TUNER N-CHANNEL GaAs DUAL-GATE MES FIFLD-EFFECT TRANSISTOR 4 PIN SMALL MINI MOLD FEATURES • Suitable for use as RF amplifier in UHF TV tuner. • Low Crss : 0.02 pF TYP. • High GPS : 20 dB TYP. • Low NF : 1.1 dB TYP. • 4 PIN SMALL MINI MOLD PACKAGE	RENESAS 瑞萨	RENESAS
3SK291	TV Tuner, UHF RF Amplifier Applications 文件：744.16 Kbytes Page：6 Pages	TOSHIBA 东芝	TOSHIBA
3SK291_07	TV Tuner, UHF RF Amplifier Applications 文件：744.16 Kbytes Page：6 Pages	TOSHIBA 东芝	TOSHIBA
3SK292	TV Tuner, VHF RF Amplifier Application 文件：543.52 Kbytes Page：5 Pages	TOSHIBA 东芝	TOSHIBA
3SK292(TE85R,F)	封装/外壳：SC-61AA 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带描述：MOSFET N-CH 12.5 30MA SMQ 分立半导体产品晶体管 - FET，MOSFET - 射频	ETC 知名厂家	ETC
3SK292_07	TV Tuner, VHF RF Amplifier Application 文件：543.52 Kbytes Page：5 Pages	TOSHIBA 东芝	TOSHIBA
3SK293(TE85L,F)	封装/外壳：SC-82A，SOT-343 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带描述：FET RF 12.5V 800MHZ USQ 分立半导体产品晶体管 - FET，MOSFET - 射频	ETC 知名厂家	ETC
3SK294	TV Tuner, VHF RF Amplifier Application 文件：523.289 Kbytes Page：5 Pages	TOSHIBA 东芝	TOSHIBA
3SK294_07	TV Tuner, VHF RF Amplifier Application 文件：523.289 Kbytes Page：5 Pages	TOSHIBA 东芝	TOSHIBA

3SK29产品属性

类型
描述
型号
3SK29
制造商
HITACHI
制造商全称
Hitachi Semiconductor
功能描述
Silicon N-Channel Dual Gate MOS FET

3SK29供应商更多...

更新时间：2025-8-10 15:01:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市创新迹电子有限公司	3SK292(TE85R,F)	TOSHIBA	23+	SMQ-4	7000	专注配单,只做原装进口现货	询价
艾睿（深圳）半导体有限公司	3SK293	TOSHIBA/东芝	2447	SOT343	100500	一级代理专营品牌!原装正品,优势现货,长期排单到货	询价
深圳市一线半导体有限公司	3SK292	TOSHIBA	24+	SOT-143SOT-23-4	57200	新进库存/原装	询价
深圳兆威电子有限公司	3SK292	TOSHIBA	23+	SOT-143	63000	原装正品现货	询价
深圳市凌旭科技有限公司	3SK293	TOSHIBA	21+	SOT343	3000	只做原装正品,不止网上数量,欢迎电话微信查询!	询价
深圳市纳艾斯科技有限公司	3SK292	TOSHIBA	24+	SOT143	80000	只做自己库存全新原装进口正品假一赔百可开13%增	询价
中天科工半导体（深圳）有限公司	3SK292	TOSHIBA/东芝	25+	SOT143	20300	TOSHIBA/东芝原装特价3SK292即刻询购立享优惠#长期有货	询价
深圳市威雅利发展有限公司	3SK293	TOSHIBA/假货赔房	1521+	SOT-343	370	一级代理,专注军工、汽车、医疗、工业、新能源、电力	询价
深圳市芯纬度科技有限公司	3SK292	Toshiba	22+	DNA	1200000	公司现货,有挂就有货。	询价
深圳市汇莱威科技有限公司	3SK292	TOS	2024	SOT23	13500	16余年资质绝对原盒原盘代理渠道更多数量	询价

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3SK29价格

3SK29产品属性

3SK29供应商更多...

3SK29芯片相关品牌

3SK29规格书下载地址

3SK29参数引脚图相关

3SK29数据表相关新闻

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DdatasheetPDF页码索引