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3SK29价格

参考价格：￥1.0400

型号：3SK291 品牌：TOSHIBA 备注：这里有3SK29多少钱，2025年最近7天走势，今日出价，今日竞价，3SK29批发/采购报价，3SK29行情走势销售排行榜，3SK29报价。

型号	功能描述	生产厂家企业	LOGO
3SK290	Silicon N-Channel Dual Gate MOS FET Features • Low noise figure. NF = 2.3 dB Typ. at f = 900 MHz • High gain. PG = 19.3 dB Typ. at f = 900 MHz Application UHF RF amplifier	HitachiHitachi Semiconductor 日立日立公司	Hitachi
3SK291	N CHANNEL DUAL GATE MOS TYPE (TV TUNER, UHF RF AMPLIFIER APPLICATIONS) TV Tuner, UHF RF Amplifier Applications • Superior cross modulation performance • Low reverse transfer capacitance: Crss = 0.016 pF (typ.) • Low noise figure: NF = 1.5dB (typ.)	TOSHIBA 东芝	TOSHIBA
3SK291	Bipolar Small-Signal Transistors MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf	TOSHIBA 东芝	TOSHIBA
3SK291	TV TUNER, UHF RF AMPLIFER APPLICATIONS TV TUNER, UHF RF AMPLIFIER APPLICATIONS • Superior Cross Modulation Performance • Low Reverse Transfer Capacitance: Crss = 0.016 pF (Typ.) • Low Noise Figure: NF = 1.5dB (Typ.)	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司	NJSEMI
3SK292	Bipolar Small-Signal Transistors MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf	TOSHIBA 东芝	TOSHIBA
3SK292	N CHANNEL DUAL GATE MOS TYPE (TV TUNER, VHF RF AMPLIFIER APPLICATIONS) TV Tuner, VHF RF Amplifier Application • Superior cross modulation performance. • Low reverse transfer capacitance: Crss= 20 fF (typ.) • Low noise figure: NF = 1.4dB (typ.)	TOSHIBA 东芝	TOSHIBA
3SK293	N CHANNEL DUAL GATE MOS TYPE (TV TUNER, UHF RF AMPLIFIER APPLICAITONS)	TOSHIBA 东芝	TOSHIBA
3SK293	Bipolar Small-Signal Transistors MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf	TOSHIBA 东芝	TOSHIBA
3SK294	Bipolar Small-Signal Transistors MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf	TOSHIBA 东芝	TOSHIBA
3SK294	N CHANNEL DUAL GATE MOS TYPE (TV TUNER, VHF RF AMPLIFIER APPLICATIONS) TV Tuner, VHF RF Amplifier Application • Superior cross modulation performance • Low reverse transfer capacitance: Crss = 20 fF (typ.) • Low noise figure: NF = 1.4dB (typ.)	TOSHIBA 东芝	TOSHIBA
3SK295	Silicon N-Channel Dual Gate MOS FET Features • Low noise figure. NF = 2.0 dB typ. at f = 900 MHz • Capable of low voltage operation Application UHF RF amplifier	HitachiHitachi Semiconductor 日立日立公司	Hitachi
3SK295	Silicon N-Channel Dual Gate MOS FET Features • Low noise figure. NF = 2.0 dB typ. at f = 900 MHz • Capable of low voltage operation Application • UHF RF amplifier	RENESAS 瑞萨	RENESAS
3SK295ZQ-TL-E	Silicon N-Channel Dual Gate MOS FET Features • Low noise figure. NF = 2.0 dB typ. at f = 900 MHz • Capable of low voltage operation Application • UHF RF amplifier	RENESAS 瑞萨	RENESAS
3SK296	Silicon N-Channel Dual Gate MOS FET Features • Low noise figure. NF = 2.0 dB Typ. at f = 900 MHz • Capable of low voltage operation Application UHF RF amplifier	RENESAS 瑞萨	RENESAS
3SK296	Silicon N-Channel Dual Gate MOS FET Features • Low noise figure. NF = 2.0 dB Typ. at f = 900 MHz • Capable of low voltage operation Application UHF RF amplifier	HitachiHitachi Semiconductor 日立日立公司	Hitachi
3SK296ZQ-TL-E	Silicon N-Channel Dual Gate MOS FET Features • Low noise figure. NF = 2.0 dB Typ. at f = 900 MHz • Capable of low voltage operation Application UHF RF amplifier	RENESAS 瑞萨	RENESAS
3SK297	Silicon N-Channel Dual Gate MOS FET Features • Low noise figure. NF = 1.0 dB typ. at f = 200 MHz • Capable of low voltage operation Application UHF / VHF RF amplifier	RENESAS 瑞萨	RENESAS
3SK297	Silicon N-Channel Dual Gate MOS FET Features • Low noise figure. NF = 1.0 dB typ. at f = 200 MHz • Capable of low voltage operation Application UHF / VHF RF amplifier	HitachiHitachi Semiconductor 日立日立公司	Hitachi
3SK297ZP-TL-E	Silicon N-Channel Dual Gate MOS FET Features • Low noise figure. NF = 1.0 dB typ. at f = 200 MHz • Capable of low voltage operation Application UHF / VHF RF amplifier	RENESAS 瑞萨	RENESAS
3SK298	Silicon N-Channel Dual Gate MOS FET Features • Low noise figure. NF = 1.0 dB typ. at f = 200 MHz • Capable of low voltage operation Application UHF / VHF RF amplifier	RENESAS 瑞萨	RENESAS
3SK298	Silicon N-Channel Dual Gate MOS FET Features • Low noise figure. NF = 1.0 dB typ. at f = 200 MHz • Capable of low voltage operation Application UHF / VHF RF amplifier	HitachiHitachi Semiconductor 日立日立公司	Hitachi
3SK298ZP-TL-E	Silicon N-Channel Dual Gate MOS FET Features • Low noise figure. NF = 1.0 dB typ. at f = 200 MHz • Capable of low voltage operation Application UHF / VHF RF amplifier	RENESAS 瑞萨	RENESAS
3SK299	MES FIELD EFFECT TRANSISTOR RF AMP. FOR UHF TV TUNER N-CHANNEL GaAs DUAL-GATE MES FIFLD-EFFECT TRANSISTOR 4 PIN SMALL MINI MOLD FEATURES • Suitable for use as RF amplifier in UHF TV tuner. • Low Crss : 0.02 pF TYP. • High GPS : 20 dB TYP. • Low NF : 1.1 dB TYP. • 4 PIN SMALL MINI MOLD PACKAGE	RENESAS 瑞萨	RENESAS
3SK299	RF AMP. FOR UHF TV TUNER N-CHANNEL GaAs DUAL-GATE MES FIFLD-EFFECT TRANSISTOR 4 PIN SMALL MINI MOLD MES FIELD EFFECT TRANSISTOR FEATURES • Suitable for use as RF amplifier in UHF TV tuner. • Low Crss : 0.02 pF TYP. • High GPS : 20 dB TYP. • Low NF : 1.1 dB TYP. • 4 PIN SMALL MINI MOLD PACKAGE	NEC 瑞萨	NEC
3SK291	TV Tuner, UHF RF Amplifier Applications 文件：744.16 Kbytes Page：6 Pages	TOSHIBA 东芝	TOSHIBA
3SK291	High frequency MOSFET	TOSHIBA 东芝	TOSHIBA
3SK291_07	TV Tuner, UHF RF Amplifier Applications 文件：744.16 Kbytes Page：6 Pages	TOSHIBA 东芝	TOSHIBA
3SK292	TV Tuner, VHF RF Amplifier Application 文件：543.52 Kbytes Page：5 Pages	TOSHIBA 东芝	TOSHIBA
3SK292	High frequency MOSFET	TOSHIBA 东芝	TOSHIBA
3SK292(TE85R,F)	封装/外壳：SC-61AA 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带描述：MOSFET N-CH 12.5 30MA SMQ 分立半导体产品晶体管 - FET，MOSFET - 射频	ETC 知名厂家	ETC
3SK292_07	TV Tuner, VHF RF Amplifier Application 文件：543.52 Kbytes Page：5 Pages	TOSHIBA 东芝	TOSHIBA
3SK293	High frequency MOSFET	TOSHIBA 东芝	TOSHIBA
3SK293(TE85L,F)	封装/外壳：SC-82A，SOT-343 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带描述：FET RF 12.5V 800MHZ USQ 分立半导体产品晶体管 - FET，MOSFET - 射频	ETC 知名厂家	ETC
3SK294	TV Tuner, VHF RF Amplifier Application 文件：523.289 Kbytes Page：5 Pages	TOSHIBA 东芝	TOSHIBA
3SK294_07	TV Tuner, VHF RF Amplifier Application 文件：523.289 Kbytes Page：5 Pages	TOSHIBA 东芝	TOSHIBA

3SK29产品属性

类型
描述
型号
3SK29
制造商
HITACHI
制造商全称
Hitachi Semiconductor
功能描述
Silicon N-Channel Dual Gate MOS FET

3SK29供应商更多...

更新时间：2025-12-25 12:00:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市盈慧通电子有限公司	3SK295ZQ-TL-E	RENESAS	2511	SOT143	12003	电子元器件采购降本30%!原厂直采,砍掉中间差价	询价
贸泽芯城（深圳）电子科技有限公司	3SK295ZQTL	HITACHI/日立	23+	SOT143	15000	原厂授权代理,海外优势订货渠道。可提供大量库存,详	询价
深圳市高捷芯城科技有限公司	3SK295ZQ-TL-E	RENESAS(瑞萨)/IDT	24+		7350	现货供应,当天可交货!免费送样,原厂技术支持!!!	询价
深圳市得捷芯城科技有限公司	3SK295ZQ-TL-E	RENESAS/瑞萨	24+	NA/	1232	优势代理渠道,原装正品,可全系列订货开增值税票	询价
中天科工半导体（深圳）有限公司	3SK295	RENESAS/瑞萨	25+	SOT-143	20300	RENESAS/瑞萨原装特价3SK295即刻询购立享优惠#长期有货	询价
深圳市纳艾斯科技有限公司	3SK295	HITACHI	24+	SOT143	80000	只做自己库存全新原装进口正品假一赔百可开13%增	询价
现代芯城（深圳）科技有限公司	3SK295ZQ-TL-E		24+	N/A	73000	一级代理-主营优势-实惠价格-不悔选择	询价
深圳市坤融电子科技有限公司	3SK295	RENESAS/瑞萨	2025+	SOT-143	5000	原装进口价格优请找坤融电子!	询价
深圳市莱克讯科技有限公司	3SK295	HITACHI	1922+	SOT143	90000	原装进口现货库存专业工厂研究所配单供货	询价
深圳市安富世纪电子有限公司	3SK295	RENESAS	23+	SOT143	7600	专注配单,只做原装进口现货	询价

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3SK29价格

3SK29产品属性

3SK29供应商更多...

3SK29芯片相关品牌

3SK29规格书下载地址

3SK29参数引脚图相关

3SK29数据表相关新闻

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3peak全新原装特价销售TPF140

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3TB41220XM0西门子

3TB40220XM0西门子电机

DdatasheetPDF页码索引