位置：首页 > IC中文资料第8123页 > 3SK297ZP-TL-E
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
3SK297ZP-TL-E | Silicon N-Channel Dual Gate MOS FET Features • Low noise figure. NF = 1.0 dB typ. at f = 200 MHz • Capable of low voltage operation Application UHF / VHF RF amplifier | RENESAS 瑞萨 |   | |
3SK297ZP-TL-E | Silicon N-Channel Dual Gate MOS FET | RENESAS 瑞萨 | | |
Silicon N-Channel Dual Gate MOS FET Features • Low noise figure. NF = 1.0 dB typ. at f = 200 MHz • Capable of low voltage operation Application UHF / VHF RF amplifier | RENESAS 瑞萨 | | ||
Silicon N-Channel Dual Gate MOS FET Features • Low noise figure. NF = 1.0 dB typ. at f = 200 MHz • Capable of low voltage operation Application UHF / VHF RF amplifier | HITACHIHitachi Semiconductor 日立日立公司 | |
3SK297ZP-TL-E产品属性
- 类型
描述
- 型号
3SK297ZP-TL-E
- 制造商
RENESAS
- 制造商全称
Renesas Technology Corp
- 功能描述
Silicon N-Channel Dual Gate MOS FET
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
HITACHI |
24+ |
SOT343 |
80000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
|||
HITACHI/日立 |
24+ |
NA |
990000 |
明嘉莱只做原装正品现货 |
|||
RENESAS |
24+ |
SOT343 |
20000 |
全新原厂原装，进口正品现货，正规渠道可含税！！ |
|||
SMD |
23+ |
NA |
15659 |
振宏微专业只做正品,假一罚百! |
|||
RENESAS |
25+ |
SOT343 |
3200 |
全新原装、诚信经营、公司现货销售 |
|||
RENESAS瑞萨/HITACHI日立 |
24+ |
SOT-143SOT-23-4 |
7203 |
新进库存/原装 |
|||
HITACHI |
06+ |
SOT-143 |
857 |
||||
HIT |
23+ |
SOT343 |
30000 |
原装正品,假一罚十 |
|||
HITACHI |
18+ |
SOT343 |
85600 |
保证进口原装可开17%增值税发票 |
|||
RENESAS |
22+ |
SOT143 |
20000 |
公司只有原装 品质保证 |
3SK297ZP-TL-E芯片相关品牌
3SK297ZP-TL-E规格书下载地址
3SK297ZP-TL-E参数引脚图相关
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