位置：首页 > IC中文资料第8123页 > 3SK298ZP-TL-E
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
3SK298ZP-TL-E | Silicon N-Channel Dual Gate MOS FET Features • Low noise figure. NF = 1.0 dB typ. at f = 200 MHz • Capable of low voltage operation Application UHF / VHF RF amplifier | RENESAS 瑞萨 |   | |
Silicon N-Channel Dual Gate MOS FET Features • Low noise figure. NF = 1.0 dB typ. at f = 200 MHz • Capable of low voltage operation Application UHF / VHF RF amplifier | RENESAS 瑞萨 | | ||
Silicon N-Channel Dual Gate MOS FET Features • Low noise figure. NF = 1.0 dB typ. at f = 200 MHz • Capable of low voltage operation Application UHF / VHF RF amplifier | HitachiHitachi Semiconductor 日立日立公司 | |
3SK298ZP-TL-E产品属性
- 类型
描述
- 型号
3SK298ZP-TL-E
- 制造商
RENESAS
- 制造商全称
Renesas Technology Corp
- 功能描述
Silicon N-Channel Dual Gate MOS FET
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
RENESAS/瑞萨 |
24+ |
NA/ |
6551 |
原装现货,当天可交货,原型号开票 |
|||
RENESAS(瑞萨)/IDT |
24+ |
7350 |
现货供应,当天可交货!免费送样,原厂技术支持!!! |
||||
TI |
23+ |
TSSOP |
3477 |
全新原装假一赔十 |
|||
RENESAS/瑞萨 |
24+ |
SOT-343 |
880000 |
明嘉莱只做原装正品现货 |
|||
RENESAS |
2016+ |
SOT343 |
8020 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
RENESAS/瑞萨 |
25+ |
SOT343 |
12620 |
RENESAS/瑞萨原装特价3SK298ZP-TL-E即刻询购立享优惠#长期有货 |
|||
RENESAS |
21+ |
SOT23 |
13721 |
原装现货假一赔十 |
|||
SOT-343 |
23+ |
NA |
15659 |
振宏微专业只做正品,假一罚百! |
|||
RENESAS/瑞萨 |
22+ |
SOT343 |
25000 |
只有原装原装,支持BOM配单 |
|||
RENESAS瑞萨/HITACHI日立 |
24+ |
SOT-353SOT-323-5 |
9200 |
新进库存/原装 |
3SK298ZP-TL-E芯片相关品牌
3SK298ZP-TL-E规格书下载地址
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