位置：首页 > IC中文资料第8123页 > 3SK298ZP-TL-E
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
3SK298ZP-TL-E | Silicon N-Channel Dual Gate MOS FET Features • Low noise figure. NF = 1.0 dB typ. at f = 200 MHz • Capable of low voltage operation Application UHF / VHF RF amplifier | RENESAS 瑞萨 |   | |
3SK298ZP-TL-E | Silicon N-Channel Dual Gate MOS FET • Low noise figure.\n NF = 1.0 dB typ. at f = 200 MHz\n• Capable of low voltage operationApplication\n UHF / VHF RF amplifier; | RENESAS 瑞萨 | | |
Silicon N-Channel Dual Gate MOS FET Features • Low noise figure. NF = 1.0 dB typ. at f = 200 MHz • Capable of low voltage operation Application UHF / VHF RF amplifier | HITACHIHitachi Semiconductor 日立日立公司 | | ||
Silicon N-Channel Dual Gate MOS FET Features • Low noise figure. NF = 1.0 dB typ. at f = 200 MHz • Capable of low voltage operation Application UHF / VHF RF amplifier | RENESAS 瑞萨 | |
3SK298ZP-TL-E产品属性
- 类型
描述
- 型号
3SK298ZP-TL-E
- 制造商
RENESAS
- 制造商全称
Renesas Technology Corp
- 功能描述
Silicon N-Channel Dual Gate MOS FET
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
RENESAS |
2016+ |
SOT343 |
8020 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
RENESAS |
2450+ |
SOT343 |
9850 |
只做原厂原装正品现货或订货假一赔十! |
|||
SOT-343 |
25+ |
NA |
15659 |
振宏微专业只做正品,假一罚百! |
|||
RENESAS瑞萨/HITACHI日立 |
24+ |
SOT-353SOT-323-5 |
9200 |
新进库存/原装 |
|||
RENESAS |
25+ |
SOT343 |
8000 |
只有原装 |
|||
RENESAS |
07+ |
SOT343 |
3015 |
全新 发货1-2天 |
|||
RENESAS |
24+ |
SOT343 |
5000 |
全新原装正品,现货销售 |
|||
RENESAS |
26+ |
SOT23 |
360000 |
进口原装现货 |
|||
RENESAS |
24+ |
SOT343 |
8000 |
新到现货，只做全新原装正品 |
|||
RENESAS |
25+ |
SOT23 |
20000 |
原装 |
3SK298ZP-TL-E规格书下载地址
3SK298ZP-TL-E参数引脚图相关
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DdatasheetPDF页码索引
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