1200V N-Channel MOSFET

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NPN/PNP DUAL EMITTER CHOPPER BI-POLAR TRANSISTORS

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丝印代码：3N12030；MOSFET OptiMOSTM3 Power-Transistor, 120 V

Features • N-channel, normal level • Very low on-resistance RDS(on) • Excellent gate charge x RDS(on) product (FOM) • 100 avalanche tested • Optimized for motor drives and battery powered applications. • Optimized for top side cooling. • Ideal for battery management switch application • Su

3.0A, 1200V N-CHANNEL POWER MOSFET

 DESCRIPTION The UTC 3N120-E3 provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.  FEATURES0 * RDS(ON) ≤ 7.0 Ω @ VGS=10V, ID=1.5A * Low Reverse Transfer Capacitance * Fast Switching Ca

3.0A, 1200V N-CHANNEL POWER MOSFET

 DESCRIPTION The UTC 3N120-E3 provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.  FEATURES0 * RDS(ON) ≤ 7.0 Ω @ VGS=10V, ID=1.5A * Low Reverse Transfer Capacitance * Fast Switching Ca

3.0A, 1200V N-CHANNEL POWER MOSFET

 DESCRIPTION The UTC 3N120-E3 provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.  FEATURES0 * RDS(ON) ≤ 7.0 Ω @ VGS=10V, ID=1.5A * Low Reverse Transfer Capacitance * Fast Switching Ca

3.0A, 1200V N-CHANNEL POWER MOSFET

 DESCRIPTION The UTC 3N120-E3 provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.  FEATURES0 * RDS(ON) ≤ 7.0 Ω @ VGS=10V, ID=1.5A * Low Reverse Transfer Capacitance * Fast Switching Ca

3.0A, 1200V N-CHANNEL POWER MOSFET

 DESCRIPTION The UTC 3N120-E3 provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.  FEATURES0 * RDS(ON) ≤ 7.0 Ω @ VGS=10V, ID=1.5A * Low Reverse Transfer Capacitance * Fast Switching Ca

Planar Power MOSFET  (N-CH)

High Voltage Power MOSFETs

Features ● International standard packages ● Low RDS (on) ● Rated for unclamped Inductive load Switching (UIS) ● Molding epoxies meet UL 94 V-0 flammability classification Advantages ● Easy to mount ● Space savings ● High power density

High Voltage Power MOSFETs

Features ● International standard packages ● Low RDS (on) ● Rated for unclamped Inductive load Switching (UIS) ● Molding epoxies meet UL 94 V-0 flammability classification Advantages ● Easy to mount ● Space savings ● High power density

High Voltage Power MOSFETs

Features ● International standard packages ● Low RDS (on) ● Rated for unclamped Inductive load Switching (UIS) ● Molding epoxies meet UL 94 V-0 flammability classification Advantages ● Easy to mount ● Space savings ● High power density

TMOS POWER FET 3.0 AMPERES 1200 VOLTS

TheD2PAK package has the capability of housing a larger die thanany existing surface mount package which allows it to be used inapplications that require theuse of surface mount components withhigher power and lower RDS(on)capabilities. This high voltage MOSFETuses an advanced termination scheme

TMOS POWER FET 3.0 AMPERES 1200 VOLTS RDS(on) = 5.0 OHM

TMOS E-FET Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate This advanced high–voltage TMOS E–FET is designed to withstand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain–to–source diode with fast recovery time.