TMOS POWER FET 3.0 AMPERES 1200 VOLTS RDS(on) = 5.0 OHM

TMOS E-FET Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate This advanced high–voltage TMOS E–FET is designed to withstand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain–to–source diode with fast recovery time.

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 3A@ TC=25℃ ·Drain Source Voltage -VDSS= 1200V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 5Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

TMOS POWER FET 3.0 AMPERES 1200 VOLTS RDS(on) = 5.0 OHM

1200V N-Channel MOSFET

Application « Adaptor | » Charger « Power management « SMPS Standby Power

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