High Voltage Power MOSFETs

Features ● International standard packages ● Low RDS (on) ● Rated for unclamped Inductive load Switching (UIS) ● Molding epoxies meet UL 94 V-0 flammability classification Advantages ● Easy to mount ● Space savings ● High power density

High Voltage Power MOSFETs

Features ● International standard packages ● Low RDS (on) ● Rated for unclamped Inductive load Switching (UIS) ● Molding epoxies meet UL 94 V-0 flammability classification Advantages ● Easy to mount ● Space savings ● High power density

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 3A@ TC=25℃ · Drain Source Voltage -VDSS= 1200V(Min) · Static Drain-Source On-Resistance -RDS(on) = 4.5Ω(Max)@VGS= 10V APPLICATION · High Voltage Power Supplies · Capacitor Discharge Applications · Pulse Circuits

N通道标准MOSFET

• 国际标准包装\n• 快速切换时间\n• 雪崩评级\n• 坚固的多晶硅栅极单元结构\n• 超低的RDS(on);

N通道标准MOSFET

• 国际标准包装\n• 快速切换时间\n• 雪崩评级\n• 坚固的多晶硅栅极单元结构\n• 超低的RDS(on);

N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode

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High Voltage Power MOSFETs

Features ● International standard packages ● Low RDS (on) ● Rated for unclamped Inductive load Switching (UIS) ● Molding epoxies meet UL 94 V-0 flammability classification Advantages ● Easy to mount ● Space savings ● High power density

High Voltage Power MOSFETs

Features ● International standard packages ● Low RDS (on) ● Rated for unclamped Inductive load Switching (UIS) ● Molding epoxies meet UL 94 V-0 flammability classification Advantages ● Easy to mount ● Space savings ● High power density

TMOS POWER FET 3.0 AMPERES 1200 VOLTS

TheD2PAK package has the capability of housing a larger die thanany existing surface mount package which allows it to be used inapplications that require theuse of surface mount components withhigher power and lower RDS(on)capabilities. This high voltage MOSFETuses an advanced termination scheme

TMOS POWER FET 3.0 AMPERES 1200 VOLTS RDS(on) = 5.0 OHM

TMOS E-FET Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate This advanced high–voltage TMOS E–FET is designed to withstand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain–to–source diode with fast recovery time.