3DD3晶体管资料

  • 3DD30别名:3DD30三极管、3DD30晶体管、3DD30晶体三极管

  • 3DD30生产厂家:中国大陆半导体企业

  • 3DD30制作材料:Si-NPN

  • 3DD30性质:低频或音频放大 (LF)_功率放大 (PA)

  • 3DD30封装形式:直插封装

  • 3DD30极限工作电压:80V

  • 3DD30最大电流允许值:3A

  • 3DD30最大工作频率:<1MHZ或未知

  • 3DD30引脚数:3

  • 3DD30最大耗散功率:30W

  • 3DD30放大倍数

  • 3DD30图片代号:B-91

  • 3DD30vtest:80

  • 3DD30htest:999900

  • 3DD30atest:3

  • 3DD30wtest:30

  • 3DD30代换 3DD30用什么型号代替

型号 功能描述 生产厂家 企业 LOGO 操作

isc Silicon NPN Power Transistor

DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO= 50V(Min) • Collector-Emitter Saturation Voltage- : VCE(sat)= 2.0V(Max) @IC= 3A APPLICATIONS • Designed for B/W TV vertical output applications.

ISC

无锡固电

isc Silicon NPN Power Transistor

DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min) • Collector-Emitter Saturation Voltage- : VCE(sat)= 2.0V(Max) @IC= 3A APPLICATIONS • Designed for B/W TV vertical output applications.

ISC

无锡固电

isc Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 150V(Min) ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5V(Max) @IC= 3A APPLICATIONS ·Designed for B/W TV verticaloutput applications.

ISC

无锡固电

isc Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage-: V(BR)CEO= 40V(Min) ·Collector-Emitter Saturation Voltage-: VCE(sat)= 1.5V(Max) @IC= 3A APPLICATIONS ·Designed for B/W TV vertical output applications.

ISC

无锡固电

isc Silicon NPN Power Transistor

DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) • Collector-Emitter Saturation Voltage- : VCE(sat)= 0.6V(Max) @IC= 0.5A APPLICATIONS • Designed for B/W TV vertical output applications.

ISC

无锡固电

isc Silicon NPN Power Transistor

DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min) • Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5V(Max) @IC= 3A APPLICATIONS • Designed for B/W TV vertical output applications.

ISC

无锡固电

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

FEATURES ● High breakdown voltage ● High current capability ● High switching speed ● High reliability ● RoHS product APPLICATIONS ● Energy-saving ligh ● Electronic ballasts ● High frequency switching power supply ● High frequency power transform ● Commonly power amplifier

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

华微电子吉林华微电子股份有限公司

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

FEATURES ● High breakdown voltage ● High current capability ● High switching speed ● High reliability ● RoHS product APPLICATIONS ● Energy-saving ligh ● Electronic ballasts ● High frequency switching power supply ● High frequency power transform ● Commonly power amplifier

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

华微电子吉林华微电子股份有限公司

双极型晶体管--开关电源用

CRMICRO

华润微电子

双极型晶体管--开关电源用

CRMICRO

华润微电子

双极型晶体管--开关电源用

CRMICRO

华润微电子

Collector-Emitter Breakdown Voltage-: V(BR)CEO= 50V(Min)

文件:195.15 Kbytes Page:2 Pages

ISC

无锡固电

TRANSISTOR (NPN)

文件:318.08 Kbytes Page:2 Pages

KOOCHIN

灏展电子

TRANSISTOR (NPN)

文件:296.92 Kbytes Page:2 Pages

KOOCHIN

灏展电子

TO-220F Plastic-Encapsulate Transistors

文件:1.38154 Mbytes Page:2 Pages

JIANGSU

长电科技

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

文件:294.04 Kbytes Page:5 Pages

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

华微电子吉林华微电子股份有限公司

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

文件:294.04 Kbytes Page:5 Pages

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

华微电子吉林华微电子股份有限公司

3DD3产品属性

  • 类型

    描述

  • 型号

    3DD3

  • 制造商

    ISC

  • 制造商全称

    Inchange Semiconductor Company Limited

  • 功能描述

    isc Silicon NPN Power Transistor

更新时间:2025-10-29 23:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
华晶
24+
NA/
1000
优势代理渠道,原装正品,可全系列订货开增值税票
华晶
18+
TO-251
1000
一级代理,专注军工、汽车、医疗、工业、新能源、电力
华晶
22+
TO-251
100000
代理渠道/只做原装/可含税
N/A
QQ咨询
TO-3
64
全新原装 研究所指定供货商
华晶
25+
TO-251
12300
独立分销商 公司只做原装 诚心经营 免费试样正品保证
华晶
2023+
TO-92
86000
主打螺丝模块系列
华晶
25+
TO-92
860000
明嘉莱只做原装正品现货
华晶
23+
12+
6500
专注配单,只做原装进口现货
华润华晶
2447
TO-92_Forming1
105000
2000个/盒一级代理专营品牌!原装正品,优势现货,长
N/A
24+
TO-3
66800
原厂授权一级代理,专注汽车、医疗、工业、新能源!

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