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型号 功能描述 生产厂家 企业 LOGO 操作

丝印代码:3404B;30V N-Channel Enhancement Mode MOSFET

Description The DMG3402LQ uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = 30V ID =4.2A RDS(ON)

LEIDITECH

雷卯电子

丝印代码:3404B;30V N-Channel Enhancement Mode MOSFET

Description The DMN3028LQ uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = 30V ID =4.2A RDS(ON)

LEIDITECH

雷卯电子

丝印代码:3404B;30V N-Channel Enhancement Mode MOSFET

Description The IRLML0030 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = 30V ID =4.2A RDS(ON)

LEIDITECH

雷卯电子

丝印代码:3404B;30V N-Channel Enhancement Mode MOSFET

Description to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. The IRLML6346 uses advanced trench technology General Features VDS = 30V ID =4.2A RDS(ON)

LEIDITECH

雷卯电子

丝印代码:3404B;30V N-Channel Enhancement Mode MOSFET

Description The NVTR4503N uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = 30V ID =4.2A RDS(ON)

LEIDITECH

雷卯电子

丝印代码:3404B;30V N-Channel Enhancement Mode MOSFET

Description to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. The uses advanced trench technology PMV15ENEA General Features VDS = 30V ID =4.2A RDS(ON)

LEIDITECH

雷卯电子

丝印代码:3404B;30V N-Channel Enhancement Mode MOSFET

Description to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. The uses advanced trench technology PMV19XNEA General Features VDS = 30V ID =4.2A RDS(ON)

LEIDITECH

雷卯电子

丝印代码:3404B;30V N-Channel Enhancement Mode MOSFET

Description to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. The uses advanced trench technology Si2300DS General Features VDS = 30V ID =4.2A RDS(ON)

LEIDITECH

雷卯电子

丝印代码:3404B;30V N-Channel Enhancement Mode MOSFET

Description The SQ2348ES uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = 30V ID =4.2A RDS(ON)

LEIDITECH

雷卯电子

丝印代码:3404B;30V N-CHANNEL ENHANCEMENT MODE MOSFET

Application Lithium battery protection Wireless impact Mobile phone fast charging

YFWDIODE

佑风微

丝印代码:3404B;30V N-Channel Enhancement Mode MOSFET

文件:2.48114 Mbytes Page:5 Pages

LEIDITECH

雷卯电子

SINGLE-SUPPLY DUAL OPERATIONAL AMPLIFIER?

文件:228.23 Kbytes Page:6 Pages

NJRC

日本无线

SINGLE-SUPPLY DUAL OPERATIONAL AMPLIFIER?

文件:228.23 Kbytes Page:6 Pages

NJRC

日本无线

SINGLE-SUPPLY DUAL OPERATIONAL AMPLIFIER?

文件:228.23 Kbytes Page:6 Pages

NJRC

日本无线

SINGLE-SUPPLY DUAL OPERATIONAL AMPLIFIER?

文件:228.23 Kbytes Page:6 Pages

NJRC

日本无线

SINGLE-SUPPLY DUAL OPERATIONAL AMPLIFIER?

文件:228.23 Kbytes Page:6 Pages

NJRC

日本无线

3404B产品属性

  • 类型

    描述

  • 型号

    3404B

  • 功能描述

    电缆固定件和配件 TP M16 BLACK NCNR

  • RoHS

  • 制造商

    Heyco

  • 类型

    Cable Grips, Liquid Tight

  • 材料

    Nylon

  • 颜色

    Black

  • 安装方法

    Cable

  • 最大光束直径

    11.4 mm

更新时间:2026-5-22 20:00:02
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
VISHAY/威世
23+
SOT-23
100586
全新原厂原装正品现货,可提供技术支持、样品免费!
VISHAY
原厂封装
9800
原装进口公司现货假一赔百
VISHAY/威世
25+
SOT-23
48021
VISHAY/威世全新特价SQ2348ES-T1-GE3即刻询购立享优惠#长期有货
VISHAY/威世
23+
SOT-23
11200
原厂授权一级代理、全球订货优势渠道、可提供一站式BO
威士
25+
SMD
918000
明嘉莱只做原装正品现货
VISHAY/威世
22+
N/A
12245
现货,原厂原装假一罚十!
VBSEMI/微碧半导体
2450+
SOT-23
6540
只做原装正品假一赔十为客户做到零风险!!
VISHAY
NA
16355
一级代理 原装正品假一罚十价格优势长期供货
Vishay(威世)
23+
NA
20094
正纳10年以上分销经验原装进口正品做服务做口碑有支持
VISHAY/威世
24+
4139
全新原装正品现货可开票

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