30V N-Channel Enhancement Mode MOSFET

Description The DMG3402LQ uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = 30V ID =4.2A RDS(ON)

N-CHANNEL ENHANCEMENT MODE MOSFET

200 V - 1,000 V Three Phase Bridge

200 V - 1,000 V Three Phase Bridge 18.0 A - 20.0 A Forward Current 70 ns - 3000 ns Recovery Time

200 V - 1,000 V Three Phase Bridge

200 V - 1,000 V Three Phase Bridge 18.0 A - 20.0 A Forward Current 70 ns - 3000 ns Recovery Time

4.0A竊?0V N-CHANNEL MOSFET

文件：121.57 Kbytes Page：5 Pages

Heyco® PG and Metric Threaded Plugs

文件：114.81 Kbytes Page：1 Pages

SPACERS & STANDOFFS

文件：282.99 Kbytes Page：1 Pages