30V N-Channel Enhancement Mode MOSFET

Description The IRLML0030 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = 30V ID =4.2A RDS(ON)

Lower switching losses

Features VDS (V) = 30V RDS(ON)

MOSFET

Features VDS (V) = 30V RDS(ON)

30V 单个 N 通道 HEXFET Power MOSFET, 采用 Micro 3封装

MOSFET

Features VDS (V) = 30V RDS(ON)

Lower switching losses

Features VDS (V) = 30V RDS(ON)

HEXFET Power MOSFET

Features and Benefits Features Low RDS(on) ( ≤ 27mΩ) Industry-standard pinout Compatible with existing Surface Mount Techniques RoHS compliant containing no lead, no bromide and no halogen MSL1, Industrial qualification Benefits Lower switching losses Multi-ven

N-Channel Enhancement Mode MOSFET

Features Vos=30V,lo=58A Rosow

HEXFETPower MOSFET

文件：197 Kbytes Page：10 Pages

ADVANCED PROCESS TECHNOLOGY

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ADVANCED PROCESS TECHNOLOGY

文件：197 Kbytes Page：10 Pages

Industry-standard pinout SOT-23 Package

文件：212.87 Kbytes Page：9 Pages

30V 单个 N 通道 HEXFET Power MOSFET, 采用 Micro 3/ SOT-23 封装

Industry-standard pinout SOT-23 Package

文件：212.87 Kbytes Page：9 Pages

HEXFETPower MOSFET

文件：197 Kbytes Page：10 Pages

HEXFETPower MOSFET

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N-Channel 30-V (D-S) MOSFET

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Inductive Sensors

BES 516-300-S260-S4-D Basic features Approval/Conformity CE UKCA WEEE Basic standard IEC 60947-5-2

Original Strain Relief Bushing Assembly Pliers Instructions and Spare Parts

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Original Strain Relief Bushing Assembly Pliers Directory and Jaw Settings Guide

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BALL KNOB

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Inductive Sensors

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