| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
PMV19XNEA | 30V N-Channel Enhancement Mode MOSFET Description to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. The uses advanced trench technology PMV19XNEA General Features VDS = 30V ID =4.2A RDS(ON) | LEIDITECH 雷卯电子 |   | |
PMV19XNEA | 30 V, N-channel Trench MOSFET 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Low threshold voltage • Extended temperature range Tj = 175 °C • Trench MOSFET | NEXPERIA 安世 | | |
PMV19XNEA | Discrete and MOSFET components, analog & logic ICs 文件：11.62183 Mbytes Page：234 Pages | NEXPERIA 安世 | | |
PMV19XNEA | 30 V, N-channel Trench MOSFET | NEXPERIA 安世 | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
NEXPERIA |
2023+ |
SOT23 |
8800 |
正品渠道现货 终端可提供BOM表配单。 |
|||
恩XP |
24+ |
NA/ |
38000 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
NEXPERIA/安世 |
24+ |
SOT23 |
98000 |
原装现货假一罚十 |
|||
恩XP |
24+ |
SOT-23 |
880000 |
明嘉莱只做原装正品现货 |
|||
恩XP |
14+ |
SOT23 |
22 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
NEXPERIA/安世 |
23+ |
SOT-23 |
50000 |
只做原装正品 |
|||
恩XP |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
|||
恩XP |
23+ |
9865 |
原装正品,假一赔十 |
||||
Nexperia(安世) |
24+ |
SOT-23(TO-236) |
9908 |
支持大陆交货,美金交易。原装现货库存。 |
|||
NEXPERIA/安世 |
24+ |
SOT-23 |
60100 |
郑重承诺只做原装进口现货 |
PMV19XNEA芯片相关品牌
PMV19XNEA规格书下载地址
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2019-10-29
DdatasheetPDF页码索引
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