| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
PMV19XNEA | 30V N-Channel Enhancement Mode MOSFET Description to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. The uses advanced trench technology PMV19XNEA General Features VDS = 30V ID =4.2A RDS(ON) | LEIDITECH 雷卯电子 |   | |
PMV19XNEA | 30 V, N-channel Trench MOSFET 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Low threshold voltage • Extended temperature range Tj = 175 °C • Trench MOSFET | NEXPERIA 安世 | | |
PMV19XNEA | Discrete and MOSFET components, analog & logic ICs 文件：11.62183 Mbytes Page：234 Pages | NEXPERIA 安世 | | |
PMV19XNEA | 30 V, N-channel Trench MOSFET | NEXPERIA 安世 | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
恩XP |
24+ |
SOT-23 |
60000 |
||||
NEXPERIA/安世 |
24+ |
SOT-23 |
9600 |
原装现货,优势供应,支持实单! |
|||
NEXPERIA/安世 |
24+ |
SOT23 |
98000 |
原装现货假一罚十 |
|||
NEXPERIA/安世 |
24+ |
SOT-23 |
60100 |
郑重承诺只做原装进口现货 |
|||
恩XP |
2021/2022+ |
N/A |
6000 |
原厂原装现货订货价格优势终端BOM表可配单提供样品 |
|||
Nexperia/安世 |
23+ |
SOT-23 |
50000 |
全新原装正品现货,支持订货 |
|||
NEXPERIA/安世 |
2511 |
SOT-23 |
360000 |
电子元器件采购降本30%!原厂直采,砍掉中间差价 |
|||
NEXPERIA/安世 |
23+ |
SOT-23 |
50000 |
只做原装正品 |
|||
恩XP |
25+ |
N/A |
6000 |
原装，请咨询 |
|||
24+ |
N/A |
72000 |
一级代理-主营优势-实惠价格-不悔选择 |
PMV19XNEA规格书下载地址
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PMV19XNEA数据表相关新闻
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2019-12-6PMT1017进口原装正品
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2019-10-29
DdatasheetPDF页码索引
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