型号 功能描述 生产厂家 企业 LOGO 操作
PMV19XNEA

30V N-Channel Enhancement Mode MOSFET

Description to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. The uses advanced trench technology PMV19XNEA General Features VDS = 30V ID =4.2A RDS(ON)

LEIDITECH

雷卯电子

PMV19XNEA

30 V, N-channel Trench MOSFET

1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Low threshold voltage • Extended temperature range Tj = 175 °C • Trench MOSFET

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

PMV19XNEA

30 V, N-channel Trench MOSFET

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

更新时间:2025-9-26 8:31:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
NEXPERIA/安世
24+
SOT23
98000
原装现货假一罚十
恩XP
23+
N/A
3000
原厂原装正品
恩XP
2021/2022+
N/A
6000
原厂原装现货订货价格优势终端BOM表可配单提供样品
Nexperia(安世)
23+
SOT-23(TO-236)
7087
Nexperia安世原装现货库存,原厂技术支持!
NEXPERIA/安世
23+
SOT-23
89630
当天发货全新原装现货
恩XP
24+
SOT-23
880000
明嘉莱只做原装正品现货
NEXPERIA
2023+
SOT23
8800
正品渠道现货 终端可提供BOM表配单。
恩XP
24+
NA/
38000
优势代理渠道,原装正品,可全系列订货开增值税票
恩XP
14+
SOT23
22
一级代理,专注军工、汽车、医疗、工业、新能源、电力
恩XP
23+
9865
原装正品,假一赔十

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