30V N-Channel Enhancement Mode MOSFET

Description to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. The IRLML6346 uses advanced trench technology General Features VDS = 30V ID =4.2A RDS(ON)

N-Channel MOSFET

Features VDS (V) = 30V RDS(ON)

30V 单 N 通道 StrongIRFET ™功率 MOSFET，采用 SOT-23 封装

N-Channel MOSFET

Features VDS (V) = 30V RDS(ON)

N-Channel MOSFET

Application(s) Load/ System Switch Features VDS (V) = 30V RDS(ON) 63m (VGS = 4.5V) RDS(ON) 80m (VGS = 2.5V)

HEXFET Power MOSFET

文件：218.49 Kbytes Page：10 Pages

RoHS compliant containing no lead, no bromide and no halogen

文件：218.49 Kbytes Page：10 Pages

RoHS compliant containing no lead, no bromide and no halogen

文件：218.49 Kbytes Page：10 Pages

HEXFETPower MOSFET

文件：218.49 Kbytes Page：10 Pages

HEXFETPower MOSFET

文件：223.09 Kbytes Page：2 Pages

Ultralow Power, 3-Lead, SOT-23 Microprocessor Reset Circuits

GENERAL DESCRIPTION The ADM6326/ADM6328/ADM6346/ADM6348 devices provide low cost solutions for protecting sensitive circuitry, such as micro processor and telecommunications circuitry. With built-in glitch immunity, ultralow supply currents, and 24 reset threshold voltage options, the ADM632

22 (7/30) AWG Tinned Copper

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Anchor, No Wrench, 6in x 66in Tripleye

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SEMICONDUCTORS

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Three-phase Full-wave Fan Motor Driver

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