丝印代码：3404B；30V N-Channel Enhancement Mode MOSFET

Description The NVTR4503N uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = 30V ID =4.2A RDS(ON)

丝印代码：TR3*；Power MOSFET

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单 N 沟道功率 MOSFET 30V，2.5A，110mΩ

N-Channel 30-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • DC/DC Converter

Power MOSFET

文件：97.86 Kbytes Page：5 Pages

HEX BUFFER

DESCRIPTION The HCF4503B is a monolithic integrated circuits, available in 16-lead dual in-line plastic package and plastic micro package. The HCF4503B is a hex noninverting buffer with 3-state outputs having high sink and source-current capability. Two disable controls are provided, one

HEX BUFFER

DESCRIPTION The HCF4503B is a monolithic integrated circuits, available in 16-lead dual in-line plastic package and plastic micro package. The HCF4503B is a hex noninverting buffer with 3-state outputs having high sink and source-current capability. Two disable controls are provided, one

CMOS HEX BUFFER

文件：481.67 Kbytes Page：11 Pages

CMOS HEX BUFFER

文件：481.67 Kbytes Page：11 Pages

CMOS HEX BUFFER

文件：481.67 Kbytes Page：11 Pages