位置：首页 > IC中文资料第6195页 > 2SK421
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
2SK421 | SILICON N CHANNEL MPS TYPE (7T-MOS) HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS. SWITCHING REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS. FEATURES . High Breakdown Voltage : V(gR) Dg S =450V . High Forward Transfer Admittance : ]Yf s |=2.5S (Typ.) . Low Leakage Current : lGSS=±100nA(Max. ) @ Vgs=±20V lDSS=lmA( | TOSHIBA 东芝 |   | |
isc N-Channel MOSFET Transistor FEATURES ·Drain Current : ID= 10A@ TC=25℃ ·Drain Source Voltage : VDSS= 900V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1.3Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D | ISC 无锡固电 | | ||
MOS FIELD EFFECT TRANSISTOR DESCRIPTION The 2SK4212 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. FEATURES • Low on-state resistance RDS(on)1 = 7.8 mΩ | RENESAS 瑞萨 | | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current : ID= 48A@ TC=25℃ ·Drain Source Voltage : VDSS= 30V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 8.0mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D | ISC 无锡固电 | | ||
SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK4212A is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. FEATURES • Low on-state resistance RDS(on)1 = 8.0 | RENESAS 瑞萨 | | ||
SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK4212A is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. FEATURES • Low on-state resistance RDS(on)1 = 8.0 | RENESAS 瑞萨 | | ||
SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK4212A is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. FEATURES • Low on-state resistance RDS(on)1 = 8.0 | RENESAS 瑞萨 | | ||
MOS FIELD EFFECT TRANSISTOR DESCRIPTION The 2SK4212 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. FEATURES • Low on-state resistance RDS(on)1 = 7.8 mΩ | RENESAS 瑞萨 | | ||
MOS FIELD EFFECT TRANSISTOR DESCRIPTION The 2SK4212 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. FEATURES • Low on-state resistance RDS(on)1 = 7.8 mΩ | RENESAS 瑞萨 | | ||
SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK4213 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. FEATURES • Low on-state resistance RDS(on)1 = 6.0 m | RENESAS 瑞萨 | | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current : ID= 64A@ TC=25℃ ·Drain Source Voltage : VDSS= 30V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 6.0mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D | ISC 无锡固电 | | ||
SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK4213A is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. FEATURES • Low on-state resistance RDS(on | RENESAS 瑞萨 | | ||
SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK4213A is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. FEATURES • Low on-state resistance RDS(on | RENESAS 瑞萨 | | ||
SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK4213A is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. FEATURES • Low on-state resistance RDS(on | RENESAS 瑞萨 | | ||
SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK4213 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. FEATURES • Low on-state resistance RDS(on)1 = 6.0 m | RENESAS 瑞萨 | | ||
SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK4213 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. FEATURES • Low on-state resistance RDS(on)1 = 6.0 m | RENESAS 瑞萨 | | ||
N-Channel Silicon MOSFET General-Purpose Switching Device Applications 文件：292.17 Kbytes Page：5 Pages | SANYO 三洋 | | ||
N-Channel 20-V (D-S)175 C MOSFET 文件：916.73 Kbytes Page：6 Pages | VBSEMI 微碧半导体 | | ||
SWITCHING N-CHANNEL POWER MOS FET | RENESAS 瑞萨 | | ||
SWITCHING N-CHANNEL POWER MOS FET | RENESAS 瑞萨 | | ||
N-Channel 30-V (D-S) MOSFET 文件：1.01875 Mbytes Page：8 Pages | VBSEMI 微碧半导体 | | ||
SWITCHING N-CHANNEL POWER MOS FET | RENESAS 瑞萨 | |
2SK421产品属性
- 类型
描述
- 型号
2SK421
- 功能描述
TRANSISTOR | MOSFET | N-CHANNEL | 450V V(BR)DSS | 5A I(D) | TO-220VAR
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
RENESAS/瑞萨 |
24+ |
NA/ |
4240 |
原装现货,当天可交货,原型号开票 |
|||
RENESAS(瑞萨)/IDT |
24+ |
7350 |
现货供应,当天可交货!免费送样,原厂技术支持!!! |
||||
NEC |
2016+ |
TO252 |
9000 |
只做原装,假一罚十,公司可开17%增值税发票! |
|||
24+ |
TO-252 |
20000 |
全新原厂原装，进口正品现货，正规渠道可含税！！ |
||||
NEC |
TO252 |
53650 |
一级代理 原装正品假一罚十价格优势长期供货 |
||||
RENESAS |
原厂封装 |
9800 |
原装进口公司现货假一赔百 |
||||
RENESAS/瑞萨 |
23+ |
TO-252 |
6000 |
专业配单保证原装正品假一罚十 |
|||
NEC |
25+ |
TO252 |
132 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
|||
RENESAS |
25+ |
TO252 |
30000 |
代理全新原装现货,价格优势 |
|||
RENESAS |
26+ |
TO-252 |
360000 |
进口原装现货 |
2SK421芯片相关品牌
2SK421规格书下载地址
2SK421参数引脚图相关
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2SK421数据表相关新闻
2SMPP-02
优势渠道
2023-2-162SK3105-T1B-A找代理商上深圳百域芯科技
2SK3105-T1B-A找代理商上深圳百域芯科技 芯片详细信息 Source Content uid: 2SK3484-Z-E1-AZ Manufacturer Part Number: 2SK3484-Z-E1-AZ Brand_Name: Renesas Rohs Code: Yes Part Life Cycle Code: Not Recommended Ihs Manufacturer: RENESAS ELECTRONICS CORP Part Package
2021-6-242SX1-T
2SX1-T，全新原装现货0755-82732291当天发货或门市自取. QQ：1755232575 /QQ：1157611585，微信号:87680558.
2021-2-102SK508G-K51-AE3-R
属性 参数值 商品目录 结型场效应晶体管（JFET） 连续漏极电流（Id）（25°C 时） 50mA 漏源电压（Vdss） 15V 类型 N 沟道 最大功率耗散（Ta=25°C） 200mW
2020-11-122SK3313
2SK3313，全新原装当天发货或门市自取0755-82732291.
2020-3-282SK3591-01R
2SK3591-01R，全新原装当天发货或门市自取0755-82732291.
2020-3-28
DdatasheetPDF页码索引
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