DESCRIPTION

The 2SK4212 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics,

and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier.

FEATURES

• Low on-state resistance

RDS(on)1 = 7.8 mΩ MAX. (VGS = 10 V, ID = 30 A)

RDS(on)2 = 14 mΩ MAX. (VGS = 4.5 V, ID = 20 A)

• Low total gate charge

QG = 27 nC TYP. (VDD = 15 V, VGS = 10 V, ID = 30 A)

• 4.5 V drive available

• Avalanche capability ratings