SILICON N CHANNEL MPS TYPE (7T-MOS)

HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS. SWITCHING REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS. FEATURES . High Breakdown Voltage : V(br)dss=400V . High Forward Transfer Admittance : lYf s l=2.5S (Typ.) . Low Leakage Current : LGSS=i100nA(Max. ) @ Vgs=±20V IDSS= 1mA (M

MOS FIELD EFFECT TRANSISTOR

SWITCHING CHANNEL POWER MOS FET DESCRIPTION The 2SK4201 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Low on-state resistance RDS(on) = 13 mΩ MAX. (VGS = 10 V, ID = 40 A) • Low input capacitance Ciss = 4700 pF TYP.

MOS FIELD EFFECT TRANSISTOR

SWITCHING CHANNEL POWER MOS FET DESCRIPTION The 2SK4201 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Low on-state resistance RDS(on) = 13 mΩ MAX. (VGS = 10 V, ID = 40 A) • Low input capacitance Ciss = 4700 pF TYP.

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK4202 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Low on-state resistance RDS(on) = 7.5 mΩ MAX. (VGS = 10 V, ID = 42 A) • Low input capacitance Ciss = 6300 pF TYP. (VDS = 10 V)

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK4202 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Low on-state resistance RDS(on) = 7.5 mΩ MAX. (VGS = 10 V, ID = 42 A) • Low input capacitance Ciss = 6300 pF TYP. (VDS = 10 V)

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

SILICON N CHANNEL MPS TYPE (7T-MOS)

HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS. SWITCHING REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS. FEATURES . High Breakdown Voltage : V(gR) Dg S =450V . High Forward Transfer Admittance : ]Yf s |=2.5S (Typ.) . Low Leakage Current : lGSS=±100nA(Max. ) @ Vgs=±20V lDSS=lmA(

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 10A@ TC=25℃ ·Drain Source Voltage : VDSS= 900V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1.3Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION The 2SK4212 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. FEATURES • Low on-state resistance RDS(on)1 = 7.8 mΩ

SWITCHING N-CHANNEL POWER MOS FET

DESCRIPTION The 2SK4212A is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. FEATURES • Low on-state resistance RDS(on)1 = 8.0

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 48A@ TC=25℃ ·Drain Source Voltage : VDSS= 30V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 8.0mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D

SWITCHING N-CHANNEL POWER MOS FET

DESCRIPTION The 2SK4212A is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. FEATURES • Low on-state resistance RDS(on)1 = 8.0

SWITCHING N-CHANNEL POWER MOS FET

DESCRIPTION The 2SK4212A is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. FEATURES • Low on-state resistance RDS(on)1 = 8.0

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION The 2SK4212 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. FEATURES • Low on-state resistance RDS(on)1 = 7.8 mΩ

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION The 2SK4212 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. FEATURES • Low on-state resistance RDS(on)1 = 7.8 mΩ

SWITCHING N-CHANNEL POWER MOS FET

DESCRIPTION The 2SK4213 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. FEATURES • Low on-state resistance RDS(on)1 = 6.0 m

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 64A@ TC=25℃ ·Drain Source Voltage : VDSS= 30V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 6.0mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D

SWITCHING N-CHANNEL POWER MOS FET

DESCRIPTION The 2SK4213A is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. FEATURES • Low on-state resistance RDS(on

SWITCHING N-CHANNEL POWER MOS FET

DESCRIPTION The 2SK4213A is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. FEATURES • Low on-state resistance RDS(on

SWITCHING N-CHANNEL POWER MOS FET

DESCRIPTION The 2SK4213A is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. FEATURES • Low on-state resistance RDS(on

SWITCHING N-CHANNEL POWER MOS FET

DESCRIPTION The 2SK4213 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. FEATURES • Low on-state resistance RDS(on)1 = 6.0 m

SWITCHING N-CHANNEL POWER MOS FET

DESCRIPTION The 2SK4213 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. FEATURES • Low on-state resistance RDS(on)1 = 6.0 m

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 26A@ TC=25℃ ·Drain Source Voltage : VDSS= 500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.24Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 23A@ TC=25℃ ·Drain Source Voltage : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.34Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 48A@ TC=25℃ ·Drain Source Voltage : VDSS= 75V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 13.7mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

HIGH SPEED SWITCHING APPLICATIONS. DC-DC CONVERTER AND INTERFACE APPLICATIONS.

FEATURES: . Excellent Switching Times : toff 20ns (Typ.) . High Forward Transfer Admittance : Yfsl-150mS (Typ.) @ID-0.3A . Low Leakage Current : IGSS=+100nA (Max.) @VGS=+20V : IDSS 1mA (Max.) @VDS-10

AM Tuner RF Amp Applications

AM Tuner RF Amplifier Applications Applications · AM tuner RF amplifiers and low-noise amplifiers. Features · Largeyfs. · Ultralow noise figure. · Small Crss.

HIGH SPEED POWER SWITCHING

SILICON N-CHANNEL MOS FET HGH SPEED POWER SWITCHING

HIGH SPEED POWER SWITCHING

SILICON N-CHANNEL MOS FET HGH SPEED POWER SWITCHING

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 3.0A@ TC=25℃ ·Drain Source Voltage : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.7Ω(Max) @ VGS= 15V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 3.0A@ TC=25℃ ·Drain Source Voltage : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.7Ω(Max) @ VGS= 15V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

HIGH SPEED POWER SWITCHING

SILICON N-CHANNEL MOS FET HGH SPEED POWER SWITCHING

N-Channel Silicon MOSFET General-Purpose Switching Device Applications

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isc N-Channel MOSFET Transistor

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Silicon N-channel junction FET

Swiching Regulator Applications

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iscN-Channel MOSFET Transistor

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N-Channel 20-V (D-S)175 C MOSFET

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Fast Switching Speed

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