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2SK381价格

参考价格：￥24.9906

型号：2SK3812-ZP-E1-AY 品牌：Renesas 备注：这里有2SK381多少钱，2025年最近7天走势，今日出价，今日竞价，2SK381批发/采购报价，2SK381行情走势销售排行榜，2SK381报价。

型号	功能描述	生产厂家&企业	LOGO
2SK381	2SK381 文件：49.07 Kbytes Page：1 Pages	ETCList of Unclassifed Manufacturers 未分类制造商	ETC
2SK3811	SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION The 2SK3811 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES •Super low on-state resistance RDS(on)= 1.8 mΩMAX. (VGS= 10 V, ID= 55 A) •High Current Rating: ID(DC)= ±110 A	NEC 瑞萨	NEC
2SK3811	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3811 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance RDS(on) = 1.8 mΩ MAX. (VGS = 10 V, ID = 55 A) • High Current Rating: ID(DC) = ±110 A	RENESAS 瑞萨	RENESAS
2SK3811-ZP	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3811 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance RDS(on) = 1.8 mΩ MAX. (VGS = 10 V, ID = 55 A) • High Current Rating: ID(DC) = ±110 A	RENESAS 瑞萨	RENESAS
2SK3811-ZP	SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION The 2SK3811 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES •Super low on-state resistance RDS(on)= 1.8 mΩMAX. (VGS= 10 V, ID= 55 A) •High Current Rating: ID(DC)= ±110 A	NEC 瑞萨	NEC
2SK3811-ZP	isc N-Channel MOSFET Transistor FEATURES ·Drain Current : ID= 110A@ TC=25℃ ·Drain Source Voltage : VDSS= 40V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1.8mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-	ISC 无锡固电	ISC
2SK3812	SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION The 2SK3812 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance RDS(on)1 = 2.8 mΩ MAX. (VGS = 10 V, ID = 55 A) RDS(on)2 = 3.7 mΩ MAX. (VGS = 4.5 V, ID = 55 A) • High current rating	NEC 瑞萨	NEC
2SK3812	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3812 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance RDS(on)1 = 2.8 mΩ MAX. (VGS = 10 V, ID = 55 A) RDS(on)2 = 3.7 mΩ MAX. (VGS = 4.5 V, ID = 55 A)	RENESAS 瑞萨	RENESAS
2SK3812-ZP	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3812 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance RDS(on)1 = 2.8 mΩ MAX. (VGS = 10 V, ID = 55 A) RDS(on)2 = 3.7 mΩ MAX. (VGS = 4.5 V, ID = 55 A)	RENESAS 瑞萨	RENESAS
2SK3812-ZP	SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION The 2SK3812 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance RDS(on)1 = 2.8 mΩ MAX. (VGS = 10 V, ID = 55 A) RDS(on)2 = 3.7 mΩ MAX. (VGS = 4.5 V, ID = 55 A) • High current rating	NEC 瑞萨	NEC
2SK3812-ZP	isc N-Channel MOSFET Transistor FEATURES ·Drain Current : ID= 110A@ TC=25℃ ·Drain Source Voltage : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1.8mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-	ISC 无锡固电	ISC
2SK3813	isc N-Channel MOSFET Transistor FEATURES ·Drain Current : ID= 60A@ TC=25℃ ·Drain Source Voltage : VDSS= 40V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 5.3mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D	ISC 无锡固电	ISC
2SK3813	SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION The 2SK3813 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance RDS(on)1 = 5.3 mΩ MAX. (VGS = 10 V, ID = 30 A) RDS(on)2 = 7.1 mΩ MAX. (VGS = 4.5 V, ID = 30 A) • Low Ciss: Ciss = 5500 pF	NEC 瑞萨	NEC
2SK3813	MOS Field Effect Transistor Features Low On-state resistance RDS(on)1 = 5.3 mΩ MAX. (VGS = 10 V, ID = 30 A) RDS(on)2 = 7.1 mΩ MAX. (VGS = 4.5 V, ID = 30 A) Low C iss: C iss = 5500 pF TYP.	KEXIN 科信电子	KEXIN
2SK3813	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3813 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance RDS(on)1 = 5.3 mΩ MAX. (VGS = 10 V, ID = 30 A) RDS(on)2 = 7.1 mΩ MAX. (VGS = 4.5 V, ID = 30 A)	RENESAS 瑞萨	RENESAS
2SK3813-Z	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3813 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance RDS(on)1 = 5.3 mΩ MAX. (VGS = 10 V, ID = 30 A) RDS(on)2 = 7.1 mΩ MAX. (VGS = 4.5 V, ID = 30 A)	RENESAS 瑞萨	RENESAS
2SK3813-Z	isc N-Channel MOSFET Transistor FEATURES ·Drain Current : ID= 60A@ TC=25℃ ·Drain Source Voltage : VDSS= 40V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 5.3mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D	ISC 无锡固电	ISC
2SK3813-Z	SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION The 2SK3813 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance RDS(on)1 = 5.3 mΩ MAX. (VGS = 10 V, ID = 30 A) RDS(on)2 = 7.1 mΩ MAX. (VGS = 4.5 V, ID = 30 A) • Low Ciss: Ciss = 5500 pF	NEC 瑞萨	NEC
2SK3814	isc N-Channel MOSFET Transistor FEATURES ·Drain Current : ID= 60A@ TC=25℃ ·Drain Source Voltage : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 8.7mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D	ISC 无锡固电	ISC
2SK3814	MOS Field Effect Transistor Features Low On-state resistance RDS(on)1 = 8.7mΩ MAX. (VGS = 10 V, ID = 30 A) RDS(on)2 = 10.5 mΩ MAX. (VGS = 4.5 V, ID = 30 A) Low C iss: C iss = 5450 pF TYP.	KEXIN 科信电子	KEXIN
2SK3814	SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION The 2SK3814 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance RDS(on)1 = 8.7 mΩ MAX. (VGS = 10 V, ID = 30 A) RDS(on)2 = 10.5 mΩ MAX. (VGS = 4.5 V, ID = 30 A) • Low Ciss: Ciss = 5450 pF	NEC 瑞萨	NEC
2SK3814	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3814 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance RDS(on)1 = 8.7 mΩ MAX. (VGS = 10 V, ID = 30 A) RDS(on)2 = 10.5 mΩ MAX. (VGS = 4.5 V, ID = 30 A)	RENESAS 瑞萨	RENESAS
2SK3814-Z	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3814 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance RDS(on)1 = 8.7 mΩ MAX. (VGS = 10 V, ID = 30 A) RDS(on)2 = 10.5 mΩ MAX. (VGS = 4.5 V, ID = 30 A)	RENESAS 瑞萨	RENESAS
2SK3814-Z	SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION The 2SK3814 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance RDS(on)1 = 8.7 mΩ MAX. (VGS = 10 V, ID = 30 A) RDS(on)2 = 10.5 mΩ MAX. (VGS = 4.5 V, ID = 30 A) • Low Ciss: Ciss = 5450 pF	NEC 瑞萨	NEC
2SK3814-Z	isc N-Channel MOSFET Transistor FEATURES ·Drain Current : ID= 60A@ TC=25℃ ·Drain Source Voltage : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 8.7mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D	ISC 无锡固电	ISC
2SK3815	General-Purpose Switching Device Applications General-Purpose Switching Device Applications Features • Low ON-resistance. • Ultrahigh-speed switching. • 4V drive. • Motor drive, DC / DC converter. • Avalanche resistance guarantee.	SANYOSanyo Semicon Device 三洋三洋电机株式会社	SANYO
2SK3815L	isc N-Channel MOSFET Transistor FEATURES ·Drain Current : ID= 23A@ TC=25℃ ·Drain Source Voltage : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 55mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC	ISC 无锡固电	ISC
2SK3815S	isc N-Channel MOSFET Transistor FEATURES ·Drain Current : ID= 23A@ TC=25℃ ·Drain Source Voltage : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 55mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC	ISC 无锡固电	ISC
2SK3816	N-Channel Silicon MOSFET General-Purpose Switching Device General-Purpose Switching Device Applications Features • Low ON-resistance. • Ultrahigh-speed switching. • 4V drive. • Motor drive, DC / DC converter. • Avalanche resistance guarantee.	SANYOSanyo Semicon Device 三洋三洋电机株式会社	SANYO
2SK3816	8-bit Withstand Voltage Microcontroller Features • ON-resistance RDS(on)1=20mΩ(typ.) • Input capacitance Ciss=1780pF(typ.) • 4V drive	ONSEMI 安森美半导体	ONSEMI
2SK3816-1E	8-bit Withstand Voltage Microcontroller Features • ON-resistance RDS(on)1=20mΩ(typ.) • Input capacitance Ciss=1780pF(typ.) • 4V drive	ONSEMI 安森美半导体	ONSEMI
2SK3816-DL-1E	8-bit Withstand Voltage Microcontroller Features • ON-resistance RDS(on)1=20mΩ(typ.) • Input capacitance Ciss=1780pF(typ.) • 4V drive	ONSEMI 安森美半导体	ONSEMI
2SK3816L	isc N-Channel MOSFET Transistor FEATURES ·Drain Current : ID= 40A@ TC=25℃ ·Drain Source Voltage : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 26mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC	ISC 无锡固电	ISC
2SK3816S	isc N-Channel MOSFET Transistor FEATURES ·Drain Current : ID= 40A@ TC=25℃ ·Drain Source Voltage : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 26mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC	ISC 无锡固电	ISC
2SK3817	N-Channel Silicon MOSFET General-Purpose Switching Device N-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • Low ON-resistance. • Ultrahigh-speed switching. • 4V drive. • Motor drive, DC / DC converter. • Avalanche resistance guarantee.	SANYOSanyo Semicon Device 三洋三洋电机株式会社	SANYO
2SK3817L	isc N-Channel MOSFET Transistor FEATURES ·Drain Current : ID= 60A@ TC=25℃ ·Drain Source Voltage : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 15mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC	ISC 无锡固电	ISC
2SK3817S	isc N-Channel MOSFET Transistor FEATURES ·Drain Current : ID= 60A@ TC=25℃ ·Drain Source Voltage : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 15mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC	ISC 无锡固电	ISC
2SK3818	N-Channel Silicon MOSFET General-Purpose Switching Device • Low ON-resistance. • Ultrahigh-speed switching. • 4V drive. • Motor drive, DC / DC converter. • Avalanche resistance guarantee.	SANYOSanyo Semicon Device 三洋三洋电机株式会社	SANYO
2SK3818L	isc N-Channel MOSFET Transistor FEATURES ·Drain Current : ID= 74A@ TC=25℃ ·Drain Source Voltage : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 13mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC	ISC 无锡固电	ISC
2SK3818S	isc N-Channel MOSFET Transistor FEATURES ·Drain Current : ID= 74A@ TC=25℃ ·Drain Source Voltage : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 13mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC	ISC 无锡固电	ISC
2SK3819	General-Purpose Switching Device Applications General-Purpose Switching Device Applications Features • Low ON-resistance. • 4V drive. • Ultrahigh-speed switching. • Motor drive, DC / DC converter. • Avalanche resistance guarantee.	SANYOSanyo Semicon Device 三洋三洋电机株式会社	SANYO
2SK3819L	isc N-Channel MOSFET Transistor FEATURES ·Drain Current : ID= 14A@ TC=25℃ ·Drain Source Voltage : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 130mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-	ISC 无锡固电	ISC
2SK3819S	isc N-Channel MOSFET Transistor FEATURES ·Drain Current : ID= 14A@ TC=25℃ ·Drain Source Voltage : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 130mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-	ISC 无锡固电	ISC
2SK3811_15	SWITCHING N-CHANNEL POWER MOS FET 文件：274.83 Kbytes Page：10 Pages	RENESAS 瑞萨	RENESAS
2SK3812_15	SWITCHING N-CHANNEL POWER MOS FET 文件：276.66 Kbytes Page：10 Pages	RENESAS 瑞萨	RENESAS
2SK3813_15	SWITCHING N-CHANNEL POWER MOS FET 文件：250.3 Kbytes Page：10 Pages	RENESAS 瑞萨	RENESAS
2SK3813-Z-E1-AZ	包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带描述：TRANSISTOR 分立半导体产品晶体管 - FET，MOSFET - 单个	ETC 知名厂家	ETC
2SK3814	N-Channel 60 V (D-S) MOSFET 文件：1.38223 Mbytes Page：7 Pages	VBSEMI 微碧半导体	VBSEMI
2SK3814(0)-Z-E1-AZ	包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带描述：TRANSISTOR 分立半导体产品晶体管 - FET，MOSFET - 单个	ETC 知名厂家	ETC
2SK3814_15	SWITCHING N-CHANNEL POWER MOS FET 文件：252.85 Kbytes Page：10 Pages	RENESAS 瑞萨	RENESAS
2SK3815	N-Channel Silicon MOSFET General-Purpose Switching Device Applications 文件：63.81 Kbytes Page：5 Pages	SANYOSanyo Semicon Device 三洋三洋电机株式会社	SANYO
2SK3815_07	N-Channel Silicon MOSFET General-Purpose Switching Device Applications 文件：63.81 Kbytes Page：5 Pages	SANYOSanyo Semicon Device 三洋三洋电机株式会社	SANYO
2SK3818	General-Purpose Switching Device Applications 文件：103.83 Kbytes Page：4 Pages	ONSEMI 安森美半导体	ONSEMI

2SK381产品属性

类型
描述
型号
2SK381
制造商
Renesas Electronics Corporation

2SK381供应商更多...

更新时间：2025-8-10 14:26:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
千层芯半导体(深圳)有限公司	2SK3815-DL-E	SANYO	24+	SOT263	30617	一级代理全新原装热卖	询价
深圳兆威电子有限公司	2SK3814-Z-E1-AZ	NEC	22+	TO252	36508	原装正品现货	询价
深圳市凌旭科技有限公司	2SK3814-Z-E1-AZ	NEC	21+	TO252	1773		询价
深圳市威雅利发展有限公司	2SK3812-ZP-E1	RENESAS	11+	TO-263	545	一级代理,专注军工、汽车、医疗、工业、新能源、电力	询价
深圳市豪迈兴电子有限公司	2SK3814-Z	NEC	24+		4326	公司原厂原装现货假一罚十!特价出售!强势库存!	询价
深圳市航润创能电子集团有限公司	2SK3812-ZP-EI-AY	RENESAS	21+	TO-263	880	原装现货假一赔十	询价
深圳深宇韬电子科技有限公司	2SK3812-ZP-EI-AY	RENESAS	2023+	TO-263	8800	正品渠道现货终端可提供BOM表配单。	询价
深圳市南科功率半导体有限公司	2SK3814-Z-E1-AZ	NK/南科功率	2025+	TO-252-2-L	986966	国产	询价
深圳市一线半导体有限公司	2SK381		24+		2000		询价
深圳市创新迹电子有限公司	2SK3812-ZPMOS(场效应管)	NEC	2021+	TO-263	9000	原装现货,随时欢迎询价	询价

2SK381芯片相关品牌

2SK381规格书下载地址

2SK381参数引脚图相关

2SK381数据表相关新闻

2SMPP-02
优势渠道
2023-2-16
2SK3105-T1B-A找代理商上深圳百域芯科技
2SK3105-T1B-A找代理商上深圳百域芯科技芯片详细信息 Source Content uid: 2SK3484-Z-E1-AZ Manufacturer Part Number: 2SK3484-Z-E1-AZ Brand_Name: Renesas Rohs Code: Yes Part Life Cycle Code: Not Recommended Ihs Manufacturer: RENESAS ELECTRONICS CORP Part Package
2021-6-24
2SX1-T
2SX1-T，全新原装现货0755-82732291当天发货或门市自取. QQ：1755232575 /QQ：1157611585，微信号:87680558.
2021-2-10
2SK508G-K51-AE3-R
属性参数值商品目录结型场效应晶体管（JFET）连续漏极电流（Id）（25°C 时） 50mA 漏源电压（Vdss） 15V 类型 N 沟道最大功率耗散（Ta=25°C） 200mW
2020-11-12
2SK3313
2SK3313，全新原装当天发货或门市自取0755-82732291.
2020-3-28
2SK3591-01R
2SK3591-01R，全新原装当天发货或门市自取0755-82732291.
2020-3-28

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2SK381价格

2SK381产品属性

2SK381供应商更多...

2SK381芯片相关品牌

2SK381规格书下载地址

2SK381参数引脚图相关

2SK381数据表相关新闻

2SMPP-02

2SK3105-T1B-A找代理商上深圳百域芯科技

2SX1-T

2SK508G-K51-AE3-R

2SK3313

2SK3591-01R

DdatasheetPDF页码索引