2SK381数据表ic资料瑞萨现货供应价格NEC-IC资料网

找IC，尽在114IC

登录注册

芯片资料

芯片资料
丝印反查
库存查询
行业新闻
制造商
替换型号
晶体管

精确

位置：首页 > IC中文资料 > 2SK381

2SK381价格

参考价格：￥24.9906

型号：2SK3812-ZP-E1-AY 品牌：Renesas 备注：这里有2SK381多少钱，2026年最近7天走势，今日出价，今日竞价，2SK381批发/采购报价，2SK381行情走势销售排行榜，2SK381报价。

型号	功能描述	生产厂家企业	LOGO
2SK381	2SK381 文件：49.07 Kbytes Page：1 Pages	ETCList of Unclassifed Manufacturers 未分类制造商	ETC
2SK381	2SK381	未知品牌	未知品牌
2SK3811	SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION The 2SK3811 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES •Super low on-state resistance RDS(on)= 1.8 mΩMAX. (VGS= 10 V, ID= 55 A) •High Current Rating: ID(DC)= ±110 A	NEC 瑞萨	NEC
2SK3811	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3811 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance RDS(on) = 1.8 mΩ MAX. (VGS = 10 V, ID = 55 A) • High Current Rating: ID(DC) = ±110 A	RENESAS 瑞萨	RENESAS
2SK3811-ZP	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3811 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance RDS(on) = 1.8 mΩ MAX. (VGS = 10 V, ID = 55 A) • High Current Rating: ID(DC) = ±110 A	RENESAS 瑞萨	RENESAS
2SK3811-ZP	isc N-Channel MOSFET Transistor FEATURES ·Drain Current : ID= 110A@ TC=25℃ ·Drain Source Voltage : VDSS= 40V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1.8mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-	ISC 无锡固电	ISC
2SK3811-ZP	SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION The 2SK3811 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES •Super low on-state resistance RDS(on)= 1.8 mΩMAX. (VGS= 10 V, ID= 55 A) •High Current Rating: ID(DC)= ±110 A	NEC 瑞萨	NEC
2SK3812	SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION The 2SK3812 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance RDS(on)1 = 2.8 mΩ MAX. (VGS = 10 V, ID = 55 A) RDS(on)2 = 3.7 mΩ MAX. (VGS = 4.5 V, ID = 55 A) • High current rating	NEC 瑞萨	NEC
2SK3812	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3812 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance RDS(on)1 = 2.8 mΩ MAX. (VGS = 10 V, ID = 55 A) RDS(on)2 = 3.7 mΩ MAX. (VGS = 4.5 V, ID = 55 A)	RENESAS 瑞萨	RENESAS
2SK3812-ZP	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3812 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance RDS(on)1 = 2.8 mΩ MAX. (VGS = 10 V, ID = 55 A) RDS(on)2 = 3.7 mΩ MAX. (VGS = 4.5 V, ID = 55 A)	RENESAS 瑞萨	RENESAS
2SK3812-ZP	Nch Single Power Mosfet 60V 110A 2.8Mohm Mp-25Zp/To-263 The 2SK3812 is N-channel MOS Field Effect Transistor designed for high current switching applications. • Super low on-state resistanceRDS(on)1 = 2.8 mΩ MAX. (VGS = 10 V, ID = 55 A)RDS(on)2 = 3.7 mΩ MAX. (VGS = 4.5 V, ID = 55 A)\n• High current rating: ID(DC) = ±110 A;	RENESAS 瑞萨	RENESAS
2SK3812-ZP	SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION The 2SK3812 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance RDS(on)1 = 2.8 mΩ MAX. (VGS = 10 V, ID = 55 A) RDS(on)2 = 3.7 mΩ MAX. (VGS = 4.5 V, ID = 55 A) • High current rating	NEC 瑞萨	NEC
2SK3812-ZP	isc N-Channel MOSFET Transistor FEATURES ·Drain Current : ID= 110A@ TC=25℃ ·Drain Source Voltage : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1.8mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-	ISC 无锡固电	ISC
2SK3813	isc N-Channel MOSFET Transistor FEATURES ·Drain Current : ID= 60A@ TC=25℃ ·Drain Source Voltage : VDSS= 40V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 5.3mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D	ISC 无锡固电	ISC
2SK3813	SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION The 2SK3813 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance RDS(on)1 = 5.3 mΩ MAX. (VGS = 10 V, ID = 30 A) RDS(on)2 = 7.1 mΩ MAX. (VGS = 4.5 V, ID = 30 A) • Low Ciss: Ciss = 5500 pF	NEC 瑞萨	NEC
2SK3813	MOS Field Effect Transistor Features Low On-state resistance RDS(on)1 = 5.3 mΩ MAX. (VGS = 10 V, ID = 30 A) RDS(on)2 = 7.1 mΩ MAX. (VGS = 4.5 V, ID = 30 A) Low C iss: C iss = 5500 pF TYP.	KEXIN 科信电子	KEXIN
2SK3813	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3813 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance RDS(on)1 = 5.3 mΩ MAX. (VGS = 10 V, ID = 30 A) RDS(on)2 = 7.1 mΩ MAX. (VGS = 4.5 V, ID = 30 A)	RENESAS 瑞萨	RENESAS
2SK3813-Z	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3813 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance RDS(on)1 = 5.3 mΩ MAX. (VGS = 10 V, ID = 30 A) RDS(on)2 = 7.1 mΩ MAX. (VGS = 4.5 V, ID = 30 A)	RENESAS 瑞萨	RENESAS
2SK3813-Z	isc N-Channel MOSFET Transistor FEATURES ·Drain Current : ID= 60A@ TC=25℃ ·Drain Source Voltage : VDSS= 40V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 5.3mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D	ISC 无锡固电	ISC
2SK3813-Z	SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION The 2SK3813 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance RDS(on)1 = 5.3 mΩ MAX. (VGS = 10 V, ID = 30 A) RDS(on)2 = 7.1 mΩ MAX. (VGS = 4.5 V, ID = 30 A) • Low Ciss: Ciss = 5500 pF	NEC 瑞萨	NEC
2SK3814	isc N-Channel MOSFET Transistor FEATURES ·Drain Current : ID= 60A@ TC=25℃ ·Drain Source Voltage : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 8.7mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D	ISC 无锡固电	ISC
2SK3814	MOS Field Effect Transistor Features Low On-state resistance RDS(on)1 = 8.7mΩ MAX. (VGS = 10 V, ID = 30 A) RDS(on)2 = 10.5 mΩ MAX. (VGS = 4.5 V, ID = 30 A) Low C iss: C iss = 5450 pF TYP.	KEXIN 科信电子	KEXIN
2SK3814	SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION The 2SK3814 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance RDS(on)1 = 8.7 mΩ MAX. (VGS = 10 V, ID = 30 A) RDS(on)2 = 10.5 mΩ MAX. (VGS = 4.5 V, ID = 30 A) • Low Ciss: Ciss = 5450 pF	NEC 瑞萨	NEC
2SK3814	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3814 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance RDS(on)1 = 8.7 mΩ MAX. (VGS = 10 V, ID = 30 A) RDS(on)2 = 10.5 mΩ MAX. (VGS = 4.5 V, ID = 30 A)	RENESAS 瑞萨	RENESAS
2SK3814-TP	N-Channel Enhancement Mode MOSFET Application » Adaptor « Charger « Power management o SMPS Standby Power	TECHPUBLIC 台舟电子	TECHPUBLIC
2SK3814-Z	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3814 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance RDS(on)1 = 8.7 mΩ MAX. (VGS = 10 V, ID = 30 A) RDS(on)2 = 10.5 mΩ MAX. (VGS = 4.5 V, ID = 30 A)	RENESAS 瑞萨	RENESAS
2SK3814-Z	SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION The 2SK3814 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance RDS(on)1 = 8.7 mΩ MAX. (VGS = 10 V, ID = 30 A) RDS(on)2 = 10.5 mΩ MAX. (VGS = 4.5 V, ID = 30 A) • Low Ciss: Ciss = 5450 pF	NEC 瑞萨	NEC
2SK3814-Z	isc N-Channel MOSFET Transistor FEATURES ·Drain Current : ID= 60A@ TC=25℃ ·Drain Source Voltage : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 8.7mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D	ISC 无锡固电	ISC
2SK3815	General-Purpose Switching Device Applications General-Purpose Switching Device Applications Features • Low ON-resistance. • Ultrahigh-speed switching. • 4V drive. • Motor drive, DC / DC converter. • Avalanche resistance guarantee.	SANYO 三洋	SANYO
2SK3815L	isc N-Channel MOSFET Transistor FEATURES ·Drain Current : ID= 23A@ TC=25℃ ·Drain Source Voltage : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 55mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC	ISC 无锡固电	ISC
2SK3815S	isc N-Channel MOSFET Transistor FEATURES ·Drain Current : ID= 23A@ TC=25℃ ·Drain Source Voltage : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 55mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC	ISC 无锡固电	ISC
2SK3816	N-Channel Silicon MOSFET General-Purpose Switching Device General-Purpose Switching Device Applications Features • Low ON-resistance. • Ultrahigh-speed switching. • 4V drive. • Motor drive, DC / DC converter. • Avalanche resistance guarantee.	SANYO 三洋	SANYO
2SK3816	8-bit Withstand Voltage Microcontroller Features • ON-resistance RDS(on)1=20mΩ(typ.) • Input capacitance Ciss=1780pF(typ.) • 4V drive	ONSEMI 安森美半导体	ONSEMI
2SK3816-1E	8-bit Withstand Voltage Microcontroller Features • ON-resistance RDS(on)1=20mΩ(typ.) • Input capacitance Ciss=1780pF(typ.) • 4V drive	ONSEMI 安森美半导体	ONSEMI
2SK3816-DL-1E	8-bit Withstand Voltage Microcontroller Features • ON-resistance RDS(on)1=20mΩ(typ.) • Input capacitance Ciss=1780pF(typ.) • 4V drive	ONSEMI 安森美半导体	ONSEMI
2SK3816L	isc N-Channel MOSFET Transistor FEATURES ·Drain Current : ID= 40A@ TC=25℃ ·Drain Source Voltage : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 26mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC	ISC 无锡固电	ISC
2SK3816S	isc N-Channel MOSFET Transistor FEATURES ·Drain Current : ID= 40A@ TC=25℃ ·Drain Source Voltage : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 26mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC	ISC 无锡固电	ISC
2SK3817	N-Channel Silicon MOSFET General-Purpose Switching Device N-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • Low ON-resistance. • Ultrahigh-speed switching. • 4V drive. • Motor drive, DC / DC converter. • Avalanche resistance guarantee.	SANYO 三洋	SANYO
2SK3817L	isc N-Channel MOSFET Transistor FEATURES ·Drain Current : ID= 60A@ TC=25℃ ·Drain Source Voltage : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 15mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC	ISC 无锡固电	ISC
2SK3817S	isc N-Channel MOSFET Transistor FEATURES ·Drain Current : ID= 60A@ TC=25℃ ·Drain Source Voltage : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 15mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC	ISC 无锡固电	ISC
2SK3818	N-Channel Silicon MOSFET General-Purpose Switching Device • Low ON-resistance. • Ultrahigh-speed switching. • 4V drive. • Motor drive, DC / DC converter. • Avalanche resistance guarantee.	SANYO 三洋	SANYO
2SK3818L	isc N-Channel MOSFET Transistor FEATURES ·Drain Current : ID= 74A@ TC=25℃ ·Drain Source Voltage : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 13mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC	ISC 无锡固电	ISC
2SK3818S	isc N-Channel MOSFET Transistor FEATURES ·Drain Current : ID= 74A@ TC=25℃ ·Drain Source Voltage : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 13mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC	ISC 无锡固电	ISC
2SK3819	General-Purpose Switching Device Applications General-Purpose Switching Device Applications Features • Low ON-resistance. • 4V drive. • Ultrahigh-speed switching. • Motor drive, DC / DC converter. • Avalanche resistance guarantee.	SANYO 三洋	SANYO
2SK3819L	isc N-Channel MOSFET Transistor FEATURES ·Drain Current : ID= 14A@ TC=25℃ ·Drain Source Voltage : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 130mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-	ISC 无锡固电	ISC
2SK3819S	isc N-Channel MOSFET Transistor FEATURES ·Drain Current : ID= 14A@ TC=25℃ ·Drain Source Voltage : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 130mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-	ISC 无锡固电	ISC
2SK3811_15	SWITCHING N-CHANNEL POWER MOS FET 文件：274.83 Kbytes Page：10 Pages	RENESAS 瑞萨	RENESAS
2SK3812	SWITCHING N-CHANNEL POWER MOSFET	NEC 瑞萨	NEC
2SK3812_15	SWITCHING N-CHANNEL POWER MOS FET 文件：276.66 Kbytes Page：10 Pages	RENESAS 瑞萨	RENESAS
2SK3813_15	SWITCHING N-CHANNEL POWER MOS FET 文件：250.3 Kbytes Page：10 Pages	RENESAS 瑞萨	RENESAS
2SK3813-Z-E1-AZ	包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带描述：TRANSISTOR 分立半导体产品晶体管 - FET，MOSFET - 单个	RENESAS 瑞萨	RENESAS
2SK3814	N-Channel 60 V (D-S) MOSFET 文件：1.38223 Mbytes Page：7 Pages	VBSEMI 微碧半导体	VBSEMI
2SK3814(0)-Z-E1-AZ	包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带描述：TRANSISTOR 分立半导体产品晶体管 - FET，MOSFET - 单个	RENESAS 瑞萨	RENESAS
2SK3814_15	SWITCHING N-CHANNEL POWER MOS FET 文件：252.85 Kbytes Page：10 Pages	RENESAS 瑞萨	RENESAS
2SK3815	N-Channel Silicon MOSFET General-Purpose Switching Device Applications 文件：63.81 Kbytes Page：5 Pages	SANYO 三洋	SANYO
2SK3815_07	N-Channel Silicon MOSFET General-Purpose Switching Device Applications 文件：63.81 Kbytes Page：5 Pages	SANYO 三洋	SANYO
2SK3818	General-Purpose Switching Device Applications 文件：103.83 Kbytes Page：4 Pages	ONSEMI 安森美半导体	ONSEMI

2SK381产品属性

类型
描述
Vgs (off) (V) max.：
2.5
Nch/Pch：
Nch
VGSS (V)：
20
Number of Channels：
Single
Pch (W)：
84
VDSS (V) max.：
40
Application：
Low Voltage General Switching
ID (A)：
60
Mounting Type：
Through Hole
RDS (ON) (mohm) max. @4V or 4.5V：
7.1
Package Type：
MP-3/TO-251
RDS (ON) (mohm) max. @10V or 8V：
5.3
Production Status：
Non-promotion
Ciss (pF) typ.：
5500
Downloadable：
SPICE
QG (nC) typ.：
96

2SK381供应商更多...

更新时间：2026-5-14 14:20:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市凌旭科技有限公司	2SK3814-Z-E1-AZ	NEC	21+	TO252	1773		询价
深圳市拓亿芯电子有限公司	2SK3813-Z	NEC	25+	SOT252	9800	全新原装现货,假一赔十	询价
深圳市高捷芯城科技有限公司	2SK3816-1E	onsemi(安森美)	25+	-	18746	样件支持,可原厂排单订货!	询价
深圳市得捷芯城科技有限公司	2SK3816-1E	onsemi(安森美)	25+	-	18798	正规渠道,免费送样。支持账期,BOM一站式配齐	询价
深圳市中飞凌科技有限公司	2SK3812-ZP-EI-AY	RENESAS	26+	TO-263	360000	进口原装现货	询价
深圳市威雅利发展有限公司	2SK3812-ZP-E1	RENESAS	11+	TO-263	545	一级代理,专注军工、汽车、医疗、工业、新能源、电力	询价
深圳市诺美思科技有限公司	2SK3812-ZP-EI-AY	RENESAS		原厂封装	9800	原装进口公司现货假一赔百	询价
洪芯国际半导体（深圳）有限公司	2SK3816	ON	26+	原厂原封装	86720	全新原装正品价格最实惠假一赔百	询价
深圳市宇创芯科技有限公司	2SK3812-ZP-EI-AY	RENESAS	24+	TO-263	16900	原装正品现货支持实单	询价
深圳市豪迈兴电子有限公司	2SK3814-Z	NEC	24+		4326	公司原厂原装现货假一罚十!特价出售!强势库存!	询价

2SK381芯片相关品牌

2SK381规格书下载地址

2SK381参数引脚图相关

2SK381数据表相关新闻

2SMPP-02
优势渠道
2023-2-16
2SK3105-T1B-A找代理商上深圳百域芯科技
2SK3105-T1B-A找代理商上深圳百域芯科技芯片详细信息 Source Content uid: 2SK3484-Z-E1-AZ Manufacturer Part Number: 2SK3484-Z-E1-AZ Brand_Name: Renesas Rohs Code: Yes Part Life Cycle Code: Not Recommended Ihs Manufacturer: RENESAS ELECTRONICS CORP Part Package
2021-6-24
2SX1-T
2SX1-T，全新原装现货0755-82732291当天发货或门市自取. QQ：1755232575 /QQ：1157611585，微信号:87680558.
2021-2-10
2SK508G-K51-AE3-R
属性参数值商品目录结型场效应晶体管（JFET）连续漏极电流（Id）（25°C 时） 50mA 漏源电压（Vdss） 15V 类型 N 沟道最大功率耗散（Ta=25°C） 200mW
2020-11-12
2SK3313
2SK3313，全新原装当天发货或门市自取0755-82732291.
2020-3-28
2SK3591-01R
2SK3591-01R，全新原装当天发货或门市自取0755-82732291.
2020-3-28

DdatasheetPDF页码索引

P1
P2
P3
P4
P5
P6
P7
P8
P9
P10
P11
P12
P13
P14
P15
P16
P17
P18
P19
P20
P21
P22
P23
P24
P25
P26
P27
P28
P29
P30
P31
P32
P33
P34
P35
P36
P37
P38
P39
P40
P41
P42
P43
P44
P45
P46
P47
P48
P49
P50
P51
P52
P53
P54
P55
P56
P57
P58
P59
P60
P61
P62
P63
P64
P65
P66
P67
P68
P69
P70
P71
P72
P73
P74
P75
P76
P77
P78
P79
P80
P81
P82
P83
P84
P85
P86
P87
P88
P89
P90
P91
P92
P93
P94
P95
P96
P97
P98
P99
P100
P101
P102
P103
P104
P105
P106
P107
P108
P109

找IC，尽在114IC

2SK381价格

2SK381产品属性

2SK381供应商更多...

2SK381芯片相关品牌

2SK381规格书下载地址

2SK381参数引脚图相关

2SK381数据表相关新闻

2SMPP-02

2SK3105-T1B-A找代理商上深圳百域芯科技

2SX1-T

2SK508G-K51-AE3-R

2SK3313

2SK3591-01R

DdatasheetPDF页码索引