SWITCHING N-CHANNEL POWER MOSFET

DESCRIPTION The 2SK3813 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance RDS(on)1 = 5.3 mΩ MAX. (VGS = 10 V, ID = 30 A) RDS(on)2 = 7.1 mΩ MAX. (VGS = 4.5 V, ID = 30 A) • Low Ciss: Ciss = 5500 pF

MOS Field Effect Transistor

Features Low On-state resistance RDS(on)1 = 5.3 mΩ MAX. (VGS = 10 V, ID = 30 A) RDS(on)2 = 7.1 mΩ MAX. (VGS = 4.5 V, ID = 30 A) Low C iss: C iss = 5500 pF TYP.

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 60A@ TC=25℃ ·Drain Source Voltage : VDSS= 40V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 5.3mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3813 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance RDS(on)1 = 5.3 mΩ MAX. (VGS = 10 V, ID = 30 A) RDS(on)2 = 7.1 mΩ MAX. (VGS = 4.5 V, ID = 30 A)

Power MOSFETs

SWITCHING N-CHANNEL POWER MOSFET

DESCRIPTION\nThe 2SK3813 is N-channel MOS Field Effect Transistor designed for high current switching applications.FEATURES\n• Super low on-state resistance\nRDS(on)1 = 5.3 mΩ MAX. (VGS = 10 V, ID = 30 A)\nRDS(on)2 = 7.1 mΩ MAX. (VGS = 4.5 V, ID = 30 A)\n• Low Ciss: Ciss = 5500 pF TYP. • Super low on-state resistance\nRDS(on)1 = 5.3 mΩ MAX. (VGS = 10 V, ID = 30 A)\nRDS(on)2 = 7.1 mΩ MAX. (VGS = 4.5 V, ID = 30 A)\n• Low Ciss: Ciss = 5500 pF TYP.;

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3813 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance RDS(on)1 = 5.3 mΩ MAX. (VGS = 10 V, ID = 30 A) RDS(on)2 = 7.1 mΩ MAX. (VGS = 4.5 V, ID = 30 A)

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 60A@ TC=25℃ ·Drain Source Voltage : VDSS= 40V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 5.3mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D

SWITCHING N-CHANNEL POWER MOSFET

DESCRIPTION The 2SK3813 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance RDS(on)1 = 5.3 mΩ MAX. (VGS = 10 V, ID = 30 A) RDS(on)2 = 7.1 mΩ MAX. (VGS = 4.5 V, ID = 30 A) • Low Ciss: Ciss = 5500 pF

包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANSISTOR 分立半导体产品 晶体管 - FET，MOSFET - 单个

SWITCHING N-CHANNEL POWER MOS FET

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包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANSISTOR 分立半导体产品 晶体管 - FET，MOSFET - 单个

Power MOSFETs