位置:首页 > IC中文资料第637页 > 2SK3814
型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
---|---|---|---|---|
2SK3814 | SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION The 2SK3814 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance RDS(on)1 = 8.7 mΩ MAX. (VGS = 10 V, ID = 30 A) RDS(on)2 = 10.5 mΩ MAX. (VGS = 4.5 V, ID = 30 A) • Low Ciss: Ciss = 5450 pF | NEC 瑞萨 | ||
2SK3814 | MOS Field Effect Transistor Features Low On-state resistance RDS(on)1 = 8.7mΩ MAX. (VGS = 10 V, ID = 30 A) RDS(on)2 = 10.5 mΩ MAX. (VGS = 4.5 V, ID = 30 A) Low C iss: C iss = 5450 pF TYP. | KEXIN 科信电子 | ||
2SK3814 | isc N-Channel MOSFET Transistor FEATURES ·Drain Current : ID= 60A@ TC=25℃ ·Drain Source Voltage : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 8.7mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D | ISC 无锡固电 | ||
2SK3814 | MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3814 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance RDS(on)1 = 8.7 mΩ MAX. (VGS = 10 V, ID = 30 A) RDS(on)2 = 10.5 mΩ MAX. (VGS = 4.5 V, ID = 30 A) | RENESAS 瑞萨 | ||
2SK3814 | N-Channel 60 V (D-S) MOSFET 文件:1.38223 Mbytes Page:7 Pages | VBSEMI 微碧半导体 | ||
SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION The 2SK3814 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance RDS(on)1 = 8.7 mΩ MAX. (VGS = 10 V, ID = 30 A) RDS(on)2 = 10.5 mΩ MAX. (VGS = 4.5 V, ID = 30 A) • Low Ciss: Ciss = 5450 pF | NEC 瑞萨 | |||
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3814 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance RDS(on)1 = 8.7 mΩ MAX. (VGS = 10 V, ID = 30 A) RDS(on)2 = 10.5 mΩ MAX. (VGS = 4.5 V, ID = 30 A) | RENESAS 瑞萨 | |||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current : ID= 60A@ TC=25℃ ·Drain Source Voltage : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 8.7mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D | ISC 无锡固电 | |||
包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:TRANSISTOR 分立半导体产品 晶体管 - FET,MOSFET - 单个 | ETC 知名厂家 | ETC | ||
包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:TRANSISTOR 分立半导体产品 晶体管 - FET,MOSFET - 单个 | ETC 知名厂家 | ETC | ||
SWITCHING N-CHANNEL POWER MOS FET 文件:252.85 Kbytes Page:10 Pages | RENESAS 瑞萨 |
2SK3814产品属性
- 类型
描述
- 型号
2SK3814
- 功能描述
MOSFET N-CH 60V MP-3/TO-251
- RoHS
是
- 类别
分离式半导体产品 >> FET - 单
- 系列
-
- 标准包装
1,000
- 系列
MESH OVERLAY™ FET
- 型
MOSFET N 通道,金属氧化物 FET
- 特点
逻辑电平门
- 漏极至源极电压(Vdss)
200V 电流 - 连续漏极(Id) @ 25°
- C
18A 开态Rds(最大)@ Id, Vgs @ 25°
- C
180 毫欧 @ 9A,10V Id 时的
- Vgs(th)(最大)
4V @ 250µA 闸电荷(Qg) @
- Vgs
72nC @ 10V 输入电容(Ciss) @
- Vds
1560pF @ 25V 功率 -
- 最大
40W
- 安装类型
通孔
- 封装/外壳
TO-220-3 整包
- 供应商设备封装
TO-220FP
- 包装
管件
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
NEC |
22+ |
SOT252 |
100000 |
代理渠道/只做原装/可含税 |
|||
NEC |
24+ |
NA/ |
5150 |
原装现货,当天可交货,原型号开票 |
|||
NEC |
24+ |
TO252 |
880000 |
明嘉莱只做原装正品现货 |
|||
NEC |
21+ |
TO252 |
1773 |
||||
Renesas |
1822+ |
TO-252 |
9852 |
只做原装正品假一赔十为客户做到零风险!! |
|||
Renesas |
2024 |
TO-252 |
13500 |
16余年资质 绝对原盒原盘代理渠道 更多数量 |
|||
RENESAS/瑞萨 |
新年份 |
TO-252 |
69850 |
一级代理原装正品现货,支持实单! |
|||
NEC |
22+ |
TO252 |
12245 |
现货,原厂原装假一罚十! |
|||
NEC |
25+23+ |
TO252 |
12834 |
绝对原装正品全新进口深圳现货 |
|||
NEC |
24+ |
TO-251 |
8866 |
2SK3814规格书下载地址
2SK3814参数引脚图相关
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- 5000
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- 2SK3844(Q)
- 2SK3842(TE24L,Q)
- 2SK3832
- 2SK3831
- 2SK3830
- 2SK383
- 2SK3829
- 2SK3828
- 2SK3827
- 2SK3826
- 2SK3825
- 2SK3824
- 2SK3823
- 2SK3822
- 2SK3821-E
- 2SK3821-DL-E
- 2SK3821
- 2SK3820-DL-E
- 2SK3820-DL-1E
- 2SK3820
- 2SK382
- 2SK381D
- 2SK3819-DL-E
- 2SK3819
- 2SK3818-DL-E
- 2SK3818
- 2SK3817-DL-E
- 2SK3817
- 2SK3816-DL-E
- 2SK3816-DL-1E
- 2SK3816
- 2SK3815-DL-E
- 2SK3815
- 2SK3814-Z-E1-AZ
- 2SK3814-Z-AZ
- 2SK3814-AZ
- 2SK3813-Z-AZ
- 2SK3813-AZ
- 2SK3813
- 2SK3812-ZP-E1-AZ
- 2SK3812-ZP-E1-AY
- 2SK3812-ZP-E1-A
- 2SK3812-ZP-A E2
- 2SK3812
- 2SK3811-ZP-E1-AY
- 2SK3811-AZ-ZP
- 2SK3811
- 2SK381
- 2SK3801 LF142
- 2SK3801
- 2SK3800VR
- 2SK3800VL
- 2SK3800
- 2SK3799(STA4,Q,M)
- 2SK3799(STA4,Q)
- 2SK3799(Q,M)
- 2SK3799(Q)
- 2SK3799
- 2SK3798(Q,M)
- 2SK3798(Q)
- 2SK3798
- 2SK3797(Q,M)
- 2SK3797
- 2SK3796
- 2SK3794
- 2SK3793
- 2SK3783
- 2SK3782
- 2SK377M
- 2SK377L
- 2SK377K
- 2SK377J
- 2SK377
- 2SK3767
2SK3814数据表相关新闻
2SMPP-02
优势渠道
2023-2-162SK3105-T1B-A找代理商上深圳百域芯科技
2SK3105-T1B-A找代理商上深圳百域芯科技 芯片详细信息 Source Content uid: 2SK3484-Z-E1-AZ Manufacturer Part Number: 2SK3484-Z-E1-AZ Brand_Name: Renesas Rohs Code: Yes Part Life Cycle Code: Not Recommended Ihs Manufacturer: RENESAS ELECTRONICS CORP Part Package
2021-6-242SX1-T
2SX1-T,全新原装现货0755-82732291当天发货或门市自取. QQ:1755232575 /QQ:1157611585,微信号:87680558.
2021-2-102SK508G-K51-AE3-R
属性 参数值 商品目录 结型场效应晶体管(JFET) 连续漏极电流(Id)(25°C 时) 50mA 漏源电压(Vdss) 15V 类型 N 沟道 最大功率耗散(Ta=25°C) 200mW
2020-11-122SK3313
2SK3313,全新原装当天发货或门市自取0755-82732291.
2020-3-282SK3591-01R
2SK3591-01R,全新原装当天发货或门市自取0755-82732291.
2020-3-28
DdatasheetPDF页码索引
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