型号 功能描述 生产厂家&企业 LOGO 操作
2SK3813-Z

SWITCHING N-CHANNEL POWER MOSFET

DESCRIPTION The 2SK3813 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance RDS(on)1 = 5.3 mΩ MAX. (VGS = 10 V, ID = 30 A) RDS(on)2 = 7.1 mΩ MAX. (VGS = 4.5 V, ID = 30 A) • Low Ciss: Ciss = 5500 pF

NEC

瑞萨

2SK3813-Z

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 60A@ TC=25℃ ·Drain Source Voltage : VDSS= 40V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 5.3mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D

ISC

无锡固电

2SK3813-Z

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3813 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance RDS(on)1 = 5.3 mΩ MAX. (VGS = 10 V, ID = 30 A) RDS(on)2 = 7.1 mΩ MAX. (VGS = 4.5 V, ID = 30 A)

RENESAS

瑞萨

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3813 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance RDS(on)1 = 5.3 mΩ MAX. (VGS = 10 V, ID = 30 A) RDS(on)2 = 7.1 mΩ MAX. (VGS = 4.5 V, ID = 30 A)

RENESAS

瑞萨

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 60A@ TC=25℃ ·Drain Source Voltage : VDSS= 40V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 5.3mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D

ISC

无锡固电

SWITCHING N-CHANNEL POWER MOSFET

DESCRIPTION The 2SK3813 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance RDS(on)1 = 5.3 mΩ MAX. (VGS = 10 V, ID = 30 A) RDS(on)2 = 7.1 mΩ MAX. (VGS = 4.5 V, ID = 30 A) • Low Ciss: Ciss = 5500 pF

NEC

瑞萨

MOS Field Effect Transistor

Features Low On-state resistance RDS(on)1 = 5.3 mΩ MAX. (VGS = 10 V, ID = 30 A) RDS(on)2 = 7.1 mΩ MAX. (VGS = 4.5 V, ID = 30 A) Low C iss: C iss = 5500 pF TYP.

KEXIN

科信电子

包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:TRANSISTOR 分立半导体产品 晶体管 - FET,MOSFET - 单个

ETC

知名厂家

2SK3813-Z产品属性

  • 类型

    描述

  • 型号

    2SK3813-Z

  • 制造商

    Renesas Electronics Corporation

  • 功能描述

    Trans MOSFET N-CH 40V 60A 3-Pin(2+Tab) TO-252 Cut Tape

更新时间:2025-8-14 23:01:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
RENESAS/瑞萨
24+
NA/
100
优势代理渠道,原装正品,可全系列订货开增值税票
NEC
06+PBF
TO-252
42500
现货
NEC
22+
SOT252
100000
代理渠道/只做原装/可含税
NEC
2024
SOT252
58209
16余年资质 绝对原盒原盘代理渠道 更多数量
RENESAS/瑞萨
2022+
TO-252
30000
进口原装现货供应,原装 假一罚十
NEC
23+
SOT252
9800
全新原装现货,假一赔十
NEC
24+
TO-252
42500
只做原厂渠道 可追溯货源
NEC
2014+
356
公司现货库存
NEC
24+
TO-252
8866
NEC
23+
SOT-252
20000
原厂授权代理,海外优势订货渠道。可提供大量库存,详

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