MINI PACKAGE SERIES

Application General Purpose > Low Noise High Voltage High Current High Current Low Impedance Low Noise (NEW Audio Drive & Out NEW High B Muting & SW FM RF, MIX OSC AM CONV. FM/AM IF AM FF, CONV IF FM/AM RF, MIX OSC Application General Purpose High IYfsl Low Noise Analog SW & Ge

Effect Transistor Silicon N Channel Junction Type For Audio Amplifier, Analog-Switch, Constant Current and Impedance Converter Applications

N CHANNEL JUNCTION TYPE (FOR AUDIO AMPLIFIER, ANALOG SWITCH, CONSTANT CURRENT AND IMPEDANCE CONVERTER APPLICATIONS)

文件：217.95 Kbytes Page：4 Pages

Silicon N Channel Junction Type For Audio Amplifier, Analog-Switch, Constant Current and Impedance Converter Applications

文件：648.25 Kbytes Page：5 Pages

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

DESCRIPTION The 2SK3663 is a switching device which can be driven directly by a 2.5 V power source. The 2SK3663 features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. FEATURES • 2.5 V driv

MOS FIELD EFFECT TRANSISTOR

N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION The 2SK3663 is a switching device which can be driven directly by a 2.5 V power source. The 2SK3663 features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power sw

N-Channel 20 V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • Typical ESD Protection 2000 V HBM • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Portable Devices - Load Switch - Battery Switch • Load Switch for Motors, Relays and

MOS FIELD EFFECT TRANSISTOR

N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION The 2SK3664 is a switching device, which can be driven directly by a 2.5 V power source. The device features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power sw

N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

DESCRIPTION The 2SK3664 is a switching device, which can be driven directly by a 2.5 V power source. ​​​​​​​The device features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. FEATURES • 2.5

Silicon N Channel MOS Type Switching Regulator Applications

• Low drain-source ON resistance: RDS (ON)= 0.74Ω(typ.) • High forward transfer admittance: |Yfs| = S (typ.) • Low leakage current: IDSS= 100 μA (VDS= 600 V) • Enhancement-mode: Vth= 2.0~4.0 V (VDS= 10 V, ID= 1 mA)

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

SWITCHING N-CHANNEL POWER MOSFET

DESCRIPTION The 2SK3668 is N-channel DMOS FET device that features a low on-state resistance, low charge and excellent switching characteristics, designed for high voltage applications such as high intensity discharge lamp drive. FEATURES • Low gate charge QG = 26 nC TYP. (VDD = 320 V, VGS

MOS Field Effect Transistor

Features ● Low gate charge QG = 26 nC TYP. (VDD = 320 V, VGS = 10 V, ID = 10 A) ● Gate voltage rating: ±30 V ● Low on-state resistance RDS(on) = 0.55 Ω MAX. (VGS = 10 V, ID = 5.0 A) ● Surface mount package available

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3668 is N-channel DMOS FET device that features a low on-state resistance, low charge and excellent switching characteristics, designed for high voltage applications such as high intensity discharge lamp drive. FEATURES • Low gate c

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3668 is N-channel DMOS FET device that features a low on-state resistance, low charge and excellent switching characteristics, designed for high voltage applications such as high intensity discharge lamp drive. FEATURES • Low gate c

SWITCHING N-CHANNEL POWER MOSFET

DESCRIPTION The 2SK3668 is N-channel DMOS FET device that features a low on-state resistance, low charge and excellent switching characteristics, designed for high voltage applications such as high intensity discharge lamp drive. FEATURES • Low gate charge QG = 26 nC TYP. (VDD = 320 V, VGS

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

Silicon N Channel Junction Type For Audio Amplifier, Analog-Switch, Constant Current and Impedance Converter Applications

文件：648.25 Kbytes Page：5 Pages

Switching Regulator, DC−DC Converter, Motor Drive Applications

文件：203.31 Kbytes Page：6 Pages

N-Channel 60-V (D-S) MOSFET

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Switching Regulator, DC-DC Converter, Motor Drive Applications

文件：223.66 Kbytes Page：6 Pages

Silicon N Channel MOS Type Switching Regulator, DC−DC Converter, Motor Drive

文件：188.98 Kbytes Page：6 Pages

Silicon N Channel MOS Type Switching Regulator, DC−DC Converter, Motor Drive

文件：188.98 Kbytes Page：6 Pages

Switching Regulator, DC−DC Converter, Motor Drive Applications

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Nch Single Power Mosfet 20V 0.5A 570Mohm Ssp/Sc-70

N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

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Power MOSFETs

N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

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N-Channel JFET

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N-CHANNEL JUNCTIN SILICON FET

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Low-Frequency General-Purpose Amplifier, Impedance Converter Applications

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Low-Frequency General-Purpose Amplifier, Impedance Converter Applications

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Low-Frequency General-Purpose Amplifier, Impedance Converter Applications

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N-Channel JFET

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Low-Frequency General-Purpose Amplifier, Impedance Converter Applications

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N-Channel JFET

文件：728.22 Kbytes Page：4 Pages

封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：散装 描述：JFET N-CH 10MA 200MW 3CP 分立半导体产品 晶体管 - JFET

封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：卷带（TR） 描述：JFET N-CH 30V 0.2W CP 分立半导体产品 晶体管 - JFET

Low-Frequency General-Purpose Amplifier, Impedance Converter Applications

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N-CHANNEL JUNCTIN SILICON FET

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Switching Regulator Applications

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Silicon N Channel MOS Type Switching Regulator Applications

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Switching Regulator Applications

文件：205.83 Kbytes Page：6 Pages

Switching Regulator, Audio Amplifier and Motor Drive Applications

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Silicon N-Channel MOS Type Switching Regulator, Audio Amplifier and Motor Drive Applications

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Switching Regulators, for Audio Amplifier and Motor Drive Applications

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Silicon N-Channel MOS Type Switching Regulator, Audio Amplifier and Motor Drive Applications

文件：170.07 Kbytes Page：6 Pages

Switching Regulator, Audio Amplifier and Motor Drive Applications

文件：199.78 Kbytes Page：6 Pages