DESCRIPTION

The 2SK3668 is N-channel DMOS FET device that features a low on-state resistance, low charge and excellent switching characteristics, designed for high voltage applications such as high intensity discharge lamp drive.

FEATURES

• Low gate charge

QG = 26 nC TYP. (VDD = 320 V, VGS = 10 V, ID = 10 A)

• Gate voltage rating: ±30 V

• Low on-state resistance

RDS(on) = 0.55 Ω MAX. (VGS = 10 V, ID = 5.0 A)

• Surface mount package available