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2SK35价格

参考价格：￥0.3250

型号：2SK3503-T1 品牌：NEC 备注：这里有2SK35多少钱，2025年最近7天走势，今日出价，今日竞价，2SK35批发/采购报价，2SK35行情走势销售排行榜，2SK35报价。

型号	功能描述	生产厂家企业	LOGO
2SK3501-01	N-CHANNEL SILICON POWER MOSFET Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters	Fuji 富士通	Fuji
2SK3502	N CHANNEL SILICON POWER MOSET ■ Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof ■ Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters	Fuji 富士通	Fuji
2SK3502-01MR	N-CHANNEL SILICON POWER MOSFET ■ Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof ■ Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters	Fuji 富士通	Fuji
2SK3503	N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING DESCRIPTION The 2SK3503 is an N-channel vertical MOS FET. Because it can be driven by a voltage as low as 1.5 V and it is not necessary to consider a drive current, this FET is ideal as an actuator for low-current portable systems such as headphone stereos and video cameras. FEATURES • Automati	NEC 瑞萨	NEC
2SK3503	N-Channel MOSFET ■ Features ● VDS (V) = 16V ● ID = 100 mA (VGS = 1.5V) ● RDS(ON)	KEXIN 科信电子	KEXIN
2SK3503	MOS FIELD EFFECT TRANSISTOR N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING DESCRIPTION The 2SK3503 is an N-channel vertical MOS FET. Because it can be driven by a voltage as low as 1.5 V and it is not necessary to consider a drive current, this FET is ideal as an actuator for low-current portable syst	RENESAS 瑞萨	RENESAS
2SK3506	Bipolar Small-Signal Transistors MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf	TOSHIBA 东芝	TOSHIBA
2SK3506	TOSHIBA Field Effect Transistor Silicon N Channel MOS Type Relay Drive and DC-DC Converter Applications Motor Drive Applications • Low drain-source ON resistance: RDS (ON) = 16 mΩ (typ.) • High forward transfer admittance: \|Yfs\| = 26 S (typ.) • Low leakage current: IDSS = 100 µA (max) (VDS = 30 V) • Enhancement-model: Vth = 1.5 to 3.0 V (VDS = 10 V,	TOSHIBA 东芝	TOSHIBA
2SK3507	SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION The 2SK3507 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, designed for low voltage high current applications such as DC/DC converter with synchronous rectifier FEATURES • 4.5 V drive available • Low on-state resistance	NEC 瑞萨	NEC
2SK3507	MOS Field Effect Transistor FEATURES ● 4.5 V drive available ● Low on-state resistance RDS(on)1 = 45 mΩ MAX. (VGS = 10 V, ID = 11 A) ● Low gate charge QG = 8.5 nC TYP. (VDD = 24 V, VGS = 10 V, ID = 22 A) ● Built-in G-S protection diode ● Surface mount package available	KEXIN 科信电子	KEXIN
2SK3507	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3507 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. FEATURES • 4.5 V	RENESAS 瑞萨	RENESAS
2SK3507-ZK	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3507 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. FEATURES • 4.5 V	RENESAS 瑞萨	RENESAS
2SK3507-ZK	SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION The 2SK3507 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, designed for low voltage high current applications such as DC/DC converter with synchronous rectifier FEATURES • 4.5 V drive available • Low on-state resistance	NEC 瑞萨	NEC
2SK3510	SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION The 2SK3510 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance: RDS(on) = 8.5 mΩ MAX. (VGS = 10 V, ID = 42 A) • Low Ciss: Ciss = 8500 pF TYP. • Built-in gate protection diode	NEC 瑞萨	NEC
2SK3510	MOS Field Effect Transistor Features ● Super low on-state resistance: RDS(on) = 8.5 m MAX. (VGS = 10 V, ID = 42 A) ● Low Ciss: Ciss = 8500 pF TYP. ● Built-in gate protection diode	KEXIN 科信电子	KEXIN
2SK3510	MOS FIELD EFFECT TRANSISTOR SWITCHING CHANNEL POWER MOS FET DESCRIPTION The 2SK3510 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance: RDS(on) = 8.5mΩ MAX. (VGS = 10 V, ID = 42 A) • Low Ciss: Ciss = 8500 pF TYP. • Built-in gate pro	RENESAS 瑞萨	RENESAS
2SK3510-S	MOS FIELD EFFECT TRANSISTOR SWITCHING CHANNEL POWER MOS FET DESCRIPTION The 2SK3510 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance: RDS(on) = 8.5mΩ MAX. (VGS = 10 V, ID = 42 A) • Low Ciss: Ciss = 8500 pF TYP. • Built-in gate pro	RENESAS 瑞萨	RENESAS
2SK3510-S	SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION The 2SK3510 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance: RDS(on) = 8.5 mΩ MAX. (VGS = 10 V, ID = 42 A) • Low Ciss: Ciss = 8500 pF TYP. • Built-in gate protection diode	NEC 瑞萨	NEC
2SK3510-Z	SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION The 2SK3510 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance: RDS(on) = 8.5 mΩ MAX. (VGS = 10 V, ID = 42 A) • Low Ciss: Ciss = 8500 pF TYP. • Built-in gate protection diode	NEC 瑞萨	NEC
2SK3510-Z	MOS FIELD EFFECT TRANSISTOR SWITCHING CHANNEL POWER MOS FET DESCRIPTION The 2SK3510 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance: RDS(on) = 8.5mΩ MAX. (VGS = 10 V, ID = 42 A) • Low Ciss: Ciss = 8500 pF TYP. • Built-in gate pro	RENESAS 瑞萨	RENESAS
2SK3510-ZJ	MOS FIELD EFFECT TRANSISTOR SWITCHING CHANNEL POWER MOS FET DESCRIPTION The 2SK3510 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance: RDS(on) = 8.5mΩ MAX. (VGS = 10 V, ID = 42 A) • Low Ciss: Ciss = 8500 pF TYP. • Built-in gate pro	RENESAS 瑞萨	RENESAS
2SK3510-ZJ	SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION The 2SK3510 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance: RDS(on) = 8.5 mΩ MAX. (VGS = 10 V, ID = 42 A) • Low Ciss: Ciss = 8500 pF TYP. • Built-in gate protection diode	NEC 瑞萨	NEC
2SK3511	SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION The 2SK3511 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance: RDS(on) = 12.5 mΩ MAX. (VGS = 10 V, ID = 42 A) • Low Ciss: Ciss = 5900 pF TYP. • Built-in gate protection diode	NEC 瑞萨	NEC
2SK3511	MOS Field Effect Transistor Features ● Super low on-state resistance: RDS(on) = 12.5 mΩ MAX. (VGS = 10 V, ID = 42 A) ● Low Ciss: Ciss = 5900 pF TYP. ● Built-in gate protection diode	KEXIN 科信电子	KEXIN
2SK3511	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3511 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance: RDS(on) = 12.5mΩ MAX. (VGS = 10 V, ID = 42 A) • Low Ciss: Ciss = 5900 pF TYP. • Built-in gate	RENESAS 瑞萨	RENESAS
2SK3511-S	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3511 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance: RDS(on) = 12.5mΩ MAX. (VGS = 10 V, ID = 42 A) • Low Ciss: Ciss = 5900 pF TYP. • Built-in gate	RENESAS 瑞萨	RENESAS
2SK3511-S	SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION The 2SK3511 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance: RDS(on) = 12.5 mΩ MAX. (VGS = 10 V, ID = 42 A) • Low Ciss: Ciss = 5900 pF TYP. • Built-in gate protection diode	NEC 瑞萨	NEC
2SK3511-Z	SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION The 2SK3511 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance: RDS(on) = 12.5 mΩ MAX. (VGS = 10 V, ID = 42 A) • Low Ciss: Ciss = 5900 pF TYP. • Built-in gate protection diode	NEC 瑞萨	NEC
2SK3511-Z	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3511 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance: RDS(on) = 12.5mΩ MAX. (VGS = 10 V, ID = 42 A) • Low Ciss: Ciss = 5900 pF TYP. • Built-in gate	RENESAS 瑞萨	RENESAS
2SK3511-ZJ	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3511 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance: RDS(on) = 12.5mΩ MAX. (VGS = 10 V, ID = 42 A) • Low Ciss: Ciss = 5900 pF TYP. • Built-in gate	RENESAS 瑞萨	RENESAS
2SK3511-ZJ	SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION The 2SK3511 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance: RDS(on) = 12.5 mΩ MAX. (VGS = 10 V, ID = 42 A) • Low Ciss: Ciss = 5900 pF TYP. • Built-in gate protection diode	NEC 瑞萨	NEC
2SK3512	N-CHANNEL SILICON POWER MOSFET Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters	Fuji 富士通	Fuji
2SK3512-01L	N-CHANNEL SILICON POWER MOSFET Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters	Fuji 富士通	Fuji
2SK3512-S	N-CHANNEL SILICON POWER MOSFET Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters	Fuji 富士通	Fuji
2SK3512-SJ	N-CHANNEL SILICON POWER MOSFET Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters	Fuji 富士通	Fuji
2SK3513-01L	N-CHANNEL SILICON POWER MOSFET Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters	Fuji 富士通	Fuji
2SK3513-01S	N-CHANNEL SILICON POWER MOSFET Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters	Fuji 富士通	Fuji
2SK3513-01SJ	N-CHANNEL SILICON POWER MOSFET Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters	Fuji 富士通	Fuji
2SK3514	N CHANNEL SILICON POWER MOSFET Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters	Fuji 富士通	Fuji
2SK3514-01	N CHANNEL SILICON POWER MOSFET Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters	Fuji 富士通	Fuji
2SK3515	N CHANNEL SILICON POWER MOSFET Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters	Fuji 富士通	Fuji
2SK3515-01MR	N CHANNEL SILICON POWER MOSFET Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters	Fuji 富士通	Fuji
2SK3516-01L	N-CHANNEL SILICON POWER MOSFET Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters	Fuji 富士通	Fuji
2SK3516-01S	N-CHANNEL SILICON POWER MOSFET Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters	Fuji 富士通	Fuji
2SK3516-01SJ	N-CHANNEL SILICON POWER MOSFET Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters	Fuji 富士通	Fuji
2SK3517-01	N-CHANNEL SILICON POWER MOSFET Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters	Fuji 富士通	Fuji
2SK3518-01MR	N-CHANNEL SILICON POWER MOSFET Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters	Fuji 富士通	Fuji
2SK3519	N CHANNEL SILICON POWER MOSFET Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters	Fuji 富士通	Fuji
2SK3519-01	N CHANNEL SILICON POWER MOSFET Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters	Fuji 富士通	Fuji
2SK3520	2SK3520 Features 1. High speed switching 2. Low on-resistance 3. No secondary breadown 4. Low driving power 5. Avalanche-proof	Fuji 富士通	Fuji
2SK3520-01MR	N CHANNEL SILICON POWER MOSFET Features 1. High speed switching 2. Low on-resistance 3. No secondary breadown 4. Low driving power 5. Avalanche-proof	Fuji 富士通	Fuji
2SK3521	N-CHANNEL SILICON POWER MOSFET Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-p Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters	Fuji 富士通	Fuji
2SK3521-01L	N-CHANNEL SILICON POWER MOSFET Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-p Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters	Fuji 富士通	Fuji
2SK3521-01S	N-CHANNEL SILICON POWER MOSFET Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-p Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters	Fuji 富士通	Fuji
2SK3521-01SJ	N-CHANNEL SILICON POWER MOSFET Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-p Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters	Fuji 富士通	Fuji
2SK3522	N-CHANNEL SILICON POWER MOSFET Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof	Fuji 富士通	Fuji
2SK3522	isc N-Channel MOSFET Transistor FEATURES · Drain Current -ID= 21A@ TC=25℃ · Drain Source Voltage -VDSS= 500V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.26Ω(Max)@VGS= 10V APPLICATIONS · DC-DC converters · Switching regulators · UPS	ISC 无锡固电	ISC
2SK3522-01	N-CHANNEL SILICON POWER MOSFET Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof	Fuji 富士通	Fuji
2SK3523-01R	POWER MOSFET Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters	Fuji 富士通	Fuji
2SK3524	N-CHANNE SILLCON POWER MOSFET Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters	Fuji 富士通	Fuji

2SK35产品属性

类型
描述
型号
2SK35
制造商
HITACHI

2SK35供应商更多...

更新时间：2025-12-24 23:01:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市得捷芯城科技有限公司	2SK3539GOL	PANASON/松下	24+	NA/	6250	原装现货,当天可交货,原型号开票	询价
深圳市纳艾斯科技有限公司	2SK353900L	PANASON	24+	SOT323	80000	只做自己库存全新原装进口正品假一赔百可开13%增	询价
深圳市明嘉莱科技有限公司	2SK3539G0L	PANASONIC/松下	25+	SOT323	860000	明嘉莱只做原装正品现货	询价
中天科工半导体（深圳）有限公司	2SK3539G	PANASONIC/松下	20+	SMini3-F2-B	36800	原装优势主营型号-可开原型号增税票	询价
深圳市华睿芯科技有限公司	2SK3539G0L	PANASONIC	24+	SOT323	20000	全新原厂原装，进口正品现货，正规渠道可含税！！	询价
深圳市诺美思科技有限公司	2SK353900L	PANASONIC		原厂封装	9800	原装进口公司现货假一赔百	询价
深圳市坤融电子科技有限公司	2SK3539G	PANASONIC/松下	2025+	SMini3-F2-B	5000	原装进口价格优请找坤融电子!	询价
深圳市一线半导体有限公司	2SK3539G0L	Panasonic-SSG	24+	S-Mini3P	7500		询价
深圳市科恒伟业电子有限公司	2SK3539G0L	PANASONIC/松下	2450+	SOT323	6540	只做原装正品现货或订货!终端客户免费申请样品!	询价
深圳诚思涵科技有限公司	2SK3539G	Panasonic	19+	SMini3-F2	200000		询价

2SK35芯片相关品牌

2SK35规格书下载地址

2SK35参数引脚图相关

2SK35数据表相关新闻

2SMPP-02
优势渠道
2023-2-16
2SK3105-T1B-A找代理商上深圳百域芯科技
2SK3105-T1B-A找代理商上深圳百域芯科技芯片详细信息 Source Content uid: 2SK3484-Z-E1-AZ Manufacturer Part Number: 2SK3484-Z-E1-AZ Brand_Name: Renesas Rohs Code: Yes Part Life Cycle Code: Not Recommended Ihs Manufacturer: RENESAS ELECTRONICS CORP Part Package
2021-6-24
2SK3105-T1B-A找代理商上深圳百域芯科技
2SK3105-T1B-A找代理商上深圳百域芯科技芯片详细信息 Source Content uid: 2SK3105-T1B-A Manufacturer Part Number: 2SK3105-T1B-A Brand_Name: Renesas Pbfree Code: Yes Rohs Code: Yes Part Life Cycle Code: Obsolete Ihs Manufacturer: RENESAS ELECTRONICS CORP P
2021-6-24
2SK508G-K51-AE3-R
属性参数值商品目录结型场效应晶体管（JFET）连续漏极电流（Id）（25°C 时） 50mA 漏源电压（Vdss） 15V 类型 N 沟道最大功率耗散（Ta=25°C） 200mW
2020-11-12
2SK3313
2SK3313，全新原装当天发货或门市自取0755-82732291.
2020-3-28
2SK3591-01R
2SK3591-01R，全新原装当天发货或门市自取0755-82732291.
2020-3-28

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2SK35价格

2SK35产品属性

2SK35供应商更多...

2SK35芯片相关品牌

2SK35规格书下载地址

2SK35参数引脚图相关

2SK35数据表相关新闻

2SMPP-02

2SK3105-T1B-A找代理商上深圳百域芯科技

2SK3105-T1B-A找代理商上深圳百域芯科技

2SK508G-K51-AE3-R

2SK3313

2SK3591-01R

DdatasheetPDF页码索引