DESCRIPTION

The 2SK3507 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, designed for low voltage high current applications such as DC/DC converter with synchronous rectifier

FEATURES

• 4.5 V drive available

• Low on-state resistance

RDS(on)1 = 45 mΩ MAX. (VGS = 10 V, ID = 11 A)

• Low gate charge

QG = 8.5 nC TYP. (VDD = 24 V, VGS = 10 V, ID = 22 A)

• Built-in G-S protection diode

• Surface mount package available