型号 功能描述 生产厂家 企业 LOGO 操作
2SK3510-Z

SWITCHING N-CHANNEL POWER MOSFET

DESCRIPTION The 2SK3510 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance: RDS(on) = 8.5 mΩ MAX. (VGS = 10 V, ID = 42 A) • Low Ciss: Ciss = 8500 pF TYP. • Built-in gate protection diode

NEC

瑞萨

2SK3510-Z

MOS FIELD EFFECT TRANSISTOR

SWITCHING CHANNEL POWER MOS FET DESCRIPTION The 2SK3510 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance: RDS(on) = 8.5mΩ MAX. (VGS = 10 V, ID = 42 A) • Low Ciss: Ciss = 8500 pF TYP. • Built-in gate pro

RENESAS

瑞萨

2SK3510-Z

isc N-Channel MOSFET Transistor

文件:400.96 Kbytes Page:2 Pages

ISC

无锡固电

MOS Field Effect Transistor

Features ● Super low on-state resistance: RDS(on) = 8.5 m MAX. (VGS = 10 V, ID = 42 A) ● Low Ciss: Ciss = 8500 pF TYP. ● Built-in gate protection diode

KEXIN

科信电子

SWITCHING N-CHANNEL POWER MOSFET

DESCRIPTION The 2SK3510 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance: RDS(on) = 8.5 mΩ MAX. (VGS = 10 V, ID = 42 A) • Low Ciss: Ciss = 8500 pF TYP. • Built-in gate protection diode

NEC

瑞萨

MOS FIELD EFFECT TRANSISTOR

SWITCHING CHANNEL POWER MOS FET DESCRIPTION The 2SK3510 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance: RDS(on) = 8.5mΩ MAX. (VGS = 10 V, ID = 42 A) • Low Ciss: Ciss = 8500 pF TYP. • Built-in gate pro

RENESAS

瑞萨

isc N-Channel MOSFET Transistor

文件:332.79 Kbytes Page:2 Pages

ISC

无锡固电

SWITCHING N-CHANNEL POWER MOSFET

DESCRIPTION The 2SK3510 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance: RDS(on) = 8.5 mΩ MAX. (VGS = 10 V, ID = 42 A) • Low Ciss: Ciss = 8500 pF TYP. • Built-in gate protection diode

NEC

瑞萨

MOS FIELD EFFECT TRANSISTOR

SWITCHING CHANNEL POWER MOS FET DESCRIPTION The 2SK3510 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance: RDS(on) = 8.5mΩ MAX. (VGS = 10 V, ID = 42 A) • Low Ciss: Ciss = 8500 pF TYP. • Built-in gate pro

RENESAS

瑞萨

isc N-Channel MOSFET Transistor

文件:401.1 Kbytes Page:2 Pages

ISC

无锡固电

SWITCHING N-CHANNEL POWER MOSFET

DESCRIPTION The 2SK3510 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance: RDS(on) = 8.5 mΩ MAX. (VGS = 10 V, ID = 42 A) • Low Ciss: Ciss = 8500 pF TYP. • Built-in gate protection diode

NEC

瑞萨

更新时间:2026-1-1 23:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
RENESAS(瑞萨)/IDT
24+
7350
现货供应,当天可交货!免费送样,原厂技术支持!!!
NEC
24+
TO-263
8866
NEC
24+
TO-220
43200
郑重承诺只做原装进口现货
NEC
25+
VQFN-24
86720
全新原装进口现货价格优惠 本公司承诺原装正品假一赔
NEC
24+
TO-220
9600
原装现货,优势供应,支持实单!
NEC
23+
08+
6500
专注配单,只做原装进口现货
NEC
09+08+
TO-220
256
只做原装正品
NEC
24+
4326
公司原厂原装现货假一罚十!特价出售!强势库存!
NEC
22+
TO-263
6000
十年配单,只做原装
NK/南科功率
2025+
TO-263
986966
国产

2SK3510-Z数据表相关新闻

  • 2SMPP-02

    优势渠道

    2023-2-16
  • 2SK3105-T1B-A找代理商上深圳百域芯科技

    2SK3105-T1B-A找代理商上深圳百域芯科技 芯片详细信息 Source Content uid: 2SK3484-Z-E1-AZ Manufacturer Part Number: 2SK3484-Z-E1-AZ Brand_Name: Renesas Rohs Code: Yes Part Life Cycle Code: Not Recommended Ihs Manufacturer: RENESAS ELECTRONICS CORP Part Package

    2021-6-24
  • 2SK3105-T1B-A找代理商上深圳百域芯科技

    2SK3105-T1B-A找代理商上深圳百域芯科技 芯片详细信息 Source Content uid: 2SK3105-T1B-A Manufacturer Part Number: 2SK3105-T1B-A Brand_Name: Renesas Pbfree Code: Yes Rohs Code: Yes Part Life Cycle Code: Obsolete Ihs Manufacturer: RENESAS ELECTRONICS CORP P

    2021-6-24
  • 2SK508G-K51-AE3-R

    属性 参数值 商品目录 结型场效应晶体管(JFET) 连续漏极电流(Id)(25°C 时) 50mA 漏源电压(Vdss) 15V 类型 N 沟道 最大功率耗散(Ta=25°C) 200mW

    2020-11-12
  • 2SK3313

    2SK3313,全新原装当天发货或门市自取0755-82732291.

    2020-3-28
  • 2SK3591-01R

    2SK3591-01R,全新原装当天发货或门市自取0755-82732291.

    2020-3-28