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位置：首页 > IC中文资料第7058页 > 2SK347

2SK347价格

参考价格：￥2.3400

型号：2SK3475 品牌：TOSHIBA 备注：这里有2SK347多少钱，2025年最近7天走势，今日出价，今日竞价，2SK347批发/采购报价，2SK347行情走势销售排行榜，2SK347报价。
型号 功能描述 生产厂家 企业 LOGO 操作
2SK3471

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (PIE-MOSV)

Switching Regulator and DC-DC Converter Applications • Low drain-source ON-resistance: RDS (ON) = 10 Ω (typ.) • High forward transfer admittance: |Yfs| = 0.4 S (typ.) • Low leakage current: IDSS = 100 μA (max) (VDS = 500 V) • Enhancement model: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)

TOSHIBA

东芝

2SK3471

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBA

东芝

2SK3472

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBA

东芝

2SK3472

Switching Regulator Applications

Switching Regulator Applications • Low drain-source ON-resistance: RDS (ON) = 4.0 mΩ (typ.) • High forward transfer admittance: |Yfs| = 0.8 S (typ.) • Low leakage current: IDSS = 100 μA (max) (VDS = 450 V) • Enhancement model: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)

TOSHIBA

东芝

2SK3473

Switching Regulator Applications

Switching Regulator Applications • Low drain-source ON resistance: RDS (ON)= 1.3 Ω(typ.) • High forward transfer admittance: |Yfs| = 6.5 S (typ.) • Low leakage current: IDSS= 100 μA (VDS= 720 V) • Enhancement mode: Vth= 2.0 to 4.0 V (VDS= 10 V, ID= 1 mA)

TOSHIBA

东芝

2SK3473

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBA

东芝

2SK3475

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBA

东芝

2SK3475

VHF-and UHF-band Amplifier Applications

VHF- and UHF-band Amplifier Applications (Note)The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment.These TOSHIBA products are neither intended nor warranted for any other use.Do not use these TOSHIBA products listed in this

TOSHIBA

东芝

2SK3476

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type

VHF- and UHF-band Amplifier Applications (Note)The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment.These TOSHIBA products are neither intended nor warranted for any other use.Do not use these TOSHIBA products listed in this

TOSHIBA

东芝

2SK3476

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBA

东芝

2SK3479

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3479 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance: RDS(on)1 = 11mΩ MAX. (VGS = 10 V, ID = 42 A) RDS(on)2 = 13mΩ MAX. (VGS = 4.5 V, ID = 42 A) • L

RENESAS

瑞萨

2SK3479

SWITCHING N-CHANNEL POWER MOSFET

DESCRIPTION The 2SK3479 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance: RDS(on)1 = 11 mΩ MAX. (VGS = 10 V, ID = 42 A) RDS(on)2 = 13 mΩ MAX. (VGS = 4.5 V, ID = 42 A) • Low Ciss: Ciss = 11000 pF TYP. • Bu

NEC

瑞萨

2SK3479

MOS Field Effect Transistor

FEATURES • Super low on-state resistance: RDS(on)1 = 11 mΩ MAX. (VGS = 10 V, ID = 42 A) RDS(on)2 = 13 mΩ MAX. (VGS = 4.5 V, ID = 42 A) • Low Ciss: Ciss = 11000 pF TYP. • Built-in gate protection diode

KEXIN

科信电子

2SK3479-S

SWITCHING N-CHANNEL POWER MOSFET

DESCRIPTION The 2SK3479 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance: RDS(on)1 = 11 mΩ MAX. (VGS = 10 V, ID = 42 A) RDS(on)2 = 13 mΩ MAX. (VGS = 4.5 V, ID = 42 A) • Low Ciss: Ciss = 11000 pF TYP. • Bu

NEC

瑞萨

2SK3479-S

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3479 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance: RDS(on)1 = 11mΩ MAX. (VGS = 10 V, ID = 42 A) RDS(on)2 = 13mΩ MAX. (VGS = 4.5 V, ID = 42 A) • L

RENESAS

瑞萨

2SK3479-Z

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3479 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance: RDS(on)1 = 11mΩ MAX. (VGS = 10 V, ID = 42 A) RDS(on)2 = 13mΩ MAX. (VGS = 4.5 V, ID = 42 A) • L

RENESAS

瑞萨

2SK3479-Z

SWITCHING N-CHANNEL POWER MOSFET

DESCRIPTION The 2SK3479 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance: RDS(on)1 = 11 mΩ MAX. (VGS = 10 V, ID = 42 A) RDS(on)2 = 13 mΩ MAX. (VGS = 4.5 V, ID = 42 A) • Low Ciss: Ciss = 11000 pF TYP. • Bu

NEC

瑞萨

2SK3479-ZJ

SWITCHING N-CHANNEL POWER MOSFET

DESCRIPTION The 2SK3479 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance: RDS(on)1 = 11 mΩ MAX. (VGS = 10 V, ID = 42 A) RDS(on)2 = 13 mΩ MAX. (VGS = 4.5 V, ID = 42 A) • Low Ciss: Ciss = 11000 pF TYP. • Bu

NEC

瑞萨

2SK3479-ZJ

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3479 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance: RDS(on)1 = 11mΩ MAX. (VGS = 10 V, ID = 42 A) RDS(on)2 = 13mΩ MAX. (VGS = 4.5 V, ID = 42 A) • L

RENESAS

瑞萨

2SK3471

Switching Regulator and DC-DC Converter Applications

文件：149.03 Kbytes Page：3 Pages

TOSHIBA

东芝

2SK3471

Silicon N Channel MOS Type Switching Regulator and DC-DC Converter Applications

文件：154.06 Kbytes Page：3 Pages

TOSHIBA

东芝

2SK3471_06

Silicon N Channel MOS Type Switching Regulator and DC-DC Converter Applications

文件：154.06 Kbytes Page：3 Pages

TOSHIBA

东芝

2SK3471_10

Switching Regulator and DC-DC Converter Applications

文件：149.03 Kbytes Page：3 Pages

TOSHIBA

东芝

2SK3472

isc N-Channel MOSFET Transistor

文件：398.35 Kbytes Page：2 Pages

ISC

无锡固电

2SK3472

Silicon N-Channel MOS Type Switching Regulator Applications

文件：191.47 Kbytes Page：6 Pages

TOSHIBA

东芝

2SK3472

N-Channel 650 V (D-S) MOSFET

文件：1.08587 Mbytes Page：9 Pages

VBSEMI

微碧半导体

2SK3472

Power MOSFET (N-ch 250V VDSS 500V)

TOSHIBA

东芝

2SK3472_06

Silicon N-Channel MOS Type Switching Regulator Applications

文件：191.47 Kbytes Page：6 Pages

TOSHIBA

东芝

2SK3473

Silicon N Channel MOS Type Switching Regulator Applications

文件：230.17 Kbytes Page：6 Pages

TOSHIBA

东芝

2SK3473

isc N-Channel MOSFET Transistor

文件：331.18 Kbytes Page：2 Pages

ISC

无锡固电

2SK3473

Switching Regulator Applications

文件：211.81 Kbytes Page：6 Pages

TOSHIBA

东芝

2SK3473

Power MOSFET (N-ch 700V VDSS)

TOSHIBA

东芝

2SK3473_06

Silicon N Channel MOS Type Switching Regulator Applications

文件：230.17 Kbytes Page：6 Pages

TOSHIBA

东芝

2SK3473_09

Switching Regulator Applications

文件：211.81 Kbytes Page：6 Pages

TOSHIBA

东芝

2SK3474-01

N-CHANNEL SILICON POWER MOSFET

文件：107.07 Kbytes Page：4 Pages

Fuji

富士通

2SK3474-01

功率MOSFET 100V-300V

Fuji

富士通

2SK3475

Silicon N Channel MOS Type VHF- and UHF-band Amplifier Applications

文件：157.54 Kbytes Page：4 Pages

TOSHIBA

东芝

2SK3475_07

Silicon N Channel MOS Type VHF- and UHF-band Amplifier Applications

文件：157.54 Kbytes Page：4 Pages

TOSHIBA

东芝

2SK3476

Silicon N Channel MOS Type VHF- and UHF-band Amplifier Applications

文件：166.39 Kbytes Page：4 Pages

TOSHIBA

东芝

2SK3476_07

Silicon N Channel MOS Type VHF- and UHF-band Amplifier Applications

文件：166.39 Kbytes Page：4 Pages

TOSHIBA

东芝

2SK3479

isc N-Channel MOSFET Transistor

文件：333.1 Kbytes Page：2 Pages

ISC

无锡固电

2SK3479_15

MOS FIELD EFFECT TRANSISTOR

文件：213.2 Kbytes Page：10 Pages

RENESAS

瑞萨

2SK3479-S

isc N-Channel MOSFET Transistor

文件：327.13 Kbytes Page：2 Pages

ISC

无锡固电

2SK3479-Z

isc N-Channel MOSFET Transistor

文件：401.28 Kbytes Page：2 Pages

ISC

无锡固电

2SK3479-Z-E1-AZ

SWITCHING N-CHANNEL POWER MOS FET

文件：213.2 Kbytes Page：10 Pages

RENESAS

瑞萨

2SK3479-ZJ

isc N-Channel MOSFET Transistor

文件：401.41 Kbytes Page：2 Pages

ISC

无锡固电

2SK347产品属性

  • 类型

    描述

  • 型号

    2SK347

  • 制造商

    TOSHIBA

  • 制造商全称

    Toshiba Semiconductor

  • 功能描述

    Silicon N Channel MOS Type Switching Regulator and DC-DC Converter Applications

2SK347供应商更多...

更新时间：2025-12-25 16:30:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市一线半导体有限公司
2SK3479-ZJ
NEC
24+
TO-263
8866
询价
深圳市华睿芯科技有限公司
2SK3479-Z-E1-AZ
NEC
24+
TO263
20000
全新原厂原装，进口正品现货，正规渠道可含税！！
询价
深圳市昌和盛利电子有限公司
2SK3479-Z
NEC
NEW
TO-263
35890
代理全系列销售,全新原装正品,价格优势,长期供应,量大可订
询价
洪芯国际半导体（深圳）有限公司
2SK3479-Z
NEC
25+
VQFN24
86720
全新原装进口现货价格优惠 本公司承诺原装正品假一赔
询价
艾睿（深圳）半导体有限公司
2SK3479-ZJ
NEC
2447
SOT-263
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
询价
深圳市豪迈兴电子有限公司
2SK3479-Z
NEC
24+
8858
公司原厂原装现货假一罚十!特价出售!强势库存!
询价
深圳市河锋鑫科技有限公司
2SK3479-Z
RENESAS/瑞萨
2022+
TO-263
50000
原厂代理 终端免费提供样品
询价
深圳市南科功率半导体有限公司
2SK3479-Z
NK/南科功率
2025+
TO-263
986966
国产
询价
深圳市芯皇电子有限公司
2SK3479-Z-E1
NEC
23+
TO263
66600
专业芯片配单原装正品假一罚十
询价
深圳市亿智腾科技有限公司
2SK3479-Z
NEC
24+
6540
原装现货/欢迎来电咨询
询价

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