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| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
2SK3479-Z | SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION The 2SK3479 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance: RDS(on)1 = 11 mΩ MAX. (VGS = 10 V, ID = 42 A) RDS(on)2 = 13 mΩ MAX. (VGS = 4.5 V, ID = 42 A) • Low Ciss: Ciss = 11000 pF TYP. • Bu | NEC 瑞萨 |   | |
2SK3479-Z | MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3479 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance: RDS(on)1 = 11mΩ MAX. (VGS = 10 V, ID = 42 A) RDS(on)2 = 13mΩ MAX. (VGS = 4.5 V, ID = 42 A) • L | RENESAS 瑞萨 | | |
2SK3479-Z | Nch Single Power Mosfet 100V 83A 11Mohm Mp-25Z/To-220Smd | RENESAS 瑞萨 | | |
2SK3479-Z | isc N-Channel MOSFET Transistor 文件：401.28 Kbytes Page：2 Pages | ISC 无锡固电 | | |
MOS Field Effect Transistor FEATURES • Super low on-state resistance: RDS(on)1 = 11 mΩ MAX. (VGS = 10 V, ID = 42 A) RDS(on)2 = 13 mΩ MAX. (VGS = 4.5 V, ID = 42 A) • Low Ciss: Ciss = 11000 pF TYP. • Built-in gate protection diode | KEXIN 科信电子 | | ||
SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION The 2SK3479 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance: RDS(on)1 = 11 mΩ MAX. (VGS = 10 V, ID = 42 A) RDS(on)2 = 13 mΩ MAX. (VGS = 4.5 V, ID = 42 A) • Low Ciss: Ciss = 11000 pF TYP. • Bu | NEC 瑞萨 | | ||
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3479 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance: RDS(on)1 = 11mΩ MAX. (VGS = 10 V, ID = 42 A) RDS(on)2 = 13mΩ MAX. (VGS = 4.5 V, ID = 42 A) • L | RENESAS 瑞萨 | | ||
isc N-Channel MOSFET Transistor 文件：333.1 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION The 2SK3479 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance: RDS(on)1 = 11 mΩ MAX. (VGS = 10 V, ID = 42 A) RDS(on)2 = 13 mΩ MAX. (VGS = 4.5 V, ID = 42 A) • Low Ciss: Ciss = 11000 pF TYP. • Bu | NEC 瑞萨 | | ||
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3479 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance: RDS(on)1 = 11mΩ MAX. (VGS = 10 V, ID = 42 A) RDS(on)2 = 13mΩ MAX. (VGS = 4.5 V, ID = 42 A) • L | RENESAS 瑞萨 | | ||
SWITCHING N-CHANNEL POWER MOS FET 文件：213.2 Kbytes Page：10 Pages | RENESAS 瑞萨 | | ||
isc N-Channel MOSFET Transistor 文件：401.41 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION The 2SK3479 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance: RDS(on)1 = 11 mΩ MAX. (VGS = 10 V, ID = 42 A) RDS(on)2 = 13 mΩ MAX. (VGS = 4.5 V, ID = 42 A) • Low Ciss: Ciss = 11000 pF TYP. • Bu | NEC 瑞萨 | |
2SK3479-Z产品属性
- 类型
描述
- 型号
2SK3479-Z
- 制造商
NEC
- 制造商全称
NEC
- 功能描述
SWITCHING N-CHANNEL POWER MOSFET
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
NEC |
23+ |
TO263 |
66600 |
专业芯片配单原装正品假一罚十 |
|||
NEC |
26+ |
TO-263 |
35890 |
代理全系列销售,全新原装正品,价格优势,长期供应,量大可订 |
|||
NEC |
26+ |
VQFN24 |
86720 |
全新原装正品价格最实惠 假一赔百 |
|||
VBSEMI/台湾微碧 |
23+ |
TO-220 |
50000 |
全新原装正品现货,支持订货 |
|||
NEC |
24+ |
TO263 |
20000 |
全新原厂原装，进口正品现货，正规渠道可含税！！ |
|||
RENESAS |
24+ |
con |
35960 |
查现货到京北通宇商城 |
|||
24+ |
N/A |
65000 |
一级代理-主营优势-实惠价格-不悔选择 |
||||
VBSEMI/台湾微碧 |
24+ |
TO-220 |
60000 |
||||
NEC |
24+ |
6540 |
原装现货/欢迎来电咨询 |
||||
NEC |
24+ |
8858 |
公司原厂原装现货假一罚十!特价出售!强势库存! |
2SK3479-Z规格书下载地址
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2SK3479-Z数据表相关新闻
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DdatasheetPDF页码索引
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