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| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
2SK3479-S | SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION The 2SK3479 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance: RDS(on)1 = 11 mΩ MAX. (VGS = 10 V, ID = 42 A) RDS(on)2 = 13 mΩ MAX. (VGS = 4.5 V, ID = 42 A) • Low Ciss: Ciss = 11000 pF TYP. • Bu | NEC 瑞萨 |   | |
2SK3479-S | MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3479 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance: RDS(on)1 = 11mΩ MAX. (VGS = 10 V, ID = 42 A) RDS(on)2 = 13mΩ MAX. (VGS = 4.5 V, ID = 42 A) • L | RENESAS 瑞萨 | | |
2SK3479-S | SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION\nThe 2SK3479 is N-channel MOS Field Effect Transistor designed for high current switching applications.FEATURES\n• Super low on-state resistance:\n RDS(on)1 = 11 mΩ MAX. (VGS = 10 V, ID = 42 A)\n RDS(on)2 = 13 mΩ MAX. (VGS = 4.5 V, ID = 42 A)\n• Low Ciss: Ciss = 11000 pF TYP.\n• Built- • Super low on-state resistance:\n RDS(on)1 = 11 mΩ MAX. (VGS = 10 V, ID = 42 A)\n RDS(on)2 = 13 mΩ MAX. (VGS = 4.5 V, ID = 42 A)\n• Low Ciss: Ciss = 11000 pF TYP.\n• Built-in gate protection diode; | RENESAS 瑞萨 | | |
2SK3479-S | isc N-Channel MOSFET Transistor 文件：327.13 Kbytes Page：2 Pages | ISC 无锡固电 | | |
MOS Field Effect Transistor FEATURES • Super low on-state resistance: RDS(on)1 = 11 mΩ MAX. (VGS = 10 V, ID = 42 A) RDS(on)2 = 13 mΩ MAX. (VGS = 4.5 V, ID = 42 A) • Low Ciss: Ciss = 11000 pF TYP. • Built-in gate protection diode | KEXIN 科信电子 | | ||
SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION The 2SK3479 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance: RDS(on)1 = 11 mΩ MAX. (VGS = 10 V, ID = 42 A) RDS(on)2 = 13 mΩ MAX. (VGS = 4.5 V, ID = 42 A) • Low Ciss: Ciss = 11000 pF TYP. • Bu | NEC 瑞萨 | | ||
SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION The 2SK3479 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance: RDS(on)1 = 11 mΩ MAX. (VGS = 10 V, ID = 42 A) RDS(on)2 = 13 mΩ MAX. (VGS = 4.5 V, ID = 42 A) • Low Ciss: Ciss = 11000 pF TYP. • Bu | NEC 瑞萨 | | ||
SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION The 2SK3479 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance: RDS(on)1 = 11 mΩ MAX. (VGS = 10 V, ID = 42 A) RDS(on)2 = 13 mΩ MAX. (VGS = 4.5 V, ID = 42 A) • Low Ciss: Ciss = 11000 pF TYP. • Bu | NEC 瑞萨 | |
2SK3479-S产品属性
- 类型
描述
- 型号
2SK3479-S
- 制造商
NEC
- 制造商全称
NEC
- 功能描述
SWITCHING N-CHANNEL POWER MOSFET
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
PANASONIC |
2016+ |
SOT23 |
6000 |
全新原装现货,量大价优,公司可售样! |
|||
PANASONIC/松下 |
23+ |
TO-92S |
50000 |
全新原装正品现货,支持订货 |
|||
PANASONIC/松下 |
06+ |
SOT23 |
2270 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
PANASONIC |
24+ |
TO-92NL |
4200 |
只做原装正品现货 欢迎来电查询15919825718 |
|||
NEC |
26+ |
T0-262 |
35890 |
代理全系列销售,全新原装正品,价格优势,长期供应,量大可订 |
|||
NEC |
24+ |
TO-262 |
8866 |
||||
PANASONIC |
25+ |
SOT89 |
2987 |
只售原装自家现货!诚信经营!欢迎来电 |
|||
Panasonic Electronic Component |
25+ |
TO-236-3 SC-59 SOT-23-3 |
9350 |
独立分销商 公司只做原装 诚心经营 免费试样正品保证 |
|||
PANASONIC |
24+ |
SOT23 |
65200 |
一级代理/放心采购 |
|||
PANASONIC/松下 |
22+ |
TO-92S |
20000 |
公司只有原装 品质保证 |
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2SK3479-S规格书下载地址
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2SK3479-S数据表相关新闻
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DdatasheetPDF页码索引
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