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| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
2SK3479 | SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION The 2SK3479 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance: RDS(on)1 = 11 mΩ MAX. (VGS = 10 V, ID = 42 A) RDS(on)2 = 13 mΩ MAX. (VGS = 4.5 V, ID = 42 A) • Low Ciss: Ciss = 11000 pF TYP. • Bu | NEC 瑞萨 |   | |
2SK3479 | MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3479 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance: RDS(on)1 = 11mΩ MAX. (VGS = 10 V, ID = 42 A) RDS(on)2 = 13mΩ MAX. (VGS = 4.5 V, ID = 42 A) • L | RENESAS 瑞萨 | | |
2SK3479 | MOS Field Effect Transistor FEATURES • Super low on-state resistance: RDS(on)1 = 11 mΩ MAX. (VGS = 10 V, ID = 42 A) RDS(on)2 = 13 mΩ MAX. (VGS = 4.5 V, ID = 42 A) • Low Ciss: Ciss = 11000 pF TYP. • Built-in gate protection diode | KEXIN 科信电子 | | |
2SK3479 | Nch Single Power Mosfet 100V 83A 11Mohm Mp-25/To-220Ab The 2SK3479 is a Nch Single Power Mosfet 100V 83A 11Mohm Mp-25/To-220Ab. • Super low on-state resistance: RDS(on)1 = 11 mΩ MAX. (VGS = 10 V, ID = 42 A) RDS(on)2 = 13 mΩ MAX. (VGS = 4.5 V, ID = 42 A)\n• Low Ciss : Ciss = 11000 pF TYP.\n• Built-in gate protection diode\n文档文档标题类型日期Attention of Handling Semiconductor DevicesPDF648 KB日本語应用文档 2021年4月16日2SK3479 Data SheetPDF207; | RENESAS 瑞萨 | | |
2SK3479 | isc N-Channel MOSFET Transistor 文件：333.1 Kbytes Page：2 Pages | ISC 无锡固电 | | |
SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION\nThe 2SK3479 is N-channel MOS Field Effect Transistor designed for high current switching applications.FEATURES\n• Super low on-state resistance:\n RDS(on)1 = 11 mΩ MAX. (VGS = 10 V, ID = 42 A)\n RDS(on)2 = 13 mΩ MAX. (VGS = 4.5 V, ID = 42 A)\n• Low Ciss: Ciss = 11000 pF TYP.\n• Built- • Super low on-state resistance:\n RDS(on)1 = 11 mΩ MAX. (VGS = 10 V, ID = 42 A)\n RDS(on)2 = 13 mΩ MAX. (VGS = 4.5 V, ID = 42 A)\n• Low Ciss: Ciss = 11000 pF TYP.\n• Built-in gate protection diode; | RENESAS 瑞萨 | | ||
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3479 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance: RDS(on)1 = 11mΩ MAX. (VGS = 10 V, ID = 42 A) RDS(on)2 = 13mΩ MAX. (VGS = 4.5 V, ID = 42 A) • L | RENESAS 瑞萨 | | ||
SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION The 2SK3479 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance: RDS(on)1 = 11 mΩ MAX. (VGS = 10 V, ID = 42 A) RDS(on)2 = 13 mΩ MAX. (VGS = 4.5 V, ID = 42 A) • Low Ciss: Ciss = 11000 pF TYP. • Bu | NEC 瑞萨 | | ||
SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION The 2SK3479 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance: RDS(on)1 = 11 mΩ MAX. (VGS = 10 V, ID = 42 A) RDS(on)2 = 13 mΩ MAX. (VGS = 4.5 V, ID = 42 A) • Low Ciss: Ciss = 11000 pF TYP. • Bu | NEC 瑞萨 | | ||
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3479 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance: RDS(on)1 = 11mΩ MAX. (VGS = 10 V, ID = 42 A) RDS(on)2 = 13mΩ MAX. (VGS = 4.5 V, ID = 42 A) • L | RENESAS 瑞萨 | | ||
Nch Single Power Mosfet 100V 83A 11Mohm Mp-25Z/To-220Smd The 2SK3479-Z is a Nch Single Power Mosfet 100V 83A 11Mohm Mp-25Z/To-220Smd. • Super low on-state resistance: RDS(on)1 = 11 mΩ MAX. (VGS = 10 V, ID = 42 A) RDS(on)2 = 13 mΩ MAX. (VGS = 4.5 V, ID = 42 A)\n• Low Ciss : Ciss = 11000 pF TYP.\n• Built-in gate protection diode\n文档文档标题类型日期Attention of Handling Semiconductor DevicesPDF648 KB日本語应用文档2021年4月16日2SK3479 Data SheetPDF207 ; | RENESAS 瑞萨 | | ||
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3479 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance: RDS(on)1 = 11mΩ MAX. (VGS = 10 V, ID = 42 A) RDS(on)2 = 13mΩ MAX. (VGS = 4.5 V, ID = 42 A) • L | RENESAS 瑞萨 | | ||
SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION The 2SK3479 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance: RDS(on)1 = 11 mΩ MAX. (VGS = 10 V, ID = 42 A) RDS(on)2 = 13 mΩ MAX. (VGS = 4.5 V, ID = 42 A) • Low Ciss: Ciss = 11000 pF TYP. • Bu | NEC 瑞萨 | | ||
MOS FIELD EFFECT TRANSISTOR 文件：213.2 Kbytes Page：10 Pages | RENESAS 瑞萨 | | ||
isc N-Channel MOSFET Transistor 文件：327.13 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
isc N-Channel MOSFET Transistor 文件：401.28 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
SWITCHING N-CHANNEL POWER MOS FET 文件：213.2 Kbytes Page：10 Pages | RENESAS 瑞萨 | | ||
isc N-Channel MOSFET Transistor 文件：401.41 Kbytes Page：2 Pages | ISC 无锡固电 | |
2SK3479产品属性
- 类型
描述
- 型号
2SK3479
- 制造商
NEC
- 制造商全称
NEC
- 功能描述
SWITCHING N-CHANNEL POWER MOSFET
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
NEC |
23+ |
TO263 |
66600 |
专业芯片配单原装正品假一罚十 |
|||
Renesas |
21+ |
30 |
只做原装鄙视假货15118075546 |
||||
NEC |
26+ |
TO-220 |
35890 |
代理全系列销售,全新原装正品,价格优势,长期供应,量大可订 |
|||
NEC |
2450+ |
TO263 |
6540 |
只做原厂原装正品终端客户免费申请样品 |
|||
NEC |
24+ |
TO-220AB |
8866 |
||||
NEC |
2602+ |
8858 |
公司原厂原装现货假一罚十!特价出售!强势库存! |
||||
25+ |
66880 |
原装正品，欢迎询价 |
|||||
NEC |
14+ |
TO263 |
264 |
全新 发货1-2天 |
|||
NEC |
26+ |
VQFN24 |
86720 |
全新原装正品价格最实惠 假一赔百 |
|||
NEC |
20+ |
TO263 |
20500 |
汽车电子原装主营-可开原型号增税票 |
2SK3479芯片相关品牌
2SK3479规格书下载地址
2SK3479参数引脚图相关
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- 2SK3449
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- 2SK3447
2SK3479数据表相关新闻
2SMPP-02
优势渠道
2023-2-162SK3105-T1B-A找代理商上深圳百域芯科技
2SK3105-T1B-A找代理商上深圳百域芯科技 芯片详细信息 Source Content uid: 2SK3484-Z-E1-AZ Manufacturer Part Number: 2SK3484-Z-E1-AZ Brand_Name: Renesas Rohs Code: Yes Part Life Cycle Code: Not Recommended Ihs Manufacturer: RENESAS ELECTRONICS CORP Part Package
2021-6-242SK3105-T1B-A找代理商上深圳百域芯科技
2SK3105-T1B-A找代理商上深圳百域芯科技 芯片详细信息 Source Content uid: 2SK3105-T1B-A Manufacturer Part Number: 2SK3105-T1B-A Brand_Name: Renesas Pbfree Code: Yes Rohs Code: Yes Part Life Cycle Code: Obsolete Ihs Manufacturer: RENESAS ELECTRONICS CORP P
2021-6-242SK508G-K51-AE3-R
属性 参数值 商品目录 结型场效应晶体管（JFET） 连续漏极电流（Id）（25°C 时） 50mA 漏源电压（Vdss） 15V 类型 N 沟道 最大功率耗散（Ta=25°C） 200mW
2020-11-122SK3313
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2020-3-282SK3591-01R
2SK3591-01R，全新原装当天发货或门市自取0755-82732291.
2020-3-28
DdatasheetPDF页码索引
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