型号 功能描述 生产厂家 企业 LOGO 操作
2SK313

isc N-Channel MOSFET Transistor

文件:343.69 Kbytes Page:2 Pages

ISC

无锡固电

Power MOSFET

Power MOSFET

SUNTAC

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (?-MOSV)

Switching Regulator Applications • Reverse-recovery time: trr = 85 ns • Built-in high-speed flywheel diode • Low drain-source ON resistance: RDS (ON) = 1.12 Ω (typ.) • High forward transfer admittance: |Yfs| = 5.0 S (typ.) • Low leakage current: IDSS = 100 μA (max) (VDS = 600 V) • Enhancemen

TOSHIBA

东芝

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBA

东芝

Field Effect Transistor Silicon N Channel MOS Type

Chopper Regulator DC−DC Converter and Motor Drive Applications • Fast reverse recovery time : trr = 105 ns (typ.) • Built-in high-speed free-wheeling diode • Low drain−source ON resistance : RDS (ON) = 0.085 Ω (typ.) • High forward transfer admittance : |Yfs| = 35 S (typ.) • Low leakage curre

TOSHIBA

东芝

Chopper Regulator DC-DC Converter, and Motor Drive Applications

Field Effect Transistor Silicon N Channel MOS Type (π−MOSV) Chopper Regulator DC−DC Converter and Motor Drive Applications Low drain−source ON resistance : RDS (ON)= 0.07 Ω(typ.) High forward transfer admittance : |Yfs| = 33 S (typ.) Low leakage current : IDSS= 100 μA (max) (VDS

TOSHIBA

东芝

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBA

东芝

Silicon N Channel MOS FET High Speed Power Switching

Features • Low on-resistance RDS(on) = 7 mΩ typ. • Low drive current • 4 V gate drive device can be driven from 5 V source

HitachiHitachi Semiconductor

日立日立公司

Silicon N Channel MOS FET High Speed Power Switching

Features • Low on-resistance RDS(on) = 7 mΩ typ. • Low drive current • 4 V gate drive device can be driven from 5 V source

HitachiHitachi Semiconductor

日立日立公司

Silicon N Channel MOS FET High Speed Power Switching

Features • Low on-resistance RDS(on) = 7 mΩ typ. • Low drive current • 4 V gate drive device can be driven from 5 V source

HitachiHitachi Semiconductor

日立日立公司

Silicon N Channel MOS FET High Speed Power Switching

Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on)= 4 mΩ typ. • Low drive current • 4 V gate drive device can be driven from 5 V source

HitachiHitachi Semiconductor

日立日立公司

Silicon N Channel MOS FET High Speed Power Switching

Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on)= 4 mΩ typ. • Low drive current • 4 V gate drive device can be driven from 5 V source

RENESAS

瑞萨

Silicon N Channel MOS FET High Speed Power Switching

Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on)= 4 mΩ typ. • Low drive current • 4 V gate drive device can be driven from 5 V source

HitachiHitachi Semiconductor

日立日立公司

Silicon N Channel MOS FET High Speed Power Switching

Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on)= 4 mΩ typ. • Low drive current • 4 V gate drive device can be driven from 5 V source

RENESAS

瑞萨

Silicon N Channel MOS FET High Speed Power Switching

Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on)= 4 mΩ typ. • Low drive current • 4 V gate drive device can be driven from 5 V source

HitachiHitachi Semiconductor

日立日立公司

Silicon N Channel MOS FET High Speed Power Switching

Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on)= 4 mΩ typ. • Low drive current • 4 V gate drive device can be driven from 5 V source

RENESAS

瑞萨

Silicon N Channel MOS FET High Speed Power Switching

Features • Low on-resistance RDS(on) = 6 mΩ typ. • Low drive current • 4 V gate drive device can be driven from 5 V source

RENESAS

瑞萨

Silicon N Channel MOS FET High Speed Power Switching

Features • Low on-resistance RDS(on) = 6 mΩ typ. • Low drive current • 4 V gate drive device can be driven from 5 V source

HitachiHitachi Semiconductor

日立日立公司

Silicon N Channel MOS FET High Speed Power Switching

Features • Low on-resistance RDS(on) = 6 mΩ typ. • Low drive current • 4 V gate drive device can be driven from 5 V source

HitachiHitachi Semiconductor

日立日立公司

Silicon N Channel MOS FET High Speed Power Switching

Features • Low on-resistance RDS(on) = 6 mΩ typ. • Low drive current • 4 V gate drive device can be driven from 5 V source

RENESAS

瑞萨

Silicon N Channel MOS FET High Speed Power Switching

Features • Low on-resistance RDS(on) = 6 mΩ typ. • Low drive current • 4 V gate drive device can be driven from 5 V source

HitachiHitachi Semiconductor

日立日立公司

Silicon N Channel MOS FET High Speed Power Switching

Features • Low on-resistance RDS(on) = 6 mΩ typ. • Low drive current • 4 V gate drive device can be driven from 5 V source

RENESAS

瑞萨

Silicon N Channel MOS FET High Speed Power Switching

Features • Low on-resistance RDS(on) =4.5 mΩ typ. • Low drive current • 4 V gate drive device can be driven from 5 V source

RENESAS

瑞萨

Silicon N Channel MOS FET High Speed Power Switching

Features • Low on-resistance RDS(on) = 4.5 mΩ typ. • Low drive current • 4 V gate drive device can be driven from 5 V source

HitachiHitachi Semiconductor

日立日立公司

Silicon N Channel MOS FET High Speed Power Switching

Features • Low on-resistance RDS(on) =4.5 mΩ typ. • Low drive current • 4 V gate drive device can be driven from 5 V source

RENESAS

瑞萨

Silicon N Channel MOS Type

文件:192.87 Kbytes Page:6 Pages

TOSHIBA

东芝

Switching Regulator Applications

文件:186.45 Kbytes Page:6 Pages

TOSHIBA

东芝

isc N-Channel MOSFET Transistor

文件:323.36 Kbytes Page:2 Pages

ISC

无锡固电

Power MOSFET

SUNTAC

Silicon N Channel MOS Type

文件:192.87 Kbytes Page:6 Pages

TOSHIBA

东芝

Switching Regulator Applications

文件:186.45 Kbytes Page:6 Pages

TOSHIBA

东芝

Silicon N Channel MOS Type Chopper Regulator DC−DC Converter and Motor Drive Applications

文件:712.89 Kbytes Page:6 Pages

TOSHIBA

东芝

Chopper Regulator DC−DC Converter and Motor Drive Applications

文件:432.06 Kbytes Page:6 Pages

TOSHIBA

东芝

Field Effect Transistor Silicon N Channel MOS Type (pi-MOSV) Chopper Regulator, DC .DC Converter and Motor Drive Applications

TOSHIBA

东芝

isc N-Channel MOSFET Transistor

文件:327.67 Kbytes Page:2 Pages

ISC

无锡固电

Silicon N Channel MOS Type Chopper Regulator DC−DC Converter and Motor Drive Applications

文件:712.89 Kbytes Page:6 Pages

TOSHIBA

东芝

Chopper Regulator DC−DC Converter and Motor Drive Applications

文件:432.06 Kbytes Page:6 Pages

TOSHIBA

东芝

Chopper Regulator DC−DC Converter and Motor Drive Applications

文件:425.29 Kbytes Page:6 Pages

TOSHIBA

东芝

Silicon N Channel MOS Type Chopper Regulator DC−DC Converter and Motor Drive Applications

文件:712.09 Kbytes Page:6 Pages

TOSHIBA

东芝

Power MOSFET (N-ch 250V VDSS 500V)

TOSHIBA

东芝

isc N-Channel MOSFET Transistor

文件:328.08 Kbytes Page:2 Pages

ISC

无锡固电

Silicon N Channel MOS Type Chopper Regulator DC−DC Converter and Motor Drive Applications

文件:712.09 Kbytes Page:6 Pages

TOSHIBA

东芝

Chopper Regulator DC−DC Converter and Motor Drive Applications

文件:425.29 Kbytes Page:6 Pages

TOSHIBA

东芝

isc N-Channel MOSFET Transistor

文件:326.28 Kbytes Page:2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

文件:400.15 Kbytes Page:2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

文件:326.66 Kbytes Page:2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

文件:400.53 Kbytes Page:2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

文件:326.69 Kbytes Page:2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

文件:373.69 Kbytes Page:2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

文件:333.02 Kbytes Page:2 Pages

ISC

无锡固电

N-Channel 4 -V (D-S) MOSFET

文件:1.26336 Mbytes Page:7 Pages

VBSEMI

微碧半导体

2SK313产品属性

  • 类型

    描述

  • 型号

    2SK313

  • 功能描述

    TRANSISTOR | MOSFET | N-CHANNEL | 450V V(BR)DSS | 12A I(D) | TO-3

更新时间:2025-10-11 23:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
RENESAS/瑞萨
24+
NA/
31773
原装现货,当天可交货,原型号开票
TOSHIBA
24+
TO3P
80000
只做自己库存 全新原装进口正品假一赔百 可开13%增
TOSHIBA
NEW
TO-3PL
9526
代理全系列销售,全新原装正品,价格优势,长期供应,量大可订
RENESAS/瑞萨
22+
TO-263
100000
代理渠道/只做原装/可含税
TOSHIBA
24+/25+
36
原装正品现货库存价优
RENESAS
21+
TO-220
10
一级代理,专注军工、汽车、医疗、工业、新能源、电力
HIT/RENES
25+
TO-252
45000
HIT/RENES全新现货2SK3135即刻询购立享优惠#长期有排单订
HITACHI/日立
24+
TO 220
158402
明嘉莱只做原装正品现货
HIT
24+
NA
5000
只做原装正品现货 欢迎来电查询15919825718
2015+
150
公司现货库存

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