位置:首页 > IC中文资料第8255页 > 2SK313
型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
---|---|---|---|---|
2SK313 | isc N-Channel MOSFET Transistor 文件:343.69 Kbytes Page:2 Pages | ISC 无锡固电 | ||
Power MOSFET Power MOSFET | SUNTAC | |||
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (?-MOSV) Switching Regulator Applications • Reverse-recovery time: trr = 85 ns • Built-in high-speed flywheel diode • Low drain-source ON resistance: RDS (ON) = 1.12 Ω (typ.) • High forward transfer admittance: |Yfs| = 5.0 S (typ.) • Low leakage current: IDSS = 100 μA (max) (VDS = 600 V) • Enhancemen | TOSHIBA 东芝 | |||
Field Effect Transistor Silicon N Channel MOS Type Chopper Regulator DC−DC Converter and Motor Drive Applications • Fast reverse recovery time : trr = 105 ns (typ.) • Built-in high-speed free-wheeling diode • Low drain−source ON resistance : RDS (ON) = 0.085 Ω (typ.) • High forward transfer admittance : |Yfs| = 35 S (typ.) • Low leakage curre | TOSHIBA 东芝 | |||
Bipolar Small-Signal Transistors MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf | TOSHIBA 东芝 | |||
Bipolar Small-Signal Transistors MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf | TOSHIBA 东芝 | |||
Chopper Regulator DC-DC Converter, and Motor Drive Applications Field Effect Transistor Silicon N Channel MOS Type (π−MOSV) Chopper Regulator DC−DC Converter and Motor Drive Applications Low drain−source ON resistance : RDS (ON)= 0.07 Ω(typ.) High forward transfer admittance : |Yfs| = 33 S (typ.) Low leakage current : IDSS= 100 μA (max) (VDS | TOSHIBA 东芝 | |||
Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 7 mΩ typ. • Low drive current • 4 V gate drive device can be driven from 5 V source | HitachiHitachi Semiconductor 日立日立公司 | |||
Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 7 mΩ typ. • Low drive current • 4 V gate drive device can be driven from 5 V source | HitachiHitachi Semiconductor 日立日立公司 | |||
Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 7 mΩ typ. • Low drive current • 4 V gate drive device can be driven from 5 V source | HitachiHitachi Semiconductor 日立日立公司 | |||
Silicon N Channel MOS FET High Speed Power Switching Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on)= 4 mΩ typ. • Low drive current • 4 V gate drive device can be driven from 5 V source | HitachiHitachi Semiconductor 日立日立公司 | |||
Silicon N Channel MOS FET High Speed Power Switching Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on)= 4 mΩ typ. • Low drive current • 4 V gate drive device can be driven from 5 V source | RENESAS 瑞萨 | |||
Silicon N Channel MOS FET High Speed Power Switching Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on)= 4 mΩ typ. • Low drive current • 4 V gate drive device can be driven from 5 V source | HitachiHitachi Semiconductor 日立日立公司 | |||
Silicon N Channel MOS FET High Speed Power Switching Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on)= 4 mΩ typ. • Low drive current • 4 V gate drive device can be driven from 5 V source | RENESAS 瑞萨 | |||
Silicon N Channel MOS FET High Speed Power Switching Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on)= 4 mΩ typ. • Low drive current • 4 V gate drive device can be driven from 5 V source | HitachiHitachi Semiconductor 日立日立公司 | |||
Silicon N Channel MOS FET High Speed Power Switching Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on)= 4 mΩ typ. • Low drive current • 4 V gate drive device can be driven from 5 V source | RENESAS 瑞萨 | |||
Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 6 mΩ typ. • Low drive current • 4 V gate drive device can be driven from 5 V source | RENESAS 瑞萨 | |||
Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 6 mΩ typ. • Low drive current • 4 V gate drive device can be driven from 5 V source | HitachiHitachi Semiconductor 日立日立公司 | |||
Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 6 mΩ typ. • Low drive current • 4 V gate drive device can be driven from 5 V source | HitachiHitachi Semiconductor 日立日立公司 | |||
Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 6 mΩ typ. • Low drive current • 4 V gate drive device can be driven from 5 V source | RENESAS 瑞萨 | |||
Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 6 mΩ typ. • Low drive current • 4 V gate drive device can be driven from 5 V source | HitachiHitachi Semiconductor 日立日立公司 | |||
Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 6 mΩ typ. • Low drive current • 4 V gate drive device can be driven from 5 V source | RENESAS 瑞萨 | |||
Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 4.5 mΩ typ. • Low drive current • 4 V gate drive device can be driven from 5 V source | HitachiHitachi Semiconductor 日立日立公司 | |||
Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) =4.5 mΩ typ. • Low drive current • 4 V gate drive device can be driven from 5 V source | RENESAS 瑞萨 | |||
Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) =4.5 mΩ typ. • Low drive current • 4 V gate drive device can be driven from 5 V source | RENESAS 瑞萨 | |||
Silicon N Channel MOS Type 文件:192.87 Kbytes Page:6 Pages | TOSHIBA 东芝 | |||
Switching Regulator Applications 文件:186.45 Kbytes Page:6 Pages | TOSHIBA 东芝 | |||
isc N-Channel MOSFET Transistor 文件:323.36 Kbytes Page:2 Pages | ISC 无锡固电 | |||
Silicon N Channel MOS Type 文件:192.87 Kbytes Page:6 Pages | TOSHIBA 东芝 | |||
Switching Regulator Applications 文件:186.45 Kbytes Page:6 Pages | TOSHIBA 东芝 | |||
Chopper Regulator DC−DC Converter and Motor Drive Applications 文件:432.06 Kbytes Page:6 Pages | TOSHIBA 东芝 | |||
Silicon N Channel MOS Type Chopper Regulator DC−DC Converter and Motor Drive Applications 文件:712.89 Kbytes Page:6 Pages | TOSHIBA 东芝 | |||
isc N-Channel MOSFET Transistor 文件:327.67 Kbytes Page:2 Pages | ISC 无锡固电 | |||
Silicon N Channel MOS Type Chopper Regulator DC−DC Converter and Motor Drive Applications 文件:712.89 Kbytes Page:6 Pages | TOSHIBA 东芝 | |||
Chopper Regulator DC−DC Converter and Motor Drive Applications 文件:432.06 Kbytes Page:6 Pages | TOSHIBA 东芝 | |||
Chopper Regulator DC−DC Converter and Motor Drive Applications 文件:425.29 Kbytes Page:6 Pages | TOSHIBA 东芝 | |||
Silicon N Channel MOS Type Chopper Regulator DC−DC Converter and Motor Drive Applications 文件:712.09 Kbytes Page:6 Pages | TOSHIBA 东芝 | |||
isc N-Channel MOSFET Transistor 文件:328.08 Kbytes Page:2 Pages | ISC 无锡固电 | |||
Silicon N Channel MOS Type Chopper Regulator DC−DC Converter and Motor Drive Applications 文件:712.09 Kbytes Page:6 Pages | TOSHIBA 东芝 | |||
Chopper Regulator DC−DC Converter and Motor Drive Applications 文件:425.29 Kbytes Page:6 Pages | TOSHIBA 东芝 | |||
isc N-Channel MOSFET Transistor 文件:326.28 Kbytes Page:2 Pages | ISC 无锡固电 | |||
isc N-Channel MOSFET Transistor 文件:400.15 Kbytes Page:2 Pages | ISC 无锡固电 | |||
isc N-Channel MOSFET Transistor 文件:326.66 Kbytes Page:2 Pages | ISC 无锡固电 | |||
isc N-Channel MOSFET Transistor 文件:400.53 Kbytes Page:2 Pages | ISC 无锡固电 | |||
isc N-Channel MOSFET Transistor 文件:326.69 Kbytes Page:2 Pages | ISC 无锡固电 | |||
isc N-Channel MOSFET Transistor 文件:373.69 Kbytes Page:2 Pages | ISC 无锡固电 | |||
isc N-Channel MOSFET Transistor 文件:333.02 Kbytes Page:2 Pages | ISC 无锡固电 | |||
N-Channel 4 -V (D-S) MOSFET 文件:1.26336 Mbytes Page:7 Pages | VBSEMI 微碧半导体 |
2SK313产品属性
- 类型
描述
- 型号
2SK313
- 功能描述
TRANSISTOR | MOSFET | N-CHANNEL | 450V V(BR)DSS | 12A I(D) | TO-3
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
Toshiba Semiconductor and Stor |
22+ |
TO3PL |
9000 |
原厂渠道,现货配单 |
|||
东芝 |
2024 |
TO3PL |
58209 |
16余年资质 绝对原盒原盘代理渠道 更多数量 |
|||
TOSHIBA/东芝 |
专业铁帽 |
TO-3 |
500 |
原装铁帽专营,代理渠道量大可订货 |
|||
TOSHIBA |
1922+ |
NA |
9200 |
公司原装现货假一罚十特价欢迎来电咨询 |
|||
NK/南科功率 |
2025+ |
TO-263 |
986966 |
国产 |
|||
RENESAS/瑞萨 |
23+ |
TO-220 |
50000 |
全新原装正品现货,支持订货 |
|||
HIT |
24+ |
NA |
5000 |
只做原装正品现货 欢迎来电查询15919825718 |
|||
TOS |
2021+ |
TO-220F |
6800 |
原厂原装,欢迎咨询 |
|||
23+ |
TO-92S |
5000 |
原厂授权代理,海外优势订货渠道。可提供大量库存,详 |
||||
RENESAS/瑞萨 |
新年份 |
TO-220 |
67430 |
一级代理原装正品现货,支持实单! |
2SK313规格书下载地址
2SK313参数引脚图相关
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- 5000
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- 2SK3151
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- 2SK3141
- 2SK3140
- 2SK3136
- 2SK3135L-E
- 2SK3135L
- 2SK3135(L)|2SK3135(S)
- 2SK3135(L)
- 2SK3135
- 2SK3134STL-E
- 2SK3134S
- 2SK3134L-E
- 2SK3134L
- 2SK3134
- 2SK3133
- 2SK3132_06
- 2SK3132(Q)
- 2SK3132
- 2SK3131_09
- 2SK3131_06
- 2SK3131(Q)
- 2SK3131
- 2SK3130_09
- 2SK3130_06
- 2SK3130(Q)
- 2SK3130
- 2SK3129_06
- 2SK3129(Q)
- 2SK3129
- 2SK3128_09
- 2SK3128_06
- 2SK3128(Q)
- 2SK3128
- 2SK3127-SM(Q)
- 2SK3127_09
- 2SK3127_07
- 2SK3127(TE24L,Q)
- 2SK3127(Q)
- 2SK3127
- 2SK3126_06
- 2SK3126(Q,T)
- 2SK3126(Q)
- 2SK3126
- 2SK3125_08
- 2SK3125_06
- 2SK3125
- 2SK3124
- 2SK3122
- 2SK3121
- 2SK3120
- 2SK3119
- 2SK3117
- 2SK3116
- 2SK3115
- 2SK3114
- 2SK3113
- 2SK3112
- 2SK3111
- 2SK3110
- 2SK311
- 2SK3109
2SK313数据表相关新闻
2SK303L-SOT113SR-V4-TG_UTC代理商
2SK303L-SOT113SR-V4-TG_UTC代理商
2023-2-272SK3105-T1B-A找代理商上深圳百域芯科技
2SK3105-T1B-A找代理商上深圳百域芯科技 芯片详细信息 Source Content uid: 2SK3484-Z-E1-AZ Manufacturer Part Number: 2SK3484-Z-E1-AZ Brand_Name: Renesas Rohs Code: Yes Part Life Cycle Code: Not Recommended Ihs Manufacturer: RENESAS ELECTRONICS CORP Part Package
2021-6-242SK3105-T1B-A找代理商上深圳百域芯科技
2SK3105-T1B-A找代理商上深圳百域芯科技 芯片详细信息 Source Content uid: 2SK3105-T1B-A Manufacturer Part Number: 2SK3105-T1B-A Brand_Name: Renesas Pbfree Code: Yes Rohs Code: Yes Part Life Cycle Code: Obsolete Ihs Manufacturer: RENESAS ELECTRONICS CORP P
2021-6-242SK508G-K51-AE3-R
属性 参数值 商品目录 结型场效应晶体管(JFET) 连续漏极电流(Id)(25°C 时) 50mA 漏源电压(Vdss) 15V 类型 N 沟道 最大功率耗散(Ta=25°C) 200mW
2020-11-122SK3313
2SK3313,全新原装当天发货或门市自取0755-82732291.
2020-3-282SK3591-01R
2SK3591-01R,全新原装当天发货或门市自取0755-82732291.
2020-3-28
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