型号 功能描述 生产厂家&企业 LOGO 操作
2SK313

isc N-Channel MOSFET Transistor

文件:343.69 Kbytes Page:2 Pages

ISC

无锡固电

Power MOSFET

Power MOSFET

SUNTAC

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (?-MOSV)

Switching Regulator Applications • Reverse-recovery time: trr = 85 ns • Built-in high-speed flywheel diode • Low drain-source ON resistance: RDS (ON) = 1.12 Ω (typ.) • High forward transfer admittance: |Yfs| = 5.0 S (typ.) • Low leakage current: IDSS = 100 μA (max) (VDS = 600 V) • Enhancemen

TOSHIBA

东芝

Field Effect Transistor Silicon N Channel MOS Type

Chopper Regulator DC−DC Converter and Motor Drive Applications • Fast reverse recovery time : trr = 105 ns (typ.) • Built-in high-speed free-wheeling diode • Low drain−source ON resistance : RDS (ON) = 0.085 Ω (typ.) • High forward transfer admittance : |Yfs| = 35 S (typ.) • Low leakage curre

TOSHIBA

东芝

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBA

东芝

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBA

东芝

Chopper Regulator DC-DC Converter, and Motor Drive Applications

Field Effect Transistor Silicon N Channel MOS Type (π−MOSV) Chopper Regulator DC−DC Converter and Motor Drive Applications Low drain−source ON resistance : RDS (ON)= 0.07 Ω(typ.) High forward transfer admittance : |Yfs| = 33 S (typ.) Low leakage current : IDSS= 100 μA (max) (VDS

TOSHIBA

东芝

Silicon N Channel MOS FET High Speed Power Switching

Features • Low on-resistance RDS(on) = 7 mΩ typ. • Low drive current • 4 V gate drive device can be driven from 5 V source

HitachiHitachi Semiconductor

日立日立公司

Silicon N Channel MOS FET High Speed Power Switching

Features • Low on-resistance RDS(on) = 7 mΩ typ. • Low drive current • 4 V gate drive device can be driven from 5 V source

HitachiHitachi Semiconductor

日立日立公司

Silicon N Channel MOS FET High Speed Power Switching

Features • Low on-resistance RDS(on) = 7 mΩ typ. • Low drive current • 4 V gate drive device can be driven from 5 V source

HitachiHitachi Semiconductor

日立日立公司

Silicon N Channel MOS FET High Speed Power Switching

Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on)= 4 mΩ typ. • Low drive current • 4 V gate drive device can be driven from 5 V source

HitachiHitachi Semiconductor

日立日立公司

Silicon N Channel MOS FET High Speed Power Switching

Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on)= 4 mΩ typ. • Low drive current • 4 V gate drive device can be driven from 5 V source

RENESAS

瑞萨

Silicon N Channel MOS FET High Speed Power Switching

Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on)= 4 mΩ typ. • Low drive current • 4 V gate drive device can be driven from 5 V source

HitachiHitachi Semiconductor

日立日立公司

Silicon N Channel MOS FET High Speed Power Switching

Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on)= 4 mΩ typ. • Low drive current • 4 V gate drive device can be driven from 5 V source

RENESAS

瑞萨

Silicon N Channel MOS FET High Speed Power Switching

Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on)= 4 mΩ typ. • Low drive current • 4 V gate drive device can be driven from 5 V source

HitachiHitachi Semiconductor

日立日立公司

Silicon N Channel MOS FET High Speed Power Switching

Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on)= 4 mΩ typ. • Low drive current • 4 V gate drive device can be driven from 5 V source

RENESAS

瑞萨

Silicon N Channel MOS FET High Speed Power Switching

Features • Low on-resistance RDS(on) = 6 mΩ typ. • Low drive current • 4 V gate drive device can be driven from 5 V source

RENESAS

瑞萨

Silicon N Channel MOS FET High Speed Power Switching

Features • Low on-resistance RDS(on) = 6 mΩ typ. • Low drive current • 4 V gate drive device can be driven from 5 V source

HitachiHitachi Semiconductor

日立日立公司

Silicon N Channel MOS FET High Speed Power Switching

Features • Low on-resistance RDS(on) = 6 mΩ typ. • Low drive current • 4 V gate drive device can be driven from 5 V source

HitachiHitachi Semiconductor

日立日立公司

Silicon N Channel MOS FET High Speed Power Switching

Features • Low on-resistance RDS(on) = 6 mΩ typ. • Low drive current • 4 V gate drive device can be driven from 5 V source

RENESAS

瑞萨

Silicon N Channel MOS FET High Speed Power Switching

Features • Low on-resistance RDS(on) = 6 mΩ typ. • Low drive current • 4 V gate drive device can be driven from 5 V source

HitachiHitachi Semiconductor

日立日立公司

Silicon N Channel MOS FET High Speed Power Switching

Features • Low on-resistance RDS(on) = 6 mΩ typ. • Low drive current • 4 V gate drive device can be driven from 5 V source

RENESAS

瑞萨

Silicon N Channel MOS FET High Speed Power Switching

Features • Low on-resistance RDS(on) = 4.5 mΩ typ. • Low drive current • 4 V gate drive device can be driven from 5 V source

HitachiHitachi Semiconductor

日立日立公司

Silicon N Channel MOS FET High Speed Power Switching

Features • Low on-resistance RDS(on) =4.5 mΩ typ. • Low drive current • 4 V gate drive device can be driven from 5 V source

RENESAS

瑞萨

Silicon N Channel MOS FET High Speed Power Switching

Features • Low on-resistance RDS(on) =4.5 mΩ typ. • Low drive current • 4 V gate drive device can be driven from 5 V source

RENESAS

瑞萨

Silicon N Channel MOS Type

文件:192.87 Kbytes Page:6 Pages

TOSHIBA

东芝

Switching Regulator Applications

文件:186.45 Kbytes Page:6 Pages

TOSHIBA

东芝

isc N-Channel MOSFET Transistor

文件:323.36 Kbytes Page:2 Pages

ISC

无锡固电

Silicon N Channel MOS Type

文件:192.87 Kbytes Page:6 Pages

TOSHIBA

东芝

Switching Regulator Applications

文件:186.45 Kbytes Page:6 Pages

TOSHIBA

东芝

Chopper Regulator DC−DC Converter and Motor Drive Applications

文件:432.06 Kbytes Page:6 Pages

TOSHIBA

东芝

Silicon N Channel MOS Type Chopper Regulator DC−DC Converter and Motor Drive Applications

文件:712.89 Kbytes Page:6 Pages

TOSHIBA

东芝

isc N-Channel MOSFET Transistor

文件:327.67 Kbytes Page:2 Pages

ISC

无锡固电

Silicon N Channel MOS Type Chopper Regulator DC−DC Converter and Motor Drive Applications

文件:712.89 Kbytes Page:6 Pages

TOSHIBA

东芝

Chopper Regulator DC−DC Converter and Motor Drive Applications

文件:432.06 Kbytes Page:6 Pages

TOSHIBA

东芝

Chopper Regulator DC−DC Converter and Motor Drive Applications

文件:425.29 Kbytes Page:6 Pages

TOSHIBA

东芝

Silicon N Channel MOS Type Chopper Regulator DC−DC Converter and Motor Drive Applications

文件:712.09 Kbytes Page:6 Pages

TOSHIBA

东芝

isc N-Channel MOSFET Transistor

文件:328.08 Kbytes Page:2 Pages

ISC

无锡固电

Silicon N Channel MOS Type Chopper Regulator DC−DC Converter and Motor Drive Applications

文件:712.09 Kbytes Page:6 Pages

TOSHIBA

东芝

Chopper Regulator DC−DC Converter and Motor Drive Applications

文件:425.29 Kbytes Page:6 Pages

TOSHIBA

东芝

isc N-Channel MOSFET Transistor

文件:326.28 Kbytes Page:2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

文件:400.15 Kbytes Page:2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

文件:326.66 Kbytes Page:2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

文件:400.53 Kbytes Page:2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

文件:326.69 Kbytes Page:2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

文件:373.69 Kbytes Page:2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

文件:333.02 Kbytes Page:2 Pages

ISC

无锡固电

N-Channel 4 -V (D-S) MOSFET

文件:1.26336 Mbytes Page:7 Pages

VBSEMI

微碧半导体

2SK313产品属性

  • 类型

    描述

  • 型号

    2SK313

  • 功能描述

    TRANSISTOR | MOSFET | N-CHANNEL | 450V V(BR)DSS | 12A I(D) | TO-3

更新时间:2025-8-10 10:30:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
Toshiba Semiconductor and Stor
22+
TO3PL
9000
原厂渠道,现货配单
东芝
2024
TO3PL
58209
16余年资质 绝对原盒原盘代理渠道 更多数量
TOSHIBA/东芝
专业铁帽
TO-3
500
原装铁帽专营,代理渠道量大可订货
TOSHIBA
1922+
NA
9200
公司原装现货假一罚十特价欢迎来电咨询
NK/南科功率
2025+
TO-263
986966
国产
RENESAS/瑞萨
23+
TO-220
50000
全新原装正品现货,支持订货
HIT
24+
NA
5000
只做原装正品现货 欢迎来电查询15919825718
TOS
2021+
TO-220F
6800
原厂原装,欢迎咨询
23+
TO-92S
5000
原厂授权代理,海外优势订货渠道。可提供大量库存,详
RENESAS/瑞萨
新年份
TO-220
67430
一级代理原装正品现货,支持实单!

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