位置：首页 > IC中文资料第6253页 > 2SK3135
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
2SK3135 | Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 6 mΩ typ. • Low drive current • 4 V gate drive device can be driven from 5 V source | HitachiHitachi Semiconductor 日立日立公司 |   | |
2SK3135 | Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 6 mΩ typ. • Low drive current • 4 V gate drive device can be driven from 5 V source | RENESAS 瑞萨 | | |
2SK3135 | Silicon N Channel MOS FET High Speed Power Switching | RENESAS 瑞萨 | | |
2SK3135 | Silicon N Channel MOS FET High Speed Power Switching | HitachiHitachi Semiconductor 日立日立公司 | | |
Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 6 mΩ typ. • Low drive current • 4 V gate drive device can be driven from 5 V source | HitachiHitachi Semiconductor 日立日立公司 | | ||
Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 6 mΩ typ. • Low drive current • 4 V gate drive device can be driven from 5 V source | RENESAS 瑞萨 | | ||
Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 6 mΩ typ. • Low drive current • 4 V gate drive device can be driven from 5 V source | HitachiHitachi Semiconductor 日立日立公司 | | ||
Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 6 mΩ typ. • Low drive current • 4 V gate drive device can be driven from 5 V source | RENESAS 瑞萨 | | ||
isc N-Channel MOSFET Transistor 文件：326.69 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
isc N-Channel MOSFET Transistor 文件：373.69 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
Power MOSFETs | RENESAS 瑞萨 | |
2SK3135产品属性
- 类型
描述
- 型号
2SK3135
- 制造商
HITACHI
- 制造商全称
Hitachi Semiconductor
- 功能描述
Silicon N Channel MOS FET High Speed Power Switching
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
RENESAS |
12+ |
TO-263 |
250 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
日立 |
22+ |
220 |
6000 |
十年配单,只做原装 |
|||
NK/南科功率 |
2025+ |
TO-263 |
986966 |
国产 |
|||
HITACHI/日立 |
2024 |
TO-252 |
500185 |
16余年资质 绝对原盒原盘代理渠道 更多数量 |
|||
日立 |
24+ |
TO-262/263 |
6430 |
原装现货/欢迎来电咨询 |
|||
RENESAS |
23+ |
TO-263 |
250 |
全新原装正品现货,支持订货 |
|||
RENESAS |
2511 |
TO-263 |
250 |
电子元器件采购降本 30%!盈慧通原厂直采,砍掉中间差价 |
|||
TOSHIBA/东芝 |
23+ |
SOT-252 |
688888 |
原厂授权代理,海外优势订货渠道。可提供大量库存,详 |
|||
24+ |
60000 |
||||||
HIT |
24+ |
NA |
5000 |
只做原装正品现货 欢迎来电查询15919825718 |
2SK3135规格书下载地址
2SK3135参数引脚图相关
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属性 参数值 商品目录 结型场效应晶体管（JFET） 连续漏极电流（Id）（25°C 时） 50mA 漏源电压（Vdss） 15V 类型 N 沟道 最大功率耗散（Ta=25°C） 200mW
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2020-3-28
DdatasheetPDF页码索引
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