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2SK3134

Silicon N Channel MOS FET High Speed Power Switching

Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on)= 4 mΩ typ. • Low drive current • 4 V gate drive device can be driven from 5 V source

HITACHIHitachi Semiconductor

日立日立公司

2SK3134

Silicon N Channel MOS FET High Speed Power Switching

Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on)= 4 mΩ typ. • Low drive current • 4 V gate drive device can be driven from 5 V source

RENESAS

瑞萨

2SK3134

Silicon N Channel MOS FET High Speed Power Switching

Silicon N Channel MOS FET\nHigh Speed Power Switching •  Low on-resistance\n   RDS(on)= 4 mΩ typ.\n•  Low drive current\n•  4 V gate drive device can be driven from 5 V source;

HITACHIHitachi Semiconductor

日立日立公司

2SK3134

Silicon N Channel MOS FET High Speed Power Switching

RENESAS

瑞萨

Silicon N Channel MOS FET High Speed Power Switching

Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on)= 4 mΩ typ. • Low drive current • 4 V gate drive device can be driven from 5 V source

HITACHIHitachi Semiconductor

日立日立公司

Silicon N Channel MOS FET High Speed Power Switching

Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on)= 4 mΩ typ. • Low drive current • 4 V gate drive device can be driven from 5 V source

RENESAS

瑞萨

Silicon N Channel MOS FET High Speed Power Switching

Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on)= 4 mΩ typ. • Low drive current • 4 V gate drive device can be driven from 5 V source

HITACHIHitachi Semiconductor

日立日立公司

Silicon N Channel MOS FET High Speed Power Switching

Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on)= 4 mΩ typ. • Low drive current • 4 V gate drive device can be driven from 5 V source

RENESAS

瑞萨

isc N-Channel MOSFET Transistor

文件:326.66 Kbytes Page:2 Pages

ISC

无锡固电

Power MOSFETs

RENESAS

瑞萨

isc N-Channel MOSFET Transistor

文件:400.53 Kbytes Page:2 Pages

ISC

无锡固电

2SK3134产品属性

  • 类型

    描述

  • 封装类型:

    LDPAK(L)/TO-262

  • Nch/Pch:

    Nch

  • 通道数:

    Single

  • VDSS (V) 最大值:

    30

  • ID (A):

    75

  • RDS (ON)(mΩ) 最大值@4V或4.5V:

    8.5

  • RDS (ON)(mΩ) 最大值@10V或8V:

    5

  • Ciss (pF) 典型值:

    6800

  • Vgs (off) (V) 最大值:

    2.5

  • VGSS (V):

    20

  • Pch (W):

    100

  • 应用:

    Industrial

  • 安装类型:

    Through Hole

  • QG (nC) 典型值:

    130

更新时间:2026-5-15 19:15:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
RENESAS
22+
TO-251
20000
公司只有原装 品质保证
HIT
24+
NA
5000
只做原装正品现货 欢迎来电查询15919825718
25+
150
公司现货库存
RENESAS
24+
TO-251
16900
原装正品现货支持实单
RENESAS
21+
TO-252
10
一级代理,专注军工、汽车、医疗、工业、新能源、电力
24+
60000
25+
150
公司现货库存
RENESAS
26+
TO-251
360000
进口原装现货
NEC
26+
原厂原封装
86720
全新原装正品价格最实惠 假一赔百
hit
25+
500000
行业低价,代理渠道

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