位置：首页 > IC中文资料第6253页 > 2SK3135L
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
2SK3135L | Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 6 mΩ typ. • Low drive current • 4 V gate drive device can be driven from 5 V source | HITACHIHitachi Semiconductor 日立日立公司 |   | |
2SK3135L | isc N-Channel MOSFET Transistor 文件：326.69 Kbytes Page：2 Pages | ISC 无锡固电 | | |
2SK3135L | Transistors>Switching/MOSFETs | RENESAS 瑞萨 | | |
Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 6 mΩ typ. • Low drive current • 4 V gate drive device can be driven from 5 V source | RENESAS 瑞萨 | | ||
Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 6 mΩ typ. • Low drive current • 4 V gate drive device can be driven from 5 V source | RENESAS 瑞萨 | | ||
Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 6 mΩ typ. • Low drive current • 4 V gate drive device can be driven from 5 V source | HITACHIHitachi Semiconductor 日立日立公司 | | ||
Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 6 mΩ typ. • Low drive current • 4 V gate drive device can be driven from 5 V source | HITACHIHitachi Semiconductor 日立日立公司 | | ||
Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 6 mΩ typ. • Low drive current • 4 V gate drive device can be driven from 5 V source | RENESAS 瑞萨 | |
2SK3135L产品属性
- 类型
描述
- 型号
2SK3135L
- 制造商
HITACHI
- 制造商全称
Hitachi Semiconductor
- 功能描述
Silicon N Channel MOS FET High Speed Power Switching
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
PANASONIC/松下 |
06+ |
SOT23 |
2270 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
PANASONIC |
25+ |
SOT89 |
2987 |
只售原装自家现货!诚信经营!欢迎来电 |
|||
ON/安森美 |
23+ |
TO-126 |
69820 |
终端可以免费供样,支持BOM配单! |
|||
24+ |
TO-3 |
10000 |
|||||
NEC |
26+ |
原厂原封装 |
86720 |
全新原装正品价格最实惠 假一赔百 |
|||
PANASONIC/松下 |
22+ |
TO-92S |
20000 |
公司只有原装 品质保证 |
|||
Panasonic Electronic Component |
22+ |
TO243AA |
9000 |
原厂渠道,现货配单 |
|||
PANASONIC/松下 |
2447 |
SOT89 |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
PANASONIC |
原厂封装 |
9800 |
原装进口公司现货假一赔百 |
||||
PANASONIC/松下 |
2023+ |
SOT23 |
8800 |
正品渠道现货 终端可提供BOM表配单。 |
2SK3135L规格书下载地址
2SK3135L参数引脚图相关
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2SK3135L数据表相关新闻
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2SK3105-T1B-A找代理商上深圳百域芯科技 芯片详细信息 Source Content uid: 2SK3484-Z-E1-AZ Manufacturer Part Number: 2SK3484-Z-E1-AZ Brand_Name: Renesas Rohs Code: Yes Part Life Cycle Code: Not Recommended Ihs Manufacturer: RENESAS ELECTRONICS CORP Part Package
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2SK3105-T1B-A找代理商上深圳百域芯科技 芯片详细信息 Source Content uid: 2SK3105-T1B-A Manufacturer Part Number: 2SK3105-T1B-A Brand_Name: Renesas Pbfree Code: Yes Rohs Code: Yes Part Life Cycle Code: Obsolete Ihs Manufacturer: RENESAS ELECTRONICS CORP P
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属性 参数值 商品目录 结型场效应晶体管（JFET） 连续漏极电流（Id）（25°C 时） 50mA 漏源电压（Vdss） 15V 类型 N 沟道 最大功率耗散（Ta=25°C） 200mW
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2020-3-28
DdatasheetPDF页码索引
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