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2SK16价格

参考价格：￥0.9100

型号：2SK160 品牌：NEC 备注：这里有2SK16多少钱，2025年最近7天走势，今日出价，今日竞价，2SK16批发/采购报价，2SK16行情走势销售排行榜，2SK16报价。

型号	功能描述	生产厂家企业	LOGO
2SK160	N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N	NEC 瑞萨	NEC
2SK160	JUNCTION FIELD EFFECT TRANSISTORS AF & RF AMPLIFIER N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR MINI MOLD	RENESAS 瑞萨	RENESAS
2SK1600	Drain Current ?밒D= 3A@ TC=25C DESCRIPTION • Drain Current –ID= 3A@ TC=25℃ • Drain Source Voltage- : VDSS=800V(Min) APPLICATIONS • Designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers.	ISC 无锡固电	ISC
2SK1600	FIELD EFFECT TRANSISTOR SILICON N-CHANNEL MOS TYPE HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS. DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS.	TOSHIBA 东芝	TOSHIBA
2SK1602	HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS / DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS. DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS.	TOSHIBA 东芝	TOSHIBA
2SK1602	Drain Current ?밒D= 2.8A@ TC=25C DESCRIPTION • Drain Current –ID= 2.8A@ TC=25℃ • Drain Source Voltage- : VDSS=800V(Min) APPLICATIONS • Designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers.	ISC 无锡固电	ISC
2SK1603	Drain Current ?밒D= 2.5A@ TC=25C DESCRIPTION • Drain Current –ID= 2.5A@ TC=25℃ • Drain Source Voltage- : VDSS=900V(Min) APPLICATIONS • Designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers.	ISC 无锡固电	ISC
2SK1606	Silicon N-Channel Power F-MOSFET Features High avalanche energy capacity VGSS: 30V guaranteed Low RDS(on), high-speed switching characteristic Applications High-speed switching (switching power supply) For high-frequency power amplification Absolute Maximum Ratings (TC = 25°C)	Panasonic 松下	Panasonic
2SK160A	N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N	NEC 瑞萨	NEC
2SK161	N CHANNEL JUNCTION TYPE (FM TUNER, VHF BAND AMPLIFIER APPLICATIONS) Field Effect Transistor Silicon N Channel Junction Type FM Tuner Applications VHF Band Amplifier Applications Low noise figure: NF = 2.5dB (typ.) (f = 100 MHz) High forward transfer admittance: \|Yfs\| = 9 mS (typ.) Extremely low reverse transfer capacitance: Crss= 0.1 pF	TOSHIBA 东芝	TOSHIBA
2SK161	MINI PACKAGE SERIES Application General Purpose > Low Noise High Voltage High Current High Current Low Impedance Low Noise (NEW Audio Drive & Out NEW High B Muting & SW FM RF, MIX OSC AM CONV. FM/AM IF AM FF, CONV IF FM/AM RF, MIX OSC Application General Purpose High IYfsl Low Noise Analog SW & Ge	TOSHIBA 东芝	TOSHIBA
2SK1611	Silicon N-Channel Power F-MOS FET Silicon N-Channel Power F-MOS FET ■Features ●High avalanche energy capacity ●VGSS: 30V guaranteed ●Low RDS(on), high-speed switching characteristic ■Applications ●High-speed switching (switching power supply, AC adaptor) ●For high-frequency power amplification	Panasonic 松下	Panasonic
2SK1611	isc N-Channel MOSFET Transistor FEATURES · Drain Current -ID= 3A@ TC=25℃ · Drain Source Voltage -VDSS= 800V(Min) · Static Drain-Source On-Resistance -RDS(on) = 4Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.	ISC 无锡固电	ISC
2SK1612	isc N-Channel MOSFET Transistor FEATURES · Drain Current -ID= 3A@ TC=25℃ · Drain Source Voltage -VDSS= 800V(Min) · Static Drain-Source On-Resistance -RDS(on) = 5Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.	ISC 无锡固电	ISC
2SK1613	isc N-Channel MOSFET Transistor FEATURES · Drain Current -ID= 5A@ TC=25℃ · Drain Source Voltage -VDSS= 900V(Min) · Static Drain-Source On-Resistance -RDS(on) = 2.8Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.	ISC 无锡固电	ISC
2SK1618	Silicon N-Channel MOS FET Silicon N-Channel MOS FET Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter Application High speed power switching	HitachiHitachi Semiconductor 日立日立公司	Hitachi
2SK1618L	Silicon N-Channel MOS FET Silicon N-Channel MOS FET Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter Application High speed power switching	HitachiHitachi Semiconductor 日立日立公司	Hitachi
2SK1618L	isc N-Channel MOSFET Transistor FEATURES · Drain Current -ID= 3A@ TC=25℃ · Drain Source Voltage -VDSS= 600V(Min) · Static Drain-Source On-Resistance -RDS(on) = 5Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.	ISC 无锡固电	ISC
2SK1618S	isc N-Channel MOSFET Transistor FEATURES · Drain Current -ID= 3A@ TC=25℃ · Drain Source Voltage -VDSS= 600V(Min) · Static Drain-Source On-Resistance -RDS(on) = 5Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.	ISC 无锡固电	ISC
2SK1618S	Silicon N-Channel MOS FET Silicon N-Channel MOS FET Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter Application High speed power switching	HitachiHitachi Semiconductor 日立日立公司	Hitachi
2SK162	Field Effect Transistor SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N	NEC 瑞萨	NEC
2SK1620	Silicon N-Channel MOS FET Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator, DC-DC converter and motor driver Application High speed power switching	HitachiHitachi Semiconductor 日立日立公司	Hitachi
2SK1620	Silicon N Channel MOS FET Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator, DC-DC converter and motor driver Application High speed power switching	RENESAS 瑞萨	RENESAS
2SK1620L	Silicon N Channel MOS FET Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator, DC-DC converter and motor driver Application High speed power switching	RENESAS 瑞萨	RENESAS
2SK1620L	Silicon N-Channel MOS FET Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator, DC-DC converter and motor driver Application High speed power switching	HitachiHitachi Semiconductor 日立日立公司	Hitachi
2SK1620L	isc N-Channel MOSFET Transistor FEATURES · Drain Current -ID= 10A@ TC=25℃ · Drain Source Voltage -VDSS= 150V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.15Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.	ISC 无锡固电	ISC
2SK1620L-E	Silicon N Channel MOS FET Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator, DC-DC converter and motor driver Application High speed power switching	RENESAS 瑞萨	RENESAS
2SK1620S	Silicon N Channel MOS FET Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator, DC-DC converter and motor driver Application High speed power switching	RENESAS 瑞萨	RENESAS
2SK1620S	Silicon N-Channel MOS FET Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator, DC-DC converter and motor driver Application High speed power switching	HitachiHitachi Semiconductor 日立日立公司	Hitachi
2SK1620S	isc N-Channel MOSFET Transistor FEATURES · Drain Current -ID= 10A@ TC=25℃ · Drain Source Voltage -VDSS= 150V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.15Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.	ISC 无锡固电	ISC
2SK1620STL-E	Silicon N Channel MOS FET Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator, DC-DC converter and motor driver Application High speed power switching	RENESAS 瑞萨	RENESAS
2SK1621L	Silicon N-Channel MOS FET Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator, DC-DC converter and motor driver Application High speed power switching	HitachiHitachi Semiconductor 日立日立公司	Hitachi
2SK1621L	isc N-Channel MOSFET Transistor FEATURES · Drain Current -ID= 7A@ TC=25℃ · Drain Source Voltage -VDSS= 250V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.55Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.	ISC 无锡固电	ISC
2SK1621S	Silicon N-Channel MOS FET Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator, DC-DC converter and motor driver Application High speed power switching	HitachiHitachi Semiconductor 日立日立公司	Hitachi
2SK1622	Silicon N-Channel MOS FET Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device – Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive Application High speed power switching	HitachiHitachi Semiconductor 日立日立公司	Hitachi
2SK1622L	Silicon N-Channel MOS FET Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device – Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive Application High speed power switching	HitachiHitachi Semiconductor 日立日立公司	Hitachi
2SK1622L	isc N-Channel MOSFET Transistor FEATURES · Drain Current -ID= 25A@ TC=25℃ · Drain Source Voltage -VDSS= 60V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.04Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.	ISC 无锡固电	ISC
2SK1622S	isc N-Channel MOSFET Transistor FEATURES · Drain Current -ID= 25A@ TC=25℃ · Drain Source Voltage -VDSS= 60V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.04Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.	ISC 无锡固电	ISC
2SK1622S	Silicon N-Channel MOS FET Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device – Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive Application High speed power switching	HitachiHitachi Semiconductor 日立日立公司	Hitachi
2SK1623	Silicon N-Channel MOS FET Silicon N-Channel MOS FET Features • Low on-resistance • High speed switching • 4 V gate drive device  Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive Application High speed power switching	HitachiHitachi Semiconductor 日立日立公司	Hitachi
2SK1623	Silicon N Channel MOS FET Silicon N Channel MOS FET Features • Low on-resistance • High speed switching • 4 V gate drive device  Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive Application High speed power switching	RENESAS 瑞萨	RENESAS
2SK1623L	Silicon N-Channel MOS FET Silicon N-Channel MOS FET Features • Low on-resistance • High speed switching • 4 V gate drive device  Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive Application High speed power switching	HitachiHitachi Semiconductor 日立日立公司	Hitachi
2SK1623L	Silicon N Channel MOS FET Silicon N Channel MOS FET Features • Low on-resistance • High speed switching • 4 V gate drive device  Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive Application High speed power switching	RENESAS 瑞萨	RENESAS
2SK1623L-E	Silicon N Channel MOS FET Silicon N Channel MOS FET Features • Low on-resistance • High speed switching • 4 V gate drive device  Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive Application High speed power switching	RENESAS 瑞萨	RENESAS
2SK1623S	Silicon N Channel MOS FET Silicon N Channel MOS FET Features • Low on-resistance • High speed switching • 4 V gate drive device  Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive Application High speed power switching	RENESAS 瑞萨	RENESAS
2SK1623S	Silicon N-Channel MOS FET Silicon N-Channel MOS FET Features • Low on-resistance • High speed switching • 4 V gate drive device  Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive Application High speed power switching	HitachiHitachi Semiconductor 日立日立公司	Hitachi
2SK1623S	isc N-Channel MOSFET Transistor FEATURES · Drain Current -ID= 20A@ TC=25℃ · Drain Source Voltage -VDSS= 100V(Min) · Static Drain-Source On-Resistance -RDS(on) = 85mΩ(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.	ISC 无锡固电	ISC
2SK1623STL-E	Silicon N Channel MOS FET Silicon N Channel MOS FET Features • Low on-resistance • High speed switching • 4 V gate drive device  Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive Application High speed power switching	RENESAS 瑞萨	RENESAS
2SK1624	Silicon N-Channel MOS FET Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter Application High speed power switching	HitachiHitachi Semiconductor 日立日立公司	Hitachi
2SK1624L	Silicon N-Channel MOS FET Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter Application High speed power switching	HitachiHitachi Semiconductor 日立日立公司	Hitachi
2SK1624L	isc N-Channel MOSFET Transistor FEATURES · Drain Current -ID= 4A@ TC=25℃ · Drain Source Voltage -VDSS= 600V(Min) · Static Drain-Source On-Resistance -RDS(on) = 2.4Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.	ISC 无锡固电	ISC
2SK1624S	isc N-Channel MOSFET Transistor FEATURES · Drain Current -ID= 4A@ TC=25℃ · Drain Source Voltage -VDSS= 600V(Min) · Static Drain-Source On-Resistance -RDS(on) = 2.4Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.	ISC 无锡固电	ISC
2SK1624S	Silicon N-Channel MOS FET Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter Application High speed power switching	HitachiHitachi Semiconductor 日立日立公司	Hitachi
2SK1625	Silicon N-Channel MOS FET Silicon N-Channel MOS FET Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter Application High speed power switching	HitachiHitachi Semiconductor 日立日立公司	Hitachi
2SK1625L	Silicon N-Channel MOS FET Silicon N-Channel MOS FET Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter Application High speed power switching	HitachiHitachi Semiconductor 日立日立公司	Hitachi
2SK1625L	isc N-Channel MOSFET Transistor FEATURES · Drain Current -ID= 7A@ TC=25℃ · Drain Source Voltage -VDSS= 600V(Min) · Static Drain-Source On-Resistance -RDS(on) = 1.3Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.	ISC 无锡固电	ISC
2SK1625S	isc N-Channel MOSFET Transistor FEATURES · Drain Current -ID= 7A@ TC=25℃ · Drain Source Voltage -VDSS= 600V(Min) · Static Drain-Source On-Resistance -RDS(on) = 1.3Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.	ISC 无锡固电	ISC
2SK1625S	Silicon N-Channel MOS FET Silicon N-Channel MOS FET Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter Application High speed power switching	HitachiHitachi Semiconductor 日立日立公司	Hitachi
2SK1626	Silicon N-Channel MOS FET Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter Application High speed power switching	HitachiHitachi Semiconductor 日立日立公司	Hitachi
2SK1626	Silicon N Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter	RENESAS 瑞萨	RENESAS

2SK16产品属性

类型
描述
型号
2SK16
制造商
Panasonic Industrial Company
功能描述
TRANSISTOR

2SK16供应商更多...

更新时间：2025-12-25 23:01:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市得捷芯城科技有限公司	2SK1657-T1B	NEC	24+	NA/	845	优势代理渠道,原装正品,可全系列订货开增值税票	询价
深圳市科芯源微电子有限公司	2SK1657-T1B	NEC	25+	SOT-23	54648	百分百原装现货实单必成	询价
深圳市富芯乐电子科技有限公司	2SK1657	NEC	24+	SOT-23	5000	只做原装正品现货欢迎来电查询15919825718	询价
深圳市创新迹电子有限公司	2SK1657	RENESAS/瑞萨	22+	SOT-23	20000	只做原装	询价
深圳市赛美科科技有限公司	2SK1657-T1B	NEC	新年份	SOT23	12000	原装正品大量现货,要多可发货,实单带接受价来谈!	询价
深圳市振宏微科技有限公司	2SK1657	SOT-23	23+	NA	15659	振宏微专业只做正品,假一罚百!	询价
贸泽芯城（深圳）电子科技有限公司	2SK1656	NEC	23+	TO-92S	30000	原厂授权代理,海外优势订货渠道。可提供大量库存,详	询价
深圳市一线半导体有限公司	2SK1656	NEC	24+		60000		询价
洪芯国际半导体（深圳）有限公司	2SK1657/G19	NEC	25+	原厂原封装	86720	全新原装进口现货价格优惠本公司承诺原装正品假一赔	询价
深圳市英瑞尔电子科技有限公司	2SK1657-T1B	NEC	24+	SOT23	12000	原装现货假一赔十	询价

2SK16芯片相关品牌

2SK16规格书下载地址

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2SK16数据表相关新闻

2SJ652-1E 绝缘栅场效应管(MOSFET)
2SJ652-1E 原装正品现货供应
2024-3-23
2SD882SL-TO92B-P-TG_UTC代理商
2SD882SL-TO92B-P-TG_UTC代理商
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2SK2415-Z-E1-AZ找代理商上深圳百域芯科技
2SK2415-Z-E1-AZ找代理商上深圳百域芯科技芯片详细信息 Source Content uid: 2SK2415-Z-E1-AZ Manufacturer Part Number: 2SK2415-Z-E1-AZ Brand_Name: Renesas Rohs Code: Yes Part Life Cycle Code: Obsolete Ihs Manufacturer: RENESAS ELECTRONICS CORP Package Descriptio
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2SK1485-T1
2SK1485-T1，当天发货0755-82732291全新原装现货或门市自取.
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2019-10-30
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2SK1985-01MR，全新原装当天发货或门市自取0755-82732291.
2019-10-30

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2SK16价格

2SK16产品属性

2SK16供应商更多...

2SK16芯片相关品牌

2SK16规格书下载地址

2SK16参数引脚图相关

2SK16数据表相关新闻

2SJ652-1E 绝缘栅场效应管(MOSFET)

2SD882SL-TO92B-P-TG_UTC代理商

2SK2415-Z-E1-AZ找代理商上深圳百域芯科技

2SK1485-T1

2SK1985

2SK1985-01MR

DdatasheetPDF页码索引