N CHANNEL JUNCTION TYPE (FM TUNER, VHF BAND AMPLIFIER APPLICATIONS)

Field Effect Transistor Silicon N Channel Junction Type FM Tuner Applications VHF Band Amplifier Applications
 Low noise figure: NF = 2.5dB (typ.) (f = 100 MHz)
 High forward transfer admittance: |Yfs| = 9 mS (typ.)
 Extremely low reverse transfer capacitance: Crss= 0.1 pF

MINI PACKAGE SERIES

Application General Purpose > Low Noise High Voltage High Current High Current Low Impedance Low Noise (NEW Audio Drive & Out NEW High B Muting & SW FM RF, MIX OSC AM CONV. FM/AM IF AM FF, CONV IF FM/AM RF, MIX OSC Application General Purpose High IYfsl Low Noise Analog SW & Ge

Field Effect Transistor Silicon N Channel Junction Type FM Tuner Applications VHF Band Amplifier Applications

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 3A@ TC=25℃ · Drain Source Voltage -VDSS= 800V(Min) · Static Drain-Source On-Resistance -RDS(on) = 4Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

Silicon N-Channel Power F-MOS FET

Silicon N-Channel Power F-MOS FET ■Features ●High avalanche energy capacity ●VGSS: 30V guaranteed ●Low RDS(on), high-speed switching characteristic ■Applications ●High-speed switching (switching power supply, AC adaptor) ●For high-frequency power amplification

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 3A@ TC=25℃ · Drain Source Voltage -VDSS= 800V(Min) · Static Drain-Source On-Resistance -RDS(on) = 5Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 5A@ TC=25℃ · Drain Source Voltage -VDSS= 900V(Min) · Static Drain-Source On-Resistance -RDS(on) = 2.8Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

Silicon N-Channel MOS FET

Silicon N-Channel MOS FET Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter Application High speed power switching

Silicon N-Channel MOS FET

Silicon N-Channel MOS FET Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter Application High speed power switching

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 3A@ TC=25℃ · Drain Source Voltage -VDSS= 600V(Min) · Static Drain-Source On-Resistance -RDS(on) = 5Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 3A@ TC=25℃ · Drain Source Voltage -VDSS= 600V(Min) · Static Drain-Source On-Resistance -RDS(on) = 5Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

Silicon N-Channel MOS FET

Silicon N-Channel MOS FET Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter Application High speed power switching

Drain Current ?밒D=13A@ TC=25C

文件：67.53 Kbytes Page：2 Pages

isc N-Channel MOSFET Transistor

文件：316.75 Kbytes Page：2 Pages

Silicon N-Channel Power F-MOS FET

Silicon N-Channel Power F-MOS FET

isc N-Channel MOSFET Transistor

文件：316.54 Kbytes Page：2 Pages

Drain Current ?밒D=5A@ TC=25C

文件：64.569 Kbytes Page：2 Pages

Drain Current ?밒D=8A@ TC=25C

文件：67.51 Kbytes Page：2 Pages

N-Channel 650 V (D-S) MOSFET

文件：1.08593 Mbytes Page：9 Pages

isc N-Channel MOSFET Transistor

文件：299.84 Kbytes Page：2 Pages

isc N-Channel MOSFET Transistor

文件：299.31 Kbytes Page：2 Pages

N-Channel 650 V (D-S) MOSFET

文件：1.08593 Mbytes Page：9 Pages