MOS FIELD EFFECT TRANSISTOR

DESCRIPTION The 2SK1580 is an N -channel vertical type MOS FET which can be driven by 2.5 V power supply. As the 2SK1580 is driven by low voltage and does not require consideration of driving current, it is suitable for appliance including VCR cameras and headphone stereos which need power savin

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL MOS FET DESCRIPTION The 2SK1580 is an N -channel vertical type MOS FET which can be driven by 2.5 V power supply. As the 2SK1580 is driven by low voltage and does not require consideration of driving current, it is suitable for appliance including VCR cameras and hea

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL MOS FET DESCRIPTION The 2SK1581, N-channel vertical type MOS FET, can be driven by 2.5 V power supply. As the 2SK1581 is driven by low voltage and does not require consideration of driving current, it is suitable for appliances including VCR cameras and headphone stere

N-CHANNEL MOS FET FOR SWITCHING

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

MOS Field Effect Transistor

Features ● Can be driven by Ics having a 3V single power supply. ● Not necessry to consider driving current because of its thgh input impedance. ● Possible to reduce the number of parts by omitting the bias resistor

N-CHANNEL MOSFET FOR SWITCHING

Description The 2SK1581C, N-channel vertical type MOSFET designed for general-purpose switch, is a device which can be driven directly by a 2.5 V power source. Features Directly driven by a 2.5 V power source. Low on-state resistance RDS(on)1 = 0.57  MAX. (VGS = 4.5 V, ID = 0.3 A

N-CHANNEL MOSFET FOR SWITCHING

Description The 2SK1581C, N-channel vertical type MOSFET designed for general-purpose switch, is a device which can be driven directly by a 2.5 V power source. Features Directly driven by a 2.5 V power source. Low on-state resistance RDS(on)1 = 0.57  MAX. (VGS = 4.5 V, ID = 0.3 A

N-CHANNEL MOSFET FOR SWITCHING

Description The 2SK1581C, N-channel vertical type MOSFET designed for general-purpose switch, is a device which can be driven directly by a 2.5 V power source. Features Directly driven by a 2.5 V power source. Low on-state resistance RDS(on)1 = 0.57  MAX. (VGS = 4.5 V, ID = 0.3 A

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL MOS FET DESCRIPTION The 2SK1582, N-channel vertical type MOS FET, is a switching device which can be driven directly by the output of ICs having a 5 V power source. The 2SK1582 has excellent switching characteristics and is suitable for use as a high-speed switching de

N-CHANNEL MOS FET FOR SWITCHING

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MOS Field Effect Transistor

Features ● Can be driven by Ics having a 5V single power supply. ● Not necessry to consider driving current because of its thgh input impedance. ● Possible to reduce the number of parts by omitting the bias resistor

MOS Field Effect Transistor

Features ● Can be driven by Ics having a3V single power supply. ● Has low on-state resistance RDS(on)=2.0 Ω MAX.@VGS=2.5V,ID=0.3A RDS(on)=1.5 Ω MAX.@VGS=4.0V,ID=0.3A

N-CHANNEL MOS FET FOR SWITCHING

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL MOS FET DESCRIPTION The 2SK1583 is an N-channel vertical type MOS FET can be driven by 2.5 V power supply. As the 2SK1583 is driven by low voltage and does not require consideration of driving current, it is suitable for appliances including VCR cameras and headphone s

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL MOS FET DESCRIPTION The 2SK1584 is a switching device which can be driven directly by a 5 V power source. The 2SK1584 features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as actuator driver. FEATURES • Ca

N-CHANNEL MOS FET FOR SWITCHING

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MOS Field Effect Transistor

Features ● Directly driven by Ics having a 5V P ● Has low on-state resistance RDS(on)=2.0Ω MAX.@VGS=4.0V,ID=0.3A RDS(on)=1.5Ω MAX.@VGS=10V,ID=0.3A

MOS Field Effect Transistor

Features ● Directly driven by ICs having a 3 V power supply. ● Has low on-state resistance. RDS(on)1 = 1.2 Ω MAX. (VGS = 2.5 V, ID = 0.5 A) RDS(on)2 = 1.0 Ω MAX. (VGS = 4.0 V, ID = 0.5 A)

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL MOSFET DESCRIPTION The 2SK1585 is an N-channel vertical type MOSFET which can be driven by the 2.5 V power supply. As the 2SK1585 is driven by low voltage and does not require consideration of driving current, it is suitable for appliances including VCR cameras and hea

N-CHANNEL MOS FET FOR SWITCHING

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

N-CHANNEL MOS FET FOR SWITCHING

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

MOS FIELD EFFECT TRANSISTOR

N-CHANNEL MOS FET FOR SWITCHING

MOS Field Effect Transistor

Features ● Directly driven by Ics having a 3V power supply. ● Has low on-state resistance RDS(on)=1.0 MAX.@VGS=4.0V,ID=0.5A RDS(on)=0.6 MAX.@VGS=10V,ID=0.5A

MOS FIELD EFFECT TRANSISTOR

N-CHANNEL MOS FET FOR SWITCHING

MOS Field Effect Transistor

Features ● Directly driven by Ics having a 3V power supply. ● Has low on-state resistance RDS(on)=0.8 Ω MAX.@VGS=2.5V,ID=0.5A RDS(on)=0.5 Ω MAX.@VGS=4.0V,ID=1.0A

N-CHANNEL MOS FET FOR SWITCHING

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

N-CHANNEL MOS FET FOR SWITCHING

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

MOS Field Effect Transistor

Features ● Directly driven by Ics having a 3V power supply. ● Has low on-state resistance RDS(on)=0.5 Ω MAX.@VGS=2.5V,ID=1.0A RDS(on)=0.3 Ω MAX.@VGS=4.0V,ID=1.5A

MOS FIELD EFFECT TRANSISTOR

N-CHANNEL MOSFET FOR SWITCHING DESCRIPTION The 2SK1588 is an N-channel vertical type MOSFET which can be driven by 2.5 V power supply. As the MOSFET is driven by low voltage and does not require consideration of driving current, it is suitable for appliances including VCR cameras and head

N-Channel MOSFET

■ Features ● VDS (V) = 16V ● ID = 3 A ● RDS(ON)

MOS FIELD EFFECT TRANSISTOR

N-CHANNEL MOSFET FOR SWITCHING DESCRIPTION The 2SK1589, N-channel vertical type MOSFET, is a switching device which can be driven directly by the output of ICs having a 5 V power source. As the MOSFET has low on-state resistance and excellent switching characteristics, it is suitable for

MOS Field Effect Transistor

Features ● Directly driven by Ics having a 5V power supply. ● Not necessary to consider driving current because of its high input impedance.

N-CHANNEL MOS FET FOR SWITCHING

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

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