N-CHANNEL MOSFET FOR SWITCHING

Description The 2SK1581C, N-channel vertical type MOSFET designed for general-purpose switch, is a device which can be driven directly by a 2.5 V power source. Features Directly driven by a 2.5 V power source. Low on-state resistance RDS(on)1 = 0.57  MAX. (VGS = 4.5 V, ID = 0.3 A

Power MOSFETs for Automotive

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL MOS FET DESCRIPTION The 2SK1581, N-channel vertical type MOS FET, can be driven by 2.5 V power supply. As the 2SK1581 is driven by low voltage and does not require consideration of driving current, it is suitable for appliances including VCR cameras and headphone stere

N-CHANNEL MOS FET FOR SWITCHING

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

MOS Field Effect Transistor

Features ● Can be driven by Ics having a 3V single power supply. ● Not necessry to consider driving current because of its thgh input impedance. ● Possible to reduce the number of parts by omitting the bias resistor

N-CHANNEL MOSFET FOR SWITCHING

Description The 2SK1581C, N-channel vertical type MOSFET designed for general-purpose switch, is a device which can be driven directly by a 2.5 V power source. Features Directly driven by a 2.5 V power source. Low on-state resistance RDS(on)1 = 0.57  MAX. (VGS = 4.5 V, ID = 0.3 A

N-CHANNEL MOSFET FOR SWITCHING

Description The 2SK1581C, N-channel vertical type MOSFET designed for general-purpose switch, is a device which can be driven directly by a 2.5 V power source. Features Directly driven by a 2.5 V power source. Low on-state resistance RDS(on)1 = 0.57  MAX. (VGS = 4.5 V, ID = 0.3 A