N-CHANNEL MOS FET FOR SWITCHING

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丝印代码：G14；MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL MOS FET DESCRIPTION The 2SK1581, N-channel vertical type MOS FET, can be driven by 2.5 V power supply. As the 2SK1581 is driven by low voltage and does not require consideration of driving current, it is suitable for appliances including VCR cameras and headphone stere

MOS Field Effect Transistor

Features ● Can be driven by Ics having a 3V single power supply. ● Not necessry to consider driving current because of its thgh input impedance. ● Possible to reduce the number of parts by omitting the bias resistor

Power MOSFETs-Power MOSFETs for Automotive

Power MOSFETs for Automotive

Support is limited to customers who have already adopted these products.\n\nThe 2SK1581C, N-channel vertical type MOSFET designed for general-purpose switch, is a device which can be driven directly by a 2. 5 V power source. • Directly driven by a 2.5 V power source.\n• Low on-state resistance RDS(on)1 = 0.57 Ω MAX. (VGS = 4.5 V, ID = 0.3 A) RDS(on)2 = 0.60 Ω MAX. (VGS = 4.0 V, ID = 0.3 A) RDS(on)3 = 0.88 Ω MAX. (VGS = 2.5 V, ID = 0.15 A);

N-CHANNEL MOSFET FOR SWITCHING

Description The 2SK1581C, N-channel vertical type MOSFET designed for general-purpose switch, is a device which can be driven directly by a 2.5 V power source. Features Directly driven by a 2.5 V power source. Low on-state resistance RDS(on)1 = 0.57  MAX. (VGS = 4.5 V, ID = 0.3 A

N-CHANNEL MOSFET FOR SWITCHING

Description The 2SK1581C, N-channel vertical type MOSFET designed for general-purpose switch, is a device which can be driven directly by a 2.5 V power source. Features Directly driven by a 2.5 V power source. Low on-state resistance RDS(on)1 = 0.57  MAX. (VGS = 4.5 V, ID = 0.3 A

N-CHANNEL MOSFET FOR SWITCHING

Description The 2SK1581C, N-channel vertical type MOSFET designed for general-purpose switch, is a device which can be driven directly by a 2.5 V power source. Features Directly driven by a 2.5 V power source. Low on-state resistance RDS(on)1 = 0.57  MAX. (VGS = 4.5 V, ID = 0.3 A

N-Channel MOSFET

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N-Channel MOSFET

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