isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 50A@ TC=25℃ · Drain Source Voltage -VDSS= 60V(Min) · Static Drain-Source On-Resistance -RDS(on) = 25mΩ(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

Power MOSFET

Power MOSFET

Power MOSFET

Power MOSFET

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 6A@ TC=25℃ · Drain Source Voltage -VDSS= 250V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.84Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

LVX Series Power MOSFET

LVX Series Power MOSFET

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 6A@ TC=25℃ · Drain Source Voltage -VDSS= 250V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.84Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

LVX Series Power MOSFET

LVX Series Power MOSFET

LVX Series Power MOSFET

LVX Series Power MOSFET

LVX Series Power MOSFET

LVX Series Power MOSFET

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 10A@ TC=25℃ · Drain Source Voltage -VDSS= 250V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.5Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 10A@ TC=25℃ · Drain Source Voltage -VDSS= 250V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.5Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

2SK1394

LVX Series Power MOSFET

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 20A@ TC=25℃ · Drain Source Voltage -VDSS= 250V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.25Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 30A@ TC=25℃ · Drain Source Voltage -VDSS= 250V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.17Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 40A@ TC=25℃ · Drain Source Voltage -VDSS= 250V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.13Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

2SK1397

LVX Series Power MOSFET

MOS FIELD EFFECT TRANSISTOR

N-CHANNEL MOS FET FOR HIGH SPEED SWITCHING DESCRIPTION The 2SK1398 is N-channel MOS Field Effect Transistor designed for a high-speed switching device in digital circuits. The 2SK1398 is driven by a 2.5-V power source, it is suitable for applications including headphone stereos which need

N-CHANNEL MOS FET FOR HIGH SPEED SWITCHING

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING

DESCRIPTION The 2SK1399 is an N-channel vertical type MOS FET which can be driven by 2.5-V power supply. The 2SK1399 is driven by low voltage and does not require consideration of driving current, it is suitable for appliances including VCR cameras and headphone stereos which need power saving.

MOS FIELD EFFECT TRANSISTOR

N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING DESCRIPTION The 2SK1399 is an N-channel vertical type MOS FET can be driven by 2.5 V power supply. The 2SK1399 is driven by low voltage and does not require consideration of driving current, it is suitable for appliances includ

MOS Field Effect Transistor

Features ● Can be driven by a 3.0-V power source ● Not necessary to consider driving current because of it is high input impedance ● Possible to reduce the number of parts by omitting the bias resistor ● Complments the 2SJ185

N-Channel 60-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • Low Threshold: 2 V (typ.) • Low Input Capacitance: 25 pF • Fast Switching Speed: 25 ns • Low Input and Output Leakage • TrenchFET® Power MOSFET • 1200V ESD Protection • Compliant to RoHS Directive 2002/95/EC BENEFITS • Low

iscN-Channel MOSFET Transistor

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Power MOSFET

LVX Series Power MOSFET

iscN-Channel MOSFET Transistor

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iscN-Channel MOSFET Transistor

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LVX Series Power MOSFET

iscN-Channel MOSFET Transistor

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iscN-Channel MOSFET Transistor

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iscN-Channel MOSFET Transistor

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iscN-Channel MOSFET Transistor

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iscN-Channel MOSFET Transistor

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N-Channel MOSFET

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N-Channel MOSFET

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